Scribd
Upload
233 views1 page

C3198 NPN Silicon Transistor Specs

This document provides specifications for an NPN epitaxial silicon transistor in a TO-92 package. Key specifications include a collector-emitter voltage rating of 50V, collector current rating of 150mA, and collector dissipation rating of 625mW. It lists absolute maximum ratings and electrical characteristics including current gain, breakdown voltages, cut-off currents, and transition frequency. Current gain is classified into groups ranging from 70-140 to 350-700.

Uploaded by

shahbaz ahmad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
233 views1 page

C3198 NPN Silicon Transistor Specs

This document provides specifications for an NPN epitaxial silicon transistor in a TO-92 package. Key specifications include a collector-emitter voltage rating of 50V, collector current rating of 150mA, and collector dissipation rating of 625mW. It lists absolute maximum ratings and electrical characteristics including current gain, breakdown voltages, cut-off currents, and transition frequency. Current gain is classified into groups ranging from 70-140 to 350-700.

Uploaded by

shahbaz ahmad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

C3198

NPN Epitaxial Silicon Transistor

TO-92

Features
Collector-Emitter Voltage: VCEO=50V
Collector Dissipation: PC(max)=625mW

Absolute Maximum Ratings (TA=25oC)


Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Collector Dissipation PC 625 mW
o 1. Emitter 2. Collector 3. Base
Junction Temperature TJ 150 C
o
Storage Temperature TSTG -55~+150 C

Electrical Characteristics (TA=25oC)


Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC= 100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC= 1mA, IB=0 50 V
Emitter-Base Breakdown Voltage BVEBO IE= 100µA, IC=0 5 V
Collector Cut-off Current ICBO VCB= 60V, IE=0 .01 µA
Emitter Cut-off Current IEBO VEB= 5V, IC=0 0.1 µA
DC Current Gain hFE(1) VCE= 6V, IC= 2mA 70 700
hFE(2) VCE= 6V, IC= 150mA 25 100
Collector-Emitter Saturation Voltage VCE(sat) IC= 100mA, IB= 10mA 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC= 100mA, IB= 10mA 1 V
Transition Frequency fT VCE= 10V, IC= 1mA
F=30MHz 80 MHz

hFE CLASSIFICATION
Classification O Y GR BL
hFE 70-140 120-240 200-400 350-700

Elite Enterprises (H.K.) Co., Ltd. Part No.: C3198


Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Page: 1 / 1

You might also like