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2N5490/5496 Power Transistor Specs

This document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2N5490, 2N5492, 2N5494, and 2N5496. The transistors come in a TO-220 package and are intended for medium power and amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and power dissipation. Thermal and electrical characteristics like saturation voltage, gain, and transition frequency are also specified. Dimensional outlines for the TO-220 package are provided.

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269 views3 pages

2N5490/5496 Power Transistor Specs

This document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2N5490, 2N5492, 2N5494, and 2N5496. The transistors come in a TO-220 package and are intended for medium power and amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and power dissipation. Thermal and electrical characteristics like saturation voltage, gain, and transition frequency are also specified. Dimensional outlines for the TO-220 package are provided.

Uploaded by

Endy Weenas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496

DESCRIPTION
·With TO-220 package
·High power dissipation

APPLICATIONS
·For used in medium power and
amplifier applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2N5490/5494 60

VCBO Collector-base voltage 2N5492 Open emitter 75 V

2N5496 90

2N5490/5494 40

VCEO Collector-emitter voltage 2N5492 Open base 55 V

2N5496 70

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 7 A

IB Base current 3 A

PD Total power dissipation TC=25 50 W

Tj Junction temperature 150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 2.5 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2N5490/5494 40

Collector-emitter
VCEO(SUS) 2N5492 IC=0.1A ;IB=0 55 V
sustioning voltage

2N5496 70

2N5490 IC=2.0A;IB=0.2A

2N5492 IC=2.5A;IB=0.25A
Collector-emitter
VCEsat 1.0 V
saturation voltage
2N5494 IC=3.0A;IB=0.3A

2N5496 IC=3.5A;IB=0.35A

2N5490 IC=2.0A ; VCE=4V 1.1

2N5492 IC=2.5A ; VCE=4V 1.3


VBE Base-emitter on voltage V
2N5494 IC=3.0A ; VCE=4V 1.5

2N5496 IC=3.5A ; VCE=4V 1.7

2N5492 VCE=70V;VBE=1.5V

ICEV Collector cut-off current 2N5490/5494 VCE=55V;VBE=1.5V 1.0 mA

2N5496 VCE=85V;VBE=1.5V

ICER Collector cut-off current VCE=Rated VCEO;RBE=100> 0.5 mA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA

2N5490 IC=2.0A ; VCE=4V

2N5492 IC=2.5A ; VCE=4V


hFE DC current gain 20 100
2N5494 IC=3.0A ; VCE=4V

2N5496 IC=3.5A ; VCE=4V

fT Transition frequency IC=0.5A ; VCE=4V 0.8 MHz

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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