Chapter 6:
Field-Effect Transistors
MOSFETs
MOSFETs have characteristics similar to JFETs and
additional characteristics that make then very useful.
There are two types of MOSFETs:
• Depletion-Type
• Enhancement-Type
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Depletion-Type MOSFET Construction
The Drain (D) and Source (S)
connect to the to n-doped regions.
These n-doped regions are
connected via an n-channel.
This n-channel is connected to
the Gate (G) via a thin insulating
layer of SiO2.
The n-doped material lies on a
p-doped substrate that may have
an additional terminal connection
called Substrate (SS).
n-Channel depletion-type MOSFET.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Depletion-Type MOSFET Construction
Enhancement Mode MOSFET
The Insulated Gate FET (IGFET).
The Metal Oxide Silicon FET
(MOSFET) or Metal Oxide Silicon
Transistor (M.O.S.T.) has an even
higher input resistance (typically
1012 to 1015 ohms) than that of the
JFET. In the MOSFET device the gate
is completely insulated from the rest of
the transistor by a very thin layer of
metal oxide (Silicon dioxide SiO2).
Hence the general name applied to
any device of this type, is the IGFET or
Insulated Gate FET
n-Channel depletion-type MOSFET.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Depletion-Type MOSFET :Basic Operation and Characteristics
VGS=0 and VDS is applied across
the drain to source terminals.
This results to attraction of free
electrons of the n-channel to the
drain, and hence current flows.
n-Channel depletion-type MOSFET with
VGS = 0 V and applied voltage VDD.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Depletion-Type MOSFET :Basic Operation and Characteristics
VGS is set at a negative voltage
such as -1 V.
The negative potential at the gate
pressures electrons toward the p-type
substrate and attract holes from the p-
type substrate.
This will reduce the number of free
electrons in the n-channel available
for conduction.
The more negative the VGS, the
resulting level of drain current ID is
reduced.
When VGS is reduced to VP (Pinch-
off voltage), then ID=0 mA.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Depletion-Type MOSFET :Basic Operation and Characteristics
When VGS is reduced to VP (Pinch-off ) [i.e. Vp=-6V], then ID=0 mA.
For positive values of VGS, the positive gate will draw additional
electrons (free carriers) from the p-type substrate and hence ID increases.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Basic MOSFET Operation
A depletion-type MOSFET can operate in two modes:
• Depletion mode
• Enhancement mode
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
D-Type MOSFET in Depletion Mode
Depletion Mode
The characteristics are
similar to a JFET.
• When VGS = 0 V, ID = IDSS
• When VGS < 0 V, ID < IDSS
• The formula used to plot the
transfer curve still applies:
2
VGS
I D I DSS 1
VP
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
D-Type MOSFET in Enhancement Mode
Enhancement Mode
• VGS > 0 V
• ID increases above IDSS
• The formula used to plot
the transfer curve still
applies:
2
VGS
I D I DSS 1
VP
Note that VGS is now a positive polarity
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
p-Channel D-Type MOSFET
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
D-Type MOSFET Symbols
(a) n-channel depletion-type MOSFETs ,(b) p-channel depletion-type MOSFETs
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Enhancement-Type MOSFET Construction
• The Drain (D) and Source (S) connect
to the to n-doped regions.
• The Gate (G) connects to the p-doped
substrate via a thin insulating layer of
SiO2
• There is no channel
• The n-doped material lies on a p-
doped substrate that may have an
additional terminal connection called
the Substrate (SS)
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Enhancement-Type MOSFET Construction
• For VGS=0, ID=0 (no channel).
• For VDS some positive voltage, and
VGS=0, two reverse biased p-n junctions
and no significant flow between drain
and source.
• For VGS>0 and VDS>0, the positive
voltage at gate pressure holes to enter
deeper regions of the p-substrate, and
the electrons in p-substrate will be
attracted to the positive gate.
• The level of VGS that results in the
significant increase in drain current is
called threshold voltage (VT).
• For VGS<VT, ID=0 mA.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Dr. Talal Skaik 2014 Upper Saddle River, New Jersey 07458 • All rights reserved.
Basic Operation of the E-Type MOSFET
The enhancement-type MOSFET operates only in the enhancement mode.
• VGS is always positive.
• As VGS increases,ID
increases
• As VGS is kept constant
and VDS is increased,
then ID saturates (IDSS)
and the saturation
level, VDSsat is reached
VDSsat can be calculated by:
VDsat VGS VT
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
E-Type MOSFET Transfer Curve
To determine ID givenVGS: I D k(VGS VT ) 2
Where: VT = threshold voltage or voltage at which the MOSFET turns on
k, a constant, can be determined by using values at a specific point and the formula:
I D(ON)
k
(VGS(ON) V T ) 2
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
E-Type MOSFET Transfer Curve
I D(ON)
I D k(VGS VT )2 k
(VGS(ON) V T ) 2
Substituting ID(on) =10 mA when VGS(on)=8V from the characteristics:
k
10 mA
0.27810 3
A/V 2
I =0.278 10 3
V GS 2V 2
(8 2) 2
D
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
p-Channel E-Type MOSFETs
The p-channel enhancement-type MOSFET is similar to the n-channel,
except that the voltage polarities and current directions are reversed.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
MOSFET Symbols
Symbols for (a) n-channel enhancement-type MOSFETs and
(b) p-channel enhancement-type MOSFETs.
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Ch.6 Summary
VMOS Devices
VMOS (vertical MOSFET) is a component structure that
provides greater
surface area.
Advantages
VMOS devices handle
higher currents by
providing more surface
area to dissipate the heat.
VMOS devices also have
faster switching times.
Ch.6 Summary
CMOS Devices
CMOS (complementary MOSFET) uses a p-channel and
n-channel MOSFET; often on the same substrate as
shown here.
Advantages
• Useful in logic circuit designs
• Higher input impedance
• Faster switching speeds
• Lower operating power levels
Ch.6 Summary
Summary Table
