Superconducting RF Cavity Basics
Superconducting RF Cavity Basics
Presented here is an introduction to some of the concepts used in the tests performed on superconducting RF cavities in the SRF
group at Cornell. It is intended for the 'novice' to this field and by no means attempts a rigorous derivation. Assumed is some previous
exposure to the physics of waveguides and cavities. Explained is the concept of the Quality (Q) of a cavity, the coupling parameters and
how these quantities are determined by experiment. Furthermore a short overview of the results obtained for a typical cell is presented.
dU
1. THE THEORETICAL CONCEPTS Ptotal = - (4)
dt
1.1 THE QUALITY OF A CAVITY and we obtain U(t) by combining (4) with (2) to give:
The main task of the experiments is to determine
U(t) = Uo e-ωt/QL (5)
the performance of superconducting niobium cavities.
A possibility is to measure the so called unloaded
(5) tells us that U falls to 1/e in a time τ = Q L/ω which
Quality (Q o ) of the cavity as a function of the peak
can be measured experimentally to give the loaded Q.
electric field within at a given resonance frequency. Qo
We will return to this later on.
is defined by:
1.2 THE WIDTH OF A RESONANCE
Energy Stored in the Cavity
Q o = 2π
Energy dissipated in the walls per cycle
Usually, in the discussion of cavities and
waveguides one of the simplifications made is that the
If the angular frequency of the radiation is ω and we call
walls are perfectly conducting. In the case of isolated
the average dissipated power P diss then assuming an
cavities (ie. no ports) we have an infinite Q o and the
eiωt dependence for the fields we find
resonances of all modes are thus razor sharp δ-functions.
U However in a lossy cavity wall losses result in a
Qo = ω (1) finite Q o and energy transmission through any ports
Pdiss
means that Q L <>Q o which serve to broaden the
resonances. Excitation of a mode is hence possible
where U is the total energy stored in the cavity.
even if the frequency is not tuned perfectly, provided it
In practice though we somehow need to hook up
at least lies within the line width of the resonance.
the cavity to some source, to actually be able to 'inject'
We know that the energy density scales as the
the microwave radiation. As we will show later we also
electric field squared. Thus from (5) we can deduce that
need to measure the energy of radiation emitted through
the electric field in an loaded cavity decays as:
an output port in the cavity. Therefore input and output
probes are an experimental necessity, through which
E(t) = Eo e-ω o t/2Q L e-i(ωo+∆ω)t (6)
invariably energy will be lost. We denote the power
lost to the output probe by Pt and the power lost to the
where ωo is the resonance frequency of the equivalent
input probe by P e. We can define the loaded Quality
perfectly conducting cavity and ∆ω is included to allow
(QL) analogous to the unloaded Qo as:
for a possible (small) frequency shift in the resonance
U frequency due to any losses. If we wish to determine
QL = ω (2) the electric field as a function of frequency we simply
P total
need to Fourier transform (6):
where
P total = P diss + P e + P t (3) inf
from which we see that the energy density per frequency If we identify the 'coupling parameters' as βe = Q o/Q e
interval scales as: and βt = Qo/Qt then (12) can be recast as:
1 1 1
U(ω) α |E(ω)|2 α (9) = (1 + βe + βt) (13)
(ω−ω o -∆ω) 2 + (ω o /2Q o ) 2 QL Qo
which is of the classic Breit-Wigner shape, shown in Clearly, if we can determine the coupling parameters
Figure 1. and the loaded Q then Qo can be calculated.
Figure 1
Figure 2
The curve falls to half its peak value at frequencies
ω o /2Q L to the right and left of the central frequency The two terminals represent the input to the cavity. Z1
(ω ο + ∆ω). We identify this with the line width at is meant to simulate the impedance of the circuitry
half maximum Γ = ω ο /Q L . In the case of the leading to the input.
superconducting rf cavities used in the SRF group, Qo In the absence of any energy losses in the cavity
is typically around 109 and the width of the curve is walls (characterized by R in the circuit) and the input
only a tiny fraction of the resonance frequency. circuitry we would have a simple LC-circuit with
resonance frequency:
1.3 RELATIONSHIP BETWEEN QL AND Qo
√
1
ωo = (14)
Equation (5) is useful for determining the loaded Q LC
of a cavity hooked up to input and output lines.
