ACTIVITY NO.
2
Computer Architecture
ICS 222(LAB)
2:30-4:00 MTh
Submitted by:
Blanco, Jose Mari
Garcia, Kevin
Gragasin, Mark Jr.
Manangan, Jeremy
BSCS 2
I. MEMORY UNIT
A. RAM
Semiconductor memories where all read and write functions are performed.
It is a volatile memory which needs constant supply of power to store data. All data
will be lost when power is turned off.
Random Access Memory: Can access any memory cell directly
An IC made of millions of transistors and capacitors
TYPES OF RAM
SRAM: Static RAM
Uses multiple transistors, typically four to six, for each memory cell (a bit)
Used primarily for cache, registers in main storage units and processors
Created with a circuit called ‘flip-flop’ which preserves status of data inside the circuit.
Data is not lost therefore refresh is unnecessary resulting in higher processing speed.
Cost is high because the circuits are complicated and memory capacity is smaller than
DRAM
DRAM: Dynamic RAM
Cost low because circuit is simple and small
A transistor and a capacitor are paired to create a memory cell (a bit)
The capacitor holds the bit of information and acts as a switch for read and write
Needs constant charge to store data
The problem with the capacitor is that its value leaks with time
Memory is refreshed at regular intervals which affects performance speed
Refresh operation happens automatically 1000s of times/sec – as such, it is ‘dynamic’
Used in storage units of computers, printers and other devices
SDRAM: Synchronous DRAM
High speed DRAM
Developed to keep up with the operating speed of processors
Takes advantage of the burst mode concept by staying on the row containing the
requested bit and moving rapidly through the columns, reading each bit as it goes
The idea is that most of the time the data needed by the CPU will be in sequence
SDRAM is about five percent faster than EDO RAM
Maximum transfer rate to L2 cache ≈ 528MBps
RDRAM: Rambus DRAM
A radical departure from the previous DRAM architecture
Uses a Rambus in-line memory module (RIMM)
Use of a special high-speed data bus called the Rambus channel
RDRAM memory chips work in parallel to achieve
a data rate of 800 MHz
VRAM: Video RAM
Also known as Multiport dynamic random access memory (MPDRAM)
Used specifically for video adapters or 3-D accelerators
Other Types of RAM
FPM DRAM: Fast page mode DRAM
It waits for the first bit of data to be located and read before it looks for the next bit
Maximum transfer rate to L2 cache ≈ 176MBps
EDO RAM: Extended data-out DRAM
As soon as the address of the first bit is located, it begins looking for the next bit
It is about five percent faster than FPM DRAM
Maximum transfer rate to L2 cache ≈ 264MBps
B. ROM
Read-only memory, also known as firmware
Instructions are written in ROM by the firm or manufacturer of the chip.
Data stored in such chip is non-volatile
Data stored in these chips is either unchangeable or requires a special operation to
change
TYPES OF ROM
ROM
Also known as ‘mask’ ROM
Firmware – a program used to start a computer, etc
User cannot add any programs or data
Used in memories of games, software etc.
PROM
Has a grid of columns and rows just as ordinary ROM
Every intersection of a column and row has a fuse connecting them
The higher voltage breaks the connection between the column and row by burning out the
fuse
Programmable read-only memory can only be programmed once
Inexpensive
Great for prototyping the data for a ROM before committing to the costly ROM fabrication
process
EPROM
Erasable programmable read-only memory
Can be rewritten many times
Similar to PROM, except that the intersection can be charged to create barrier for signal
transmission
Incremental changes cannot be done
Ultraviolet light is used to erase the chip
EEPROM
Electrically erasable programmable read-only memory
Incremental changes can be done
Electric field is used to alter the data
Slow as only one byte can be changed each time
Flash Memory
Similar to EEPROM
Uses in-circuit wiring to erase by applying an electrical field to the entire chip or to
predetermined sections of the chip called blocks
Chunk of 512 bytes data can be altered each time
II. PC WIZARD RESULTS
General Information :
DIMM 1 (RAS 1, RAS 0) : 512 (Double Bank)
DIMM 2 : Empty
Information SPD EEPROM (DIMM 1) :
Manufacturer : Kingston
Part Number :K
Serial Number : 702AD7ED
Type : DDR-SDRAM PC-3200 (200MHz) - [DDR-400]
Size : 512MB (2 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability (EC... No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 µs, Self Refreshµs
Voltage : SSTL 2.5vv
Prefetch Buffer : 2-bit
Supported Frequencies : 133MHz, 166MHz, 200MHz
CAS Latency (tCL) : 2 clocks @ 133MHz, 2.5 clocks @ 166MHz, 3 clocks @ 200MHz
RAS to CAS (tRCD) : 2 clocks @ 133MHz, 3 clocks @ 166MHz, 3 clocks @ 200MHz
RAS Precharge (tRP) : 2 clocks @ 133MHz, 3 clocks @ 166MHz, 3 clocks @ 200MHz
Cycle Time (tRAS) : 6 clocks @ 133MHz, 7 clocks @ 166MHz, 8 clocks @ 200MHz
Memory Controller Information :
Memory Controller : SIMM, DIMM, SDRAM
Number of connectors : 2
Max. Module Size : 1024MB
Max. Memory Size : 2048MB
Supported Speed : 70ns, 60ns, 50ns
Supported Voltages : 2.9v
Error Detection Method : No
Error Correction Capability : None
Current/Supported Interleave : 1-way/1-way
