SCAPS 3.
0
An introduction
Koen Decock & Marc Burgelman
Overview
SCAPS 3.0
• Getting started
• General working principles
• Tips & Tricks
– Numerical limitations
– The numerical panel
– A neutral defect
– Curve Info: Get informed!
– Preserve your work for the future: saving and commenting.
– Speeding up: Batch – Recorder – Script
– Grading
– Zooming: Get a closer look!
– The blue button
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Getting Started…
SCAPS 3.0
• Opto-electrical simulation
of 1-D structure of
semiconductor layers
• Special attention for
contacts and interfaces
Light
• Variable bias voltage,
temperature & illumination
• DC & AC calculations
• Designed for CdTe and
V
CIGS Solar Cells, but also
used in other material systems ☺
J(V)
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1. Define Problem
2. Working Point
SCAPS 3.0
3. Select Calculations
4. Start Calculations
5. Analyze results
Getting Started
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Getting Started: Define Problem
SCAPS 3.0
• Setting Layer,
Interface &
Contact
properties
• Setting
Numerical
preferences
• Saving &
Loading
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SCAPS 3.0
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Getting Started: Analyze results
SCAPS 3.0
• Display
results
• Export
results
• Compare
with
measured
data
• Navigate
to other
panels
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General working principles:
Semiconductor equations
SCAPS 3.0
∂ ∂ψ q − + 1
ε = − −n + p − N A + N D + ρ defect (n, p ) Poisson Constitutive relations
∂x ∂x ε0 q
∂jn ∂n µn ∂EFn
− + G − U n ( n, p ) = j
n = − n
∂x
∂x ∂t q
Continuity relations
∂j p ∂p j = µ p p ∂EFp
− + G − U p ( n, p ) =
p
∂ x ∂t q ∂x
• Boundary conditions at interfaces and contacts
• RESULT: system of coupled differential
equations in {ψ, n, p} or {ψ, EFn, EFp}
• Solved numerically
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General working principles:
Discretization
SCAPS 3.0
• Equations solved using finite
differences
• Structure discretized => MESH
– Coarse meshing in the middle of a
layer 300
250
– Finer mesh near the interfaces &
meshpoint #
200
contacts
150
– Two discretization points for each 100
interface 50
– Meshing can be updated during 0
0 2 4 6 8 10
simulation process (numerical panel) x(µm)
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General working principles:
The pathway to a solution1
SCAPS 3.0
¿Gummel scheme with Newton Raphson substeps?
• Solve (1) for ψ with given EFn & EFp
• Solve (2) for EFn with given ψ & EFp
• Solve (3) for EFp with given ψ & EFn
∂ ∂ψ q − +
(1) : ∂x ε ∂x = − ε −n + p − N A + N D + ρ defect (n, p )
0
∂jn ∂n
(2) : − + G − U n (n, p) =
∂x ∂t
∂j p ∂p
• Make first guess of solution
(3) : − + G − U p (n, p ) =
∂x ∂t • Improve guess with tangent lines
• Works well if first guess was
not too bad
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General working principles:
The pathway to a solution2
SCAPS 3.0
Startpoint
Equilibrium Situation (dark; 0V) • Difference between
LIGHT several steps should not
be too large
DARK
Short circuit (light; 0V) • Number of intermediate
steps to get to the
workingpoint can be set
Workingpoint Situation • Every batch step starts
at the startpoint
1st Calculation point
closest to workingpoint
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General working principles:
AC-analysis
SCAPS 3.0
• Small signal analysis: Vɶ → 0
• Small signal values are complex numbers!!!
• Small signal currents, potential (ψ) and Fermi levels displayed on
ac-panel
• Admittance interpreted as capacitance-conductance circuit
ɶ jωt
R(ω)=1/G(ω)
V = VDC + Ve
jωt
ψ = ψ DC +ψɶ e
ɶ jωt
EFn = EFn, DC + EFn e
jωt
jn = jn , DC + ɶjn e
C(ω)
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SCAPS 3.0
Tips and Tricks
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Numerical limitations
Large number of points:
SCAPS 3.0
Slower calculation
Less chance of convergence failure
• Keep the variation
between different
calculation steps
limited.
• Keep it realistic:
SCAPS is developed and tested to
simulate realistic situations, hence
things can go wrong when simulating
unphysical situations
• Don’t overdo
Do you really want to know the current
at T=20K, V=300V?
