AON6716

30V N-Channel MOSFET

SRFET TM

General Description Product Summary

SRFETTM AON6716 uses advanced trench technology VDS 30V

with a monolithically integrated Schottky diode to provide ID (at VGS=10V) 85A
excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) < 2.8mΩ
suitable for use as a low side FET in SMPS, load RDS(ON) (at VGS = 4.5V) < 4.2mΩ
switching and general purpose applications.

100% UIS Tested

100% Rg Tested

DFN5X6 D
Top View Bottom View Top View

SRFETTM
1 8 Soft Recovery MOSFET:
2 7 Integrated Schottky Diode
3 6

4 5 G
PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 67 A
C
Pulsed Drain Current IDM 310
Continuous Drain TA=25°C 23
IDSM A
Current TA=70°C 18
Avalanche Current C IAR 59 A
Repetitive avalanche energy L=0.1mH C EAR 174 mJ
TC=25°C 83
B
PD W
Power Dissipation TC=100°C 33
TA=25°C 2.3
PDSM W
Power Dissipation A TA=70°C 1.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

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 AON6716

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 0.1
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 20
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.7 2.2 V
ID(ON) On state drain current VGS=10V, VDS=5V 310 A
VGS=10V, ID=20A 2.3 2.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.4 4.1
VGS=4.5V, ID=20A 3.3 4.2 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 120 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 0.7 V
IS Maximum Body-Diode Continuous Current 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3300 4100 4900 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 560 800 1050 pF
Crss Reverse Transfer Capacitance 240 400 560 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.2 0.4 0.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 58 72 86 nC
Qg(4.5V) Total Gate Charge 29 36 43 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 14 17 20 nC
Qgd Gate Drain Charge 7 12 17 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 5.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 40 ns
tf Turn-Off Fall Time 10 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 15 18 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 25 31 37 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON6716

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150
4V 150
VDS=5V
4.5V
120
5V 120

10V
90 3.5V
90
ID (A)

ID(A)
60 60
125°C
30 30
VGS=3V
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

6 1.8

Normalized On-Resistance
5 VGS=10V
1.6
ID=20A
4
RDS(ON) (mΩ )

VGS=4.5V 1.4
17
3
5
1.2 2
2
VGS=10V VGS=4.5V 10
1 ID=20A
1

0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
18
Voltage (Note E)
(Note E)

8 1.0E+02
ID=20A
7
40
1.0E+01
6
125°C
RDS(ON) (mΩ )

5
IS (A)

125°C 1.0E+00
25°C
4

3
1.0E-01
2 25°C

1 1.0E-02
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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 AON6716

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 6000
VDS=15V
ID=20A 5000
8
Ciss

Capacitance (pF)
4000
VGS (Volts)

3000
4
2000
Coss
2
1000

0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 800

700
100.0 RDS(ON) 10µs 10µs TJ(Max)=150°C
limited 600
TC=25°C
100µs 500
Power (W)
ID (Amps)

10.0
1ms
17
DC 400 5
1.0
300
2
10
TJ(Max)=150°C 200
0.1
TC=25°C
100
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=1.5°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6716

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

160 100
IAR (A) Peak Avalanche Current

140 TA=25°C
80

Power Dissipation (W)

120
TA=100°C
100 60
TA=125°C
80

60 40

40 TA=150°C
20
20

0 0
0.000001 0.00001 0.0001 0.001 100% UIS
0 Tested
25 50 75 100 125 150
Time in avalanche, tA (s) 100% Rg Tested TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

100 10000

TA=25°C
80 1000
Current rating ID(A)

Power (W)

60 17
100 5
2
40
10
10
20

1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=55°C/W 40

0.1

PD
0.01

Single Pulse Ton

T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6716

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 0.8

0.7
1.0E-02 20A

VDS=30V 0.6
1.0E-03

VSD (V)
IR (A)

0.5
10A
1.0E-04
0.4 5A
VDS=15V
1.0E-05 IS=1A
0.3

100%
0.2 UIS Tested
1.0E-06
0 50 100 150 200 100% 0Rg Tested50 100 150 200
Temperature (°C) Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs. Figure 18: Diode Forward voltage vs. Junction
Junction Temperature Temperature

50 12 16 3
di/dt=800A/µs
di/dt=800A/µs 125ºC 125ºC
40 10 14 2.5
trr
Qrr 12 2
25ºC 25ºC
30 8
Qrr (nC)

Irm (A)

trr (ns)

10 1.5

S
20 125ºC 6
8 25ºC 1
Irm S
10 4
25ºC 6 125ºC 0.5

0 2 4 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak Figure 19: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

45 10 20 2.2
40 Is=20A 18 Is=20A
35 125ºC 8 25ºC
16 1.7
trr
30 25ºC 125ºC
6 14
Qrr (nC)

Irm (A)

trr (ns)

25
12 1.2
S

20 25ºC
125ºC 4
Qrr 10
15
25ºC 8 S 0.7
10 2 125º
5 Irm 6
0 0 4 0.2
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 20: Diode Reverse Recovery Charge and Figure 21: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt

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 AON6716

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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