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SCAPS 3.0: Semiconductor Simulation Guide

This document provides an overview of the SCAPS 3.0 simulation software. It discusses getting started with SCAPS by defining the semiconductor layers and optical/electrical properties. The general working principles are then summarized, including how the software solves the coupled semiconductor equations numerically on a discretized mesh. Tips and tricks are provided related to numerical limitations, manipulating the mesh, and using the numerical panel options.
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0% found this document useful (0 votes)
384 views29 pages

SCAPS 3.0: Semiconductor Simulation Guide

This document provides an overview of the SCAPS 3.0 simulation software. It discusses getting started with SCAPS by defining the semiconductor layers and optical/electrical properties. The general working principles are then summarized, including how the software solves the coupled semiconductor equations numerically on a discretized mesh. Tips and tricks are provided related to numerical limitations, manipulating the mesh, and using the numerical panel options.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SCAPS 3.

0
An introduction

Koen Decock & Marc Burgelman


Overview
SCAPS 3.0

• Getting started
• General working principles
• Tips & Tricks
– Numerical limitations
– The numerical panel
– A neutral defect
– Curve Info: Get informed!
– Preserve your work for the future: saving and commenting.
– Speeding up: Batch – Recorder – Script
– Grading
– Zooming: Get a closer look!
– The blue button
2/29
Getting Started…
SCAPS 3.0
• Opto-electrical simulation
of 1-D structure of
semiconductor layers
• Special attention for
contacts and interfaces
Light
• Variable bias voltage,
temperature & illumination
• DC & AC calculations
• Designed for CdTe and
V
CIGS Solar Cells, but also
used in other material systems ☺
J(V)

3/29
1. Define Problem
2. Working Point
SCAPS 3.0
3. Select Calculations
4. Start Calculations
5. Analyze results
Getting Started

4/29
Getting Started: Define Problem
SCAPS 3.0

• Setting Layer,
Interface &
Contact
properties
• Setting
Numerical
preferences
• Saving &
Loading

5/29
SCAPS 3.0

6/29
Getting Started: Analyze results
SCAPS 3.0

• Display
results
• Export
results
• Compare
with
measured
data
• Navigate
to other
panels

7/29
General working principles:

Semiconductor equations
SCAPS 3.0

 ∂  ∂ψ  q  − + 1 
 ε  = −  −n + p − N A + N D + ρ defect (n, p )  Poisson Constitutive relations
 ∂x  ∂x  ε0  q 
 ∂jn ∂n  µn ∂EFn
− + G − U n ( n, p ) = j
 n = − n
∂x
 ∂x ∂t  q
Continuity relations 
 ∂j p ∂p  j = µ p p ∂EFp
− + G − U p ( n, p ) =
 p
 ∂ x ∂t q ∂x

• Boundary conditions at interfaces and contacts


• RESULT: system of coupled differential
equations in {ψ, n, p} or {ψ, EFn, EFp}
• Solved numerically

8/29
General working principles:

Discretization
SCAPS 3.0

• Equations solved using finite


differences
• Structure discretized => MESH
– Coarse meshing in the middle of a
layer 300

250
– Finer mesh near the interfaces &

meshpoint #
200
contacts
150

– Two discretization points for each 100

interface 50

– Meshing can be updated during 0


0 2 4 6 8 10
simulation process (numerical panel) x(µm)

9/29
General working principles:

The pathway to a solution1


SCAPS 3.0

¿Gummel scheme with Newton Raphson substeps?

• Solve (1) for ψ with given EFn & EFp


• Solve (2) for EFn with given ψ & EFp
• Solve (3) for EFp with given ψ & EFn

 ∂  ∂ψ  q − +
(1) : ∂x  ε ∂x  = − ε  −n + p − N A + N D + ρ defect (n, p ) 
   0
 ∂jn ∂n
(2) : − + G − U n (n, p) =
 ∂x ∂t
 ∂j p ∂p
• Make first guess of solution
(3) : − + G − U p (n, p ) =
 ∂x ∂t • Improve guess with tangent lines
• Works well if first guess was
not too bad
10/29
General working principles:

The pathway to a solution2


SCAPS 3.0
Startpoint

Equilibrium Situation (dark; 0V) • Difference between


LIGHT several steps should not
be too large
DARK
Short circuit (light; 0V) • Number of intermediate
steps to get to the
workingpoint can be set
Workingpoint Situation • Every batch step starts
at the startpoint
1st Calculation point
closest to workingpoint

… 11/29
General working principles:

AC-analysis
SCAPS 3.0

• Small signal analysis: Vɶ → 0


• Small signal values are complex numbers!!!
• Small signal currents, potential (ψ) and Fermi levels displayed on
ac-panel
• Admittance interpreted as capacitance-conductance circuit

ɶ jωt
R(ω)=1/G(ω)
V = VDC + Ve
 jωt
ψ = ψ DC +ψɶ e
 ɶ jωt
 EFn = EFn, DC + EFn e
 jωt
 jn = jn , DC + ɶjn e
C(ω)
12/29
SCAPS 3.0

Tips and Tricks

13/29
Numerical limitations
Large number of points:
SCAPS 3.0
Slower calculation
 Less chance of convergence failure
• Keep the variation
between different
calculation steps
limited.
• Keep it realistic:
SCAPS is developed and tested to
simulate realistic situations, hence
things can go wrong when simulating
unphysical situations

• Don’t overdo
Do you really want to know the current
at T=20K, V=300V?

