APT8024JLL
800V 29A 0.240W
POWER MOS 7TM S S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
227
enhancement mode power MOSFETS. Both conduction and switching G D
T-
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) SO
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's "UL Recognized"
patented metal gate structure. ISOTOP ®
D
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive G
• Lower Gate Charge, Qg • Popular SOT-227 Package
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT8024JLL UNIT
VDSS
ID
Drain-Source Voltage
AL
Continuous Drain Current @ TC = 25°C
800
29
Volts
IDM Pulsed Drain Current
N
1
IC 116
Amps
VGS
VGSM H
Gate-Source Voltage Continuous
C
±30
Volts
N
Gate-Source Voltage Transient ±40
PD
TE I O
Total Power Dissipation @ TC = 25°C 460 Watts
TJ,TSTG E T
Linear Derating Factor
C MA
3.68 W/°C
N
Operating and Storage Junction Temperature Range -55 to 150
°C
TL
IAR A OR
Lead Temperature: 0.063" from Case for 10 Sec.
V 1
300
AD INF
Avalanche Current (Repetitive and Non-Repetitive) 29 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 800 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
29
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.240 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
050-7075 Rev - 8-2001
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS APT8024JLL
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V 4420
Coss Output Capacitance VDS = 25V 850 pF
Crss Reverse Transfer Capacitance f = 1 MHz 140
Qg Total Gate Charge 3 VGS = 10V 163
Qgs
Qgd
Gate-Source Charge
Gate-Drain ("Miller ") Charge
AL VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
21
92
nC
td(on) Turn-on Delay Time
N IC VGS = 15V 17
tr
td(off)
Rise Time
Turn-off Delay Time
CH VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
16
51
ns
tf Fall Time
TE I O N RG = 0.6W
10
E
C MA T
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol N
A OR
Characteristic / Test Conditions MIN TYP MAX UNIT
V
AD INF
IS Continuous Source Current (Body Diode) 29
Amps
ISM Pulsed Source Current 1 (Body Diode) 116
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs) 850 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 22.0 µC
dv/ Peak Diode Recovery dv/ 5 V/ns
dt dt 10
THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RqJC Junction to Case 0.27
°C/W
RqJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 5.95mH, R = 25W, Peak I = 29A
j G L
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)
3.3 (.129) 1.95 (.077)
3.6 (.143) 2.14 (.084)
050-7075 Rev - 8-2001
14.9 (.587) * Source Drain
15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
38.2 (1.504) Source terminal.
* Source Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
