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MOSFET SPICE Model and Inverter Design

This document provides SPICE models for an n-channel MOSFET and a p-channel MOSFET to be used for circuit simulation. The n-channel MOSFET model includes parameters like threshold voltage, mobility, oxide thickness, and capacitances. The p-channel MOSFET model similarly defines threshold voltage and other parameters.

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Kripa nand
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194 views1 page

MOSFET SPICE Model and Inverter Design

This document provides SPICE models for an n-channel MOSFET and a p-channel MOSFET to be used for circuit simulation. The n-channel MOSFET model includes parameters like threshold voltage, mobility, oxide thickness, and capacitances. The p-channel MOSFET model similarly defines threshold voltage and other parameters.

Uploaded by

Kripa nand
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Use the following SPICE model for MOSFETs to simulate the circuits:

.model nch NMOS


+ LEVEL = 3
+ VTO = 0.70
+ UO = 660
+ TOX = 1.40E-08
+ NSUB = 3E+16
+ XJ = 2.0e-7
+ LD = 1.6E-08
+ NFS = 7e+11
+ VMAX = 1.8e5
+ DELTA = 2.40
+ ETA = 0.1
+ KAPPA = 0.15
+ THETA = 0.1
+ CGDO = 2.20E-10
+ CGSO = 2.20E-10
+ CGBO = 7.00E-10
+ MJ = 0.50
+ CJSW = 3.50E-10
+ MJSW = 0.38

.model pch PMOS


+ LEVEL = 3
+ VTO = -0.70
+ UO = 210
+ TOX = 1.40E-08
+ NSUB = 6.00e16
+ XJ = 2.0e-7
+ LD = 1.5E-08
+ NFS = 6E+11
+ VMAX = 2.00e5
+ DELTA = 1.25
+ ETA = 0.1
+ KAPPA = 2.5
+ THETA = 0.1
+ CGDO = 2.20E-10
+ CGSO = 2.20E-10
+ CGBO = 7.00E-10
+ MJ = 0.50
.end

*.MODEL nch NMOS VTO=0.7 KP=110U GAMMA=0.4 LAMBDA=0.04 PHI=0.7


*.MODEL pch PMOS VTO=-0.7 KP=50U GAMMA=0.57 LAMBDA=0.05 PHI=0.8

 Design pusuedo nMOS and enhancement load inverters. Perform the calculation for VOL
and VOH. Also find logical threshold of the inverter.

 Design a superbuffer using CMOS inverters to drive a load of 100 fF, assume the input
capacitance to be 2 fF.

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