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2SD1594 NPN Power Transistor Specs

This document provides the product specification for the SavantIC Semiconductor 2SD1594 silicon NPN power transistor. It includes descriptions of the TO-220Fa package and applications, absolute maximum ratings, pinning diagram, typical characteristics including current gain and switching times, package outline, and classifications for current gain.

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39 views3 pages

2SD1594 NPN Power Transistor Specs

This document provides the product specification for the SavantIC Semiconductor 2SD1594 silicon NPN power transistor. It includes descriptions of the TO-220Fa package and applications, absolute maximum ratings, pinning diagram, typical characteristics including current gain and switching times, package outline, and classifications for current gain.

Uploaded by

Rr hardiyanto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1594

DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage

APPLICATIONS
·Low frequency power amplifier
·High speed switching industrial use

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 7 A

ICM Collector current-Peak 15 A

IB Base current (DC) 3.5 A

Ta=25 1.5
PC Collector power dissipation W
TC=25 40

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1594

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=5A , IB1=0.5A,L=1mH 60 V

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V

VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V

ICBO Collector cut-off current VCB=100V ;IE=0 10 µA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=0.5A ; VCE=5V 40

hFE-2 DC current gain IC=3A ; VCE=5V 40 240

hFE-3 DC current gain IC=5A ; VCE=5V 20

Switching times

ton Turn-on time 0.5 µs

IC=5A ;IB1=0.5A
ts Storage time IB2=-0.5A; VCC=50V 0.5 µs
RL=10@

tf Fall time 1.5 µs

hFE-2 Classifications
R O Y

40-80 70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1594

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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