DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

BC517
NPN Darlington transistor
Product specification 2004 Nov 05
Supersedes data of 2003 Oct 16
Philips Semiconductors Product specification

NPN Darlington transistor BC517

FEATURES PINNING
• High current (max. 500 mA) PIN DESCRIPTION
• Low voltage (max. 30 V) 1 emitter
• Very high DC current gain (min. 30000). 2 base
3 collector
APPLICATIONS
• Where very high amplification is required.
handbook, halfpage 2 3

DESCRIPTION 1
TR1
2
NPN Darlington transistor in a TO-92; SOT54 plastic 3
TR2
package. PNP complement: BC516.
1
MAM302

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

ORDERING INFORMATION

PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
BC517 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 40 V
VCES collector-emitter voltage VBE = 0 V − 30 V
VEBO emitter-base voltage open collector − 10 V
IC collector current (DC) − 500 mA
ICM peak collector current − 800 mA
IB base current (DC) − 100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 625 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.

2004 Nov 05 2
Philips Semiconductors Product specification

NPN Darlington transistor BC517

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 200 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 30 V; IE = 0 A − − 100 nA
IEBO emitter-base cut-off current VEB = 10 V; IC = 0 A − − 100 nA
hFE DC current gain VCE = 2 V; IC = 20 mA; see Fig.2 30000 − −
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1 V
VBEsat base-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1.5 V
VBEon base-emitter on-state voltage VCE = 5 V; IC = 10 mA − − 1.4 V
fT transition frequency VCE = 5 V; IC = 30 mA; − 220 − MHz
f = 100 MHz

MGD837
80000
handbook, full pagewidth

hFE

60000

40000

20000

0
10−1 1 10 102 103
IC (mA)

VCE = 2 V.

Fig.2 DC current gain; typical values.

2004 Nov 05 3
Philips Semiconductors Product specification

NPN Darlington transistor BC517

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

d A L

1
e1
2
D e

b1
L1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A b b1 c D d E e e1 L L1(1)
max.
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5
mm 2.54 1.27 2.5
5.0 0.40 0.55 0.38 4.4 1.4 3.6 12.7

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

97-02-28
SOT54 TO-92 SC-43A
04-06-28

2004 Nov 05 4
Philips Semiconductors Product specification

NPN Darlington transistor BC517

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information  Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no license or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Nov 05 5
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2004 SCA76

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/06/pp6 Date of release: 2004 Nov 05 Document order number: 9397 750 13567