However we usually wish to determine Q o so that we The energy stored in the resonant circuit alone is
can describe the characteristics of the cavity independent simply W stored = 1/2LI 2 where I is the peak current.
of the setup used to drive it. Similarly the average power dissipated is
To relate Q L to Q o we make two further Pdiss = 1/2RI2 so that the unloaded Qo follows from (1)
definitions which are similar to (1): as:
ωU 1/2 LI 2 ωL
Qe = (10) Qo = ω = (15)
Pe 1/2 RI 2 R
ωU
Qt = (11) Similarly, in the presence of the input line the power
Pt
dissipated in the load Z 1 is Pe = 1/2 Z 1 I 2 so that the
total power dissipated in the loaded circuit is P total =
combining (2) and (3) it is easy to see that:
1/2 RI 2 + 1/2 Z 1 I 2 . We see from (2) that Q L in (2)
1 1 1 1 takes on the form:
= + + (12)
QL Qo Qe Qt
ωL ωL/R
QL = = (16)
R + Z1 1 + Z 1 /R
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1-β 2
If we now identify β with Z1/R then using (15) we can Pr = ( 1 + β )
Pi (20)
see that
1 1
= (1 + β) (17) and by conservation of energy we have for the
QL Qo transmitted power (Pt):
√
fields in the inductor and capacitor have died down. In
Z2 = ( )
R 2- ωL -
1 2
ωC an actual cavity these transients would be due to the
cavity filling with energy when power is switched on.
This will be discussed later.
where Vi and Vr (Ii and Ir) are the voltages (currents) of 4β2
P e = I2inst Z1 = Pi (23)
the incident and reflected waves respectively. Similarly (1 + β) 2
V c (I c ) represents the voltage (current) of the wave
transmitted across the boundary to our equivalent 2.1 DETERMINING Qo EXPERIMENTALLY
circuit. By definition the impedance is:
It is now up to us to put the results obtained for
Z 1 = Vr/Ir = V i/Ii, Z2 = V c/Ic the equivalent circuit to use in determining the Q o of
the cavity.
allowing us to solve the two equations to give: Comparing (17) with (13) we see that provided we
use β e = Q o /Q e for the coupling between the input
Vr 1 - Z 1 /Z 2 probe and the cavity and if no output probe is present,
= (18)
Vi 1 + Z 1/Z2 then the reflected power is simply given by (20), which
we repeat here:
If the equivalent circuit is driven at ωo (on resonance)
1 - βe 2
Pr = P
then Z2 = R (the reactance is zero at ωo). In this case,
β i (24)
thus: 1 + e
Vr 1-β
= (19) and in the same manner the instantaneously emitted
Vi 1 + β power is given by (23):
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√
Pr only very little power will be dissipated via this output.
1 +/- In this limit the previous discussion and the expressions
Pi
βe = (26) for Pe and Pr are still valid. Since we know that Pt α U
√
Pr by (11) we obtain the relation:
1 -/+
Pi
E peak α √
Pt (32)
and
1 A measurement of β and τ allows us to calculate Q o
βe = (27) using (29) and (30). This is done at low field levels for
√
Pi reasons which will become clear later. Furthermore we
2 -1
Pe know P diss from (21) which allows us to calculate U
using (1). It is then trivial to calculate Epeak from (31)
These allow us determine the coupling between a assuming we have previously determined κ e . The
transmission line and our cavity by simply measuring proportionality constant in (32) then follows from a
the incident power, the reflected power and, if we wish, measurement of Pt. At the same time this process also
the instantaneously emitted power P e as P i is turned yields the factor relating Pt to U.
