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Fabrication of Zener Diode

The document describes the fabrication process for a Zener diode. Key steps include: 1. Starting with a p-type silicon wafer and forming an epitaxial p+ layer on top. 2. Depositing silicon dioxide through oxidation and using photolithography to pattern the oxide layer. 3. Etching away exposed silicon dioxide and doping the material with an n-type impurity to form the p-n junction. 4. Further photolithography, etching, and metallization steps to create contacts and complete the Zener diode.

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100% found this document useful (1 vote)
694 views6 pages

Fabrication of Zener Diode

The document describes the fabrication process for a Zener diode. Key steps include: 1. Starting with a p-type silicon wafer and forming an epitaxial p+ layer on top. 2. Depositing silicon dioxide through oxidation and using photolithography to pattern the oxide layer. 3. Etching away exposed silicon dioxide and doping the material with an n-type impurity to form the p-n junction. 4. Further photolithography, etching, and metallization steps to create contacts and complete the Zener diode.

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sanju
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Zener Diode Fabrication

Zener Diode:
Zener diode is a form of semiconductor diode
in which at a critical reverse voltage a large reverse current can
[Link] works same as pn junction diode in forward bias but in
reverse bias at certain breakdown voltage,large current flow
but upto that zener voltage it will not allow the current to
[Link] that the materials should be heavily [Link] zener
diode the concentrations of materials are high such that the
depletion width is less and has high electric field strength result
in flowing current at lower voltages known as field ionization.

Fabrication Process:
[Link] take a p-type Si [Link] take a cross
sectional view of Si wafer,look like a simple plane rectangular
[Link] Layer:
Form epitaxial layer on top of P-SI wafer with high
concentration(p+).Forming a new layer on Si-wafer is known as
"epitaxy",the layer is epitaxial layer.

[Link]:
Deposit SiO2 layer on top of the material through
layering.SiO2 forms a transparent glasss like layer on the single
crystal substrate.SiO2 is excellent insulating materual it hs very
good masking
properties
4. PhotoLithography:
For doping selectively, we have to remove the mask by
photolithography. We cover the entire surface of oxidized Si
with a photosensitive material called a photoresist. Bring this
photoresist coated substrate in contact with mask(glass or
transparent).Then subject it to UV radiation, after that it is easy
to remove the photoresist.

After development
5. Etching:
SiO2 is removed in desired place through etching
process using some chemical reactions.

6. Doping:
Adding specific amount of electrically active impurities
to silicon. Through Doping n+ type material is diffused into the
p+ type material.
7. Photolithography:
Again by photolithography and etching remove the SiO2
on p+ type material.

After etching
[Link]:
Deposit Al metal on top of the SiO2 layer for metal
contacts.

By etching process we have to remove Al on the SiO2 layer.


After developing the Zener diode with metal contacts is

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