• Stop after Voc


Don’t calculate the strong forward
currents (slow to calculate) if you don’t
need them.
14/29
Numerical limitations
SCAPS 3.0
1.000 − 10−15 ≠ 1.000
AC-calculation when Re(J) » Im(J)
• negative capacitances
• C increases with frequency pn ↔ np-structure

V(V)

15/29
The numerical panel1
SCAPS 3.0 Avoid too big variations
between iterations

Terminations criteria
Newton-Raphson

ψ
EFn
EFp
Error handling

16/29
The numerical panel2
SCAPS 3.0

Remove/add mesh points:


based on:
• ψ, EFn and EFp
• Generation
• Recombination

No recalculation Recalculation

17/29
A Neutral Defect
SCAPS 3.0

• Recombination present ↔ No influence on


charges
– Separation of direct and charge related effects of defects
• Does not exist in real materials
• Handy in simulation
– Whilst building model
– For unimportant layers
• Neutral defect + shallow doping ~ charged
defect

18/29
Curve Info
SCAPS 3.0

• Information about Graph/Curve/Point when clicking on a plot:


• Point/Curve nearest to mouse-click selected.
• ¿Which curve corresponds to which simulation?
19/29
Save your work and settings
SCAPS 3.0

• Save settings:
– Cell structure (.def)
[some of the numerical settings are included here]
– Batch (.sbf & .bdf) All together (.scaps)
– Recorder (.srf)
– Action panel (.act)
• Save results:

• To figure format (.png/.jpg/.bmp)


• To text file (or .xls-file)
• To screen
All files can be read with a text editor
• To printer (or pdf-printer)

• ADDING COMMENT STRONGLY RECOMMENDED! 20/29


Speeding up:

Batch
SCAPS 3.0

Parameters varied • Linear variation


simultaneously • Logarithmic variation
Vary entire definition files
• Custom defined variation

Set custom values

file as parameter!

Up to 9 parameters
Keep SHIFT pressed to interrupt
a batch calculation
21/29
Speeding up:

Recorder1
SCAPS 3.0

1. Select item to be recorded

2. Press to add to the list

List of items to be recorded

• The recorder overrules all calculations set at the action panel


• Items recorded at workingpoint conditions
• Only simulations to get to the asked properties are performed
22/29
Speeding up:

Recorder2
SCAPS 3.0
Recorded items shown as function of:
• Batch parameters (cell characteristics – general properties – interface properties)
• Mesh (other properties)
• Only checked
items are
saved
• Only lowest
checked item
is shown

Choose properties on the axes


23/29
Speeding up:

Script
SCAPS 3.0

• Run SCAPS from command-line or external program


• Automatize user-interface operations
• Analyze results in a non standard way
– Make your own extension to SCAPS: SCAPSUserFunction.dll
– Root/extrema finding available
– Access all recordable variables: singleshotbatch

• Keep the script manual close at hand


• Freedom has its price! While scripting you have
more power to let things go wrong 24/29
Grading
SCAPS 3.0

• Material driven approach


• NA, ND, NT  Grading along composition or position
• What is UNIFORM?
– Uniform A / Uniform B: Only one material present (nothing else
can/should be graded)
– Uniform Y: Uniform material is a mixture of two materials (other
parameters can be graded)
• Special absorption interpolation

Graded variables available on


the cell definition panel after
calculation

25/29
Zooming and Scaling
SCAPS 3.0

• Set scaling on the


scaling panel
• Switch between
Linear &
Logarithmic

• Press CTRL and draw a rectangle in a graph to zoom in


• Press CTRL and right mouse button to zoom out.
26/29
The blue button
SCAPS 3.0
• Allows browsing of the cell definition
• Makes sure you find minimized panels back
• Uneditable panels are dimmed

Blue button Panel

EMERGENCY BUTTONS

• Press F1 to get to cell


definition panel (where you can
Only items in red can access the blue button)
be edited immediately
• Press F2 to see the layer/interface
panel

27/29
Enjoy SCAPS
SCAPS 3.0

• SCAPS is freeware:
– Register when using:  [email protected]
[email protected]
– Cite when publishing:
• M. Burgelman et al., Thin Solid Films, 361-362, 527-532 (2000)
• Other more specialized articles
• More Details:
– Collection of (Add-on) user manuals
– Contributions in literature

28/29
SCAPS 3.0

More Questions?
• Raise your hand and ask!
•  [email protected]
[email protected]
 Please explain your problem, what you did and what you
expected!
Please add .def- or .scaps- file with sufficient comments &
results.

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