off. One could argue that all this is not necessary since
Furthermore, (10) indicates that if the input power we can determine Qo and Epeak directly from (30) and
is turned off, the power emitted from the cavity as a (31). This is true. However, this relies critically on
function of time is proportional to the present energy U our ability to measure τ. At high field strengths
stored within. We know from (5) that U decays as: processes such as field emission and thermal breakdown
degrade the Qo of the cavity. If we were to measure τ
U(t) = Uo e-ωot/QL (28) from the decay of P e or P t as P i is pulsed we would
observe that τ varies. At the start of the decay τ is
small (small Qo) until the fields within the cavity drop
Note that it is QL which appears in this expression, not
below the threshold value for these processes. Qo then
Q o . Clearly the emitted power should therefore also
changes and correspondingly τ. To avoid the difficulties
decay with the same time constant
arising from this we determine the factors relating Pt to
QL U and E 2 peak at low field strengths, where field
τ= (29) emission etc. isn't possible and τ is constant
ωo throughout a decay. At the critical high fields our value
for P t then directly yields U and E peak . From the
which we can measure directly. Once we have former we then calculate Qo via (1) and (21).
determined βe from either (26) or (27) we finally obtain
the unloaded Qo:
2.2 EXPERIMENTAL TECHNIQUES
Qo = QL (1 + βe) = ωoτ (1 + βe) (30)
2.2.1 General Setup
To obtain the peak electric field (E peak ) in the
cavity we recall that energy density is related to the To couple the power into the cavity a setup as
electric field by: shown in Figure 3 is used. The power from the source
is carried to the cavity via a coaxial cable as a TEM
Epeak= κe
√U (31) mode. The central conductor protrudes into the beam
tube of the cavity which forms the outer conductor.
where κ e is a constant dependent on the geometry of Since TEM modes cannot be supported in a
the cavity. For a pill box cavity this factor can be hollow waveguide, we obtain a mixing of TE and TM
calculated analytically, however for the geometries we modes once the end of the central conductor is reached.
are using it needs to be determined numerically using The diameter of the beam tube is arranged in such a
manner, that the lowest cutoff frequency lies above the
frequency we operate at.
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possible, especially when the cavity Q has degraded a height of the square pulses when the system is taken
lot due to field emission, multipacting etc. out of lock. Again one should note that these powers
are measured at the directional coupler. However if we
determine both Pi and Pe from the reflected power trace
both signals will suffer the same attenuation on their
way from the cavity to the coupler, so that the ratio Pi
to the true P e will be the same as that of P f to the
measured value of Pe . Furthermore since only the ratio
of the two is required we don't need to calibrate the
scope to obtain absolute units.
Finally we also measure the transmitted power, Pt
and P i, this time in proper units. Note that this needs
to be done with the modulator set to cw. The powers
are measured on calibrated power meters.
Once these preliminary measurements have been
completed we can calibrate the system as explained in
section 2.1. We are now in a position to measure Q
versus Epeak as the input power is increased. Once the
calibration has been done measurements of τ are no
longer required.
√
Pr frequency ω the electrons will return to the same point
α= (Cavity out of lock) in phase with the field and impact on the surface.
Pf
If the secondary emission coefficient (δ) of that surface
is greater than 1, further electrons are emitted usually
so that in future we can always obtain Pi by measuring
with a few electron volts of energy. They too follow
Pf once α has been determined. the closed orbit, gaining energy from the perpendicular
Measurement of P i and the instantaneously electric field and impact at the same point. We therefore
emitted power P e yields β directly from (27). P e is arrive at an avalanche situation. If the input power is
obtained from the height of the peak produced as the increased it no longer serves to increase the stored
incident power is switched off (see Figure 6). On the energy in the cavity, but simply enhances the
other hand Pf is given by the height of the peak as the multipacting process. It is as if we have reached a
input power is switched on or, alternatively, by the barrier beyond which Epeak no longer can be increased.