• Stop after Voc
Don’t calculate the strong forward
currents (slow to calculate) if you don’t
need them.
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Numerical limitations
SCAPS 3.0
1.000 − 10−15 ≠ 1.000
AC-calculation when Re(J) » Im(J)
• negative capacitances
• C increases with frequency pn ↔ np-structure
V(V)
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The numerical panel1
SCAPS 3.0 Avoid too big variations
between iterations
Terminations criteria
Newton-Raphson
ψ
EFn
EFp
Error handling
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The numerical panel2
SCAPS 3.0
Remove/add mesh points:
based on:
• ψ, EFn and EFp
• Generation
• Recombination
No recalculation Recalculation
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A Neutral Defect
SCAPS 3.0
• Recombination present ↔ No influence on
charges
– Separation of direct and charge related effects of defects
• Does not exist in real materials
• Handy in simulation
– Whilst building model
– For unimportant layers
• Neutral defect + shallow doping ~ charged
defect
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Curve Info
SCAPS 3.0
• Information about Graph/Curve/Point when clicking on a plot:
• Point/Curve nearest to mouse-click selected.
• ¿Which curve corresponds to which simulation?
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Save your work and settings
SCAPS 3.0
• Save settings:
– Cell structure (.def)
[some of the numerical settings are included here]
– Batch (.sbf & .bdf) All together (.scaps)
– Recorder (.srf)
– Action panel (.act)
• Save results:
• To figure format (.png/.jpg/.bmp)
• To text file (or .xls-file)
• To screen
All files can be read with a text editor
• To printer (or pdf-printer)
• ADDING COMMENT STRONGLY RECOMMENDED! 20/29
Speeding up:
Batch
SCAPS 3.0
Parameters varied • Linear variation
simultaneously • Logarithmic variation
Vary entire definition files
• Custom defined variation
Set custom values
file as parameter!
Up to 9 parameters
Keep SHIFT pressed to interrupt
a batch calculation
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Speeding up:
Recorder1
SCAPS 3.0
1. Select item to be recorded
2. Press to add to the list
List of items to be recorded
• The recorder overrules all calculations set at the action panel
• Items recorded at workingpoint conditions
• Only simulations to get to the asked properties are performed
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Speeding up:
Recorder2
SCAPS 3.0
Recorded items shown as function of:
• Batch parameters (cell characteristics – general properties – interface properties)
• Mesh (other properties)
• Only checked
items are
saved
• Only lowest
checked item
is shown
Choose properties on the axes
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Speeding up:
Script
SCAPS 3.0
• Run SCAPS from command-line or external program
• Automatize user-interface operations
• Analyze results in a non standard way
– Make your own extension to SCAPS: SCAPSUserFunction.dll
– Root/extrema finding available
– Access all recordable variables: singleshotbatch
• Keep the script manual close at hand
• Freedom has its price! While scripting you have
more power to let things go wrong 24/29
Grading
SCAPS 3.0
• Material driven approach
• NA, ND, NT Grading along composition or position
• What is UNIFORM?
– Uniform A / Uniform B: Only one material present (nothing else
can/should be graded)
– Uniform Y: Uniform material is a mixture of two materials (other
parameters can be graded)
• Special absorption interpolation
Graded variables available on
the cell definition panel after
calculation
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Zooming and Scaling
SCAPS 3.0
• Set scaling on the
scaling panel
• Switch between
Linear &
Logarithmic
• Press CTRL and draw a rectangle in a graph to zoom in
• Press CTRL and right mouse button to zoom out.
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The blue button
SCAPS 3.0
• Allows browsing of the cell definition
• Makes sure you find minimized panels back
• Uneditable panels are dimmed
Blue button Panel
EMERGENCY BUTTONS
• Press F1 to get to cell
definition panel (where you can
Only items in red can access the blue button)
be edited immediately
• Press F2 to see the layer/interface
panel
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Enjoy SCAPS
SCAPS 3.0
• SCAPS is freeware:
– Register when using: [email protected]
[email protected]
– Cite when publishing:
• M. Burgelman et al., Thin Solid Films, 361-362, 527-532 (2000)
• Other more specialized articles
• More Details:
– Collection of (Add-on) user manuals
– Contributions in literature
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SCAPS 3.0
More Questions?
• Raise your hand and ask!
• [email protected]
[email protected]
Please explain your problem, what you did and what you
expected!
Please add .def- or .scaps- file with sufficient comments &
results.
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