SUD40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
VDS (V) rDS(on) () ID (A)a
0.022 @ VGS = 10 V 30
60
0.025 @ VGS = 4.5 V 30
TO-252
Drain Connected to Tab
G D S
Top View
S
Order Number:
SUD40N06-25L N-Channel MOSFET
Parameter Symbol Limit Unit
Gate-Source Voltage VGS 20 V
TC = 25C 30
Continuous Drain Current (TJ = 175C)b ID
TC = 100C 30
Pulsed Drain Current IDM 100 A
Continuous Source Current (Diode Conduction) IS 34
Avalanche Current IAR 34
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 58 mJ
TC = 25C 75
Maximum Power Dissipation PD W
TA = 25C 1.4b, 2.5c
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C
Parameter Symbol Limit Unit
Free Air, FR4 Board Mount 60
Maximum Junction-to-Ambient RthJA
Free Air, Vertical Mount 110 C/W
Maximum Junction-to-Case RthJC 2.0
Notes:
a. Package limited.
b. Free air, vertical mount.
c. Surface mounted on 1” x 1” FR4 Board, t 10 sec.
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Document Number: 70264 www.vishay.com FaxBack 408-970-5600
S-57741—Rev. G, 31-Mar-98 2-1
SUD40N06-25L
Vishay Siliconix
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 2.0 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 20 A 0.022
VGS = 10 V, ID = 20 A, TJ = 125C 0.043
D i Source
S
Drain-Source
Drain O State
On S
On-State R i
Resistanceb rDS(on)
DS( ) W
VGS = 10 V, ID = 20 A, TJ = 175C 0.053
VGS = 4.5 V, ID = 20 A 0.025
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A S
Dynamic
Input Capacitance Ciss 1800
Output Capacitance Coss VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz 350 pF
F
Reverse Transfer Capacitance Crss 100
Total Gate Chargec Qg 40 60
Gate-Source Chargec Qgs VDS = 30 V
V, VGS = 10 V
V, ID = 40 A 9 nC
C
Gate-Drain Chargec Qgd 10
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V
V,, RL = 0 9W
0.9 9 20
ns
Turn-Off Delay Timec td(off) ID^ 20 A,
A VGEN = 10 V V, RG = 2 5W
2.5 28 50
Fall Timec tf 7 15
Source-Drain Diode Ratings and Characteristics (TC = 25C)
Pulsed Current ISM 20 A
Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/ms 48 100 ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
www.vishay.com FaxBack 408-970-5600 Document Number: 70264
2-2 S-57741—Rev. G, 31-Mar-98
SUD40N06-25L
Vishay Siliconix
Output Characteristics Transfer Characteristics
100 60
6V
VGS = 10, 9, 8, 7 V 5V
80
45
I D – Drain Current (A)
I D – Drain Current (A)
60
4V
30
40
TC = 125C
15
20
3V 25C
–55C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
70 0.04
TC = –55C
60
r DS(on) – On-Resistance ( Ω )
0.03
g fs – Transconductance (S)
50 25C
VGS = 4.5 V
125C VGS = 10 V
40
0.02
30
20
0.01
10
0 0
0 12 24 36 48 60 0 15 30 45 60
ID – Drain Current (A) ID – Drain Current (A)
Capacitance Gate Charge
3000 10
2500 VDS = 30 V
V GS – Gate-to-Source Voltage (V)
8 ID = 20 A
Ciss
C – Capacitance (pF)
2000
6
1500
4
1000
Coss
2
500
Crss
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50
VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)
Document Number: 70264 www.vishay.com FaxBack 408-970-5600
S-57741—Rev. G, 31-Mar-98 2-3
SUD40N06-25L
Vishay Siliconix
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 20 A
2.0
r DS(on) – On-Resistance ( Ω )
TJ = 150C
I S – Source Current (A)
(Normalized)
1.5
TJ = 25C
10
1.0
0.5
0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)
Drain Current vs. Case Temperature Safe Operating Area
50 200
100
Limited
40 by rDS(on)
I D – Drain Current (A)
I D – Drain Current (A)
100 ms
30 10
1 ms
20
10 ms
1
TC = 25C 100 ms
10
Single Pulse dc, 1 s
0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4 10–3 10–2 10–1 1 3
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600 Document Number: 70264
2-4 S-57741—Rev. G, 31-Mar-98
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