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Correspondingly, if we look at the transmitted power Pt fully understood and the reader is referred to literature for
which is a measure of the energy stored in the cavity, the latest theory on these. Here we simply present a
we see that once the fields within are high enough for short overview.
multipacting, clipping occurs. An increased P i no Field emission3 occurs when the probability of
longer increases U and thus Pt remains constant. Hence tunnelling through the potential barrier presented to the
we never achieve unity coupling, and Pr remains finite. electrons in the metal (the work function) becomes large
enough to produce a significant current. This in turn
draws energy from the incident power thereby spoiling
the cavity Q. Typical of barrier penetration is the
electron transmission probability's exponential
dependence on field strength, which serves to lower the
barrier height. Fowler and Nordheim treated this
problem quantum mechanically and found that4:
AE2 φ 3/2
j(E) = exp -B (33)
φ E
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sites. Due to Bremsstrahlung we thus get very of the surface. This causes heating of the surrounding
energetic x-rays, which are a signature for field areas, driving these normal as well once the temperature
emission. These x-rays, sometimes, are even capable of of the defect is above 9.2K (T c for Nb). Because the
penetrating the ~2 foot sheetrock blocks used for normal state is far more resistive (by many orders of
shielding. The number of emission sites increases magnitude) a substantial amount of power dissipation
exponentially with the field strength and we observe a will occur in this region. Q o drops dramatically and
steep decrease in the Q o versus E peak curve obtained hence τ too, typically from about 0.5s (Q o ~ 1010) to
once field emission occurs (see Figure 9). only a ~ milliseconds. A trace of P t looks somewhat
Field emission currents are spread out over areas as like Figure 8.
small as 10-9 cm2 and typically current densities are
around 100 A/cm2 although they can reach densities as As the cavity starts filling the fields inside cause
high as 109 A/cm2. Due to the finite resistance of the thermal breakdown. The Q then suddenly drops yielding
niobium and the fast time scales involved we therefore a tiny τ and resulting in a mismatch between the input
can have regions of severe heating. These drive the coupler and the cavity. No more energy is input in the
niobium into the normal state and ultimately are cavity. The remaining fields within decay over a period
capable of melting the material. Sometimes emitters ~ τ, yielding the spikes in fig. 8. During the decay the
will process away leading to what is believed are small normal regions are cooled by the helium bath and go
'explosions'. Subsequent examination of emission superconducting again. The original Q thus is restored,
sites under an electron microscope frequently reveals and we once again observe transmitted power and the
characteristic 'star bursts', so called because of the star process described above repeats once more. Increasing
like area (perhaps 50 - 100µm across) of reduced the input power thus only serves to increase the
secondary emission coefficient around the emission site. frequency of these breakdowns.
At the center usually lies a lump of molten niobium. To reduce thermal breakdown and field emission it
Different methods have been developed to reduce is imperative to go through extensive clean room
field emission and to push the fields at which it occurs procedures in order to minimize any foreign particles.
to higher limits. They include a) extended rinsing, b) Very effective in improving field strengths at which
heat treatment c) He processing and d) RF processing. thermal breakdown first occurs, is an increased thermal
For a discussion of these the reader is referred to conductivity of niobium. Any heat produced by the
reference 3. The last one on the list (d) is currently tiny impurities is quickly carried away by the
being studied extensively4 and involves 'blasting' the surrounding regions, thereby reducing the likelihood
cavity at high power levels (often pulsed with Powers that surrounding niobium is also driven normal. The
~10's of kW and pulse times ~100 µs). In certain thermal conductivity is strongly related to the purity of
instances, following this procedure one finds that the the niobium. Often quoted is the RRR or the 'residual
emitter has processed away. resistance ratio' which is the ratio of the resistance at
room temperature to that at 4.2K with the niobium in
the normal state. (At 4.2K this is done by driving the
material normal with a sufficiently high magnetic field,
H > H c = critical field strength). Since the RRR is
directly related to the impurity concentration, one finds
that high RRR materials are not as susceptible to
Figure 8: Trace of Pt with thermal breakdown occurring breakdown as low RRR ones. Typically the cavities we
use have a RRR of the order of 100 - 500 at present.
Field emission as well as imperfections and However we still need to contend with field emission
impurities as small as 0.1 mm across can also lead to a which proves to be the limiting process.
breakdown behavior called thermal breakdown. Tiny
regions on the surface of the cavity which are not 3. TYPICAL RESULTS
superconducting, or only become superconducting at
temperatures lower than the bulk superconductor will Figure 9 presents a Q ο versus E peak curve
dissipate far more energy from the rf-field than the rest somewhat typical of the results usually obtained.
Initially the Q o is high (1010) and remains constant as
4 Joel Graber 'An Apparatus for High Power Processing of
the power is increased. In this region multipacting is
Field Emitters in Superconducting RF Cavities' (MS Thesis),
Cornell University, May 1990 frequently observed but as mentioned previously it
usually is not difficult to process through this.
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At higher field levels (~ 15 MV/m) the first X- expected from the extrapolation of the curve. This is
rays being produced in the cavity were detected, an probably an example of an emitter being processed
indication that field emission was occurring. We see away, yielding an improved quality. However, as the
that from that point on the Qo rapidly falls off reaching field is increased to even greater values, new emitters
the low 109 at field levels around 35 MV/m. Note become active and the Qo drops further.
however the point at about 31 MV/m. During the For other cavities other features in such a plot
experiment we found that the X-rays suddenly were may exist. The constant Qo at low field levels and the
reduced as that point was being measured. We also see rapid fall off at higher ones, though, is typical for all
that its Q o is significantly higher than would be results.
Figure 9
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APPENDIX A)
Detailed schematic diagram of the setup used for single cell, 1.5 GHz Niobium cavities.
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APPENDIX B)5 (B5) one finds that the following analysis yields
unphysical results.
Presented here is a short discussion of the behavior Now back to our original problem. By (1) we
of reflected power as a function of time during the know that the power dissipated in the cavity [P d (t)]
transient periods just after the input power is switched scales linearly with U(t), ie:
on. In this case the the cavity is still filling with
energy, ie. dU/dt is not zero, as would be the case in the ωU(t)
Pd(t) = = Pdiss (1 - e-t/2τ)2 (B6)
steady state. By conservation of energy we can write Qo
down the following relation:
which we can recast using (21) as:
dU
Pr = Pi - Pdiss - (B1)
dt 4β
Pd(t) = (1 - e-t/2τ)2 Pi (B7)
(1 + β) 2
where Pdiss is given by (21) for the steady state. Now,
from (5) we recall that U decays exponentially as e-t/τ Furthermore we recall that from (1)
once the input power is turned off. This implies that
the electric field decays as e-t/2τ. Similarly, when the PdissQo Pi Qo
4β
input power is initially switched on, we expect the Uo = = (B8)
ω (1 + β) 2 ω
electric field to rise as:
E(t) = Eo √
1 - e -t/τ (B5)
which differs from (B2). To resolve this problem, we Figure B1: Plot of the reflected power for a) perfect
appeal to the equivalent circuit again. Recall that when coupling, b) overcoupling and c) undercoupling.
calculating the resonant frequency, as well as the time
dependence of the fields in for example the capacitor, we We can therefore rewrite (B1) as:
use the fields as the fundamental quantity, not the
energy, in which case we obtain a (1 - e-t/τ) dependence
Pr(t) =Pi 1 - (1-e-t/2τ)2
4β
for rising fields. In an analogous manner, if we
consider the electric fields in the cavity it is actually (1 + β) 2
quite straight forward to derive expression (B2) for E(t). x
We will thus use (B2) and (B3) in the following 4β Q ο d
analysis. If indeed one instead proceeds to use (B4) and -P
i ω ( 1 + β) 2 dt
(
(1 - e -t/2τ ) 2 ) (B9)
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Pr(t) =Pi x
x 1 - (1-e-t/2τ)e-t/2τ
4β 4β
(1-e -t/2τ ) 2 -
(1 + β) 2 (1 + β)
2
Pr = (11 +- ββ ) P i
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