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Module / Unit - 1: P - N Diode

The document contains review questions and practice problems related to p-n diodes. It begins with 5 review questions about hole concentration in n-semiconductors, depletion region formation, potential energy diagrams of forward and reverse biased p-n junctions, how depletion region width varies with applied voltage, and zener and avalanche breakdown processes. It then lists 6 sample problems calculating properties like carrier densities, barrier potentials, and depletion region widths for various semiconductor materials and doping conditions. The final problem calculates the maximum resistance value required to maintain a constant 9V load voltage in a zener diode circuit with a 24V source and 1.5kΩ load resistor.

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Mohammed AL-Maaitah
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74 views6 pages

Module / Unit - 1: P - N Diode

The document contains review questions and practice problems related to p-n diodes. It begins with 5 review questions about hole concentration in n-semiconductors, depletion region formation, potential energy diagrams of forward and reverse biased p-n junctions, how depletion region width varies with applied voltage, and zener and avalanche breakdown processes. It then lists 6 sample problems calculating properties like carrier densities, barrier potentials, and depletion region widths for various semiconductor materials and doping conditions. The final problem calculates the maximum resistance value required to maintain a constant 9V load voltage in a zener diode circuit with a 24V source and 1.5kΩ load resistor.

Uploaded by

Mohammed AL-Maaitah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Module / Unit -1

p - n Diode

Review Questions:
1. In a n-semiconductor, hole concentration is less than its intrinsic value. Discuss.
2. How is depletion region formed across a p-n junction? What type of charges are
present in the depletion region when junction is not biased?
3. Draw potential energy diagrams for a forward as well as a reverse biased p-n junction
and explain the flow of currents in both the cases.
4. The width of depletion region varies with applied voltage. Explain.
5. Explain the zener and avalanche processes of p-n junction break down. How does a
zener diode stabilize voltage in a circuit? Draw the circuit and explain.

Problems:
1.1 p-silicon has resistivity of 100 Ωcm. The other parameters for silicon are:
Intrinsic carrier density, ni = 1010 cm-3,
Hole mobility, µp = 500 cm2/v.s.
Electron mobility, µn = 1200 cm2/v.s.
Calculate the number of electrons for every 5000 million holes in the semiconductor.

Solutions: The hole density in p-semiconductor is related to resistivity as

1
 p.q. p

Therefore,
1
 p 1.6 10 19  500
100

Or p = 1.25 X 1014 / cm3

The electron density can be obtained from the relation,

n.p = ni2
2
ni 10 20
or n   8  10 5 / cm 3
p 1.25 1014

Since for every 1.25 X 1014 holes, there are 8 X 105 electrons, therefore 5000 million (= 5 X
109) holes will have

8  10 5  5 10 9 40
  32 electrons
1.25 1014 1.25

1.2 The resistivity of a silicon sample is 100 Ω cm. Calculate the hole density if silicon is p-
type and electron density if it is is n-type.
Charge mobilities are :
µp = 500 cm2/v.s
µn = 1300 cm2/v.s

Solution:

In case the silicon is p-type, its conductivity σ , or resistivity ρ is,

1
  p.q. p

Where p is the hole concentration (same as hole density)

Then

1 1
p 
 .q. p 100 1.6 10 19  500

Or , p = 1.25 X 1014 cm-3


And in the case, the silicon is n-type, the resistivity is

1
 n.q. n

Then the electron density n is,

1 1
n 
 .q. n 100 1.6 10 19 1300

Or, n = 4.8 1013 cm-3

1.3 A germanium p-n step junction has donor density ND = 1015/ cm3 on n-side and
acceptor density NA = 1017/cm3 on p-side. Calculate the height of the potential barrier at
the junction if intrinsic carrier density ni, equals 2.5 X 1013 /cm3. Assume kT/q = 0.026V.

Solution:

The value of barrier potential is expressed as,

 kT   N AND 
VB    ln  
 n2 
 q   i 

Where NA and ND are respectively acceptor and donor densities on p and n-sides and ni is
intrinsic carrier density.

Then,

 1017 1015 
VB  0.026 ln  2 

 2.5 1013  

 0.026 ln 1.6 10 5 
 0.026 11.98

Or, VB = 0.311 volt


1.4 A silicon p-n diode has abrupt junction formed with acceptor ion density of 3X1015cm-3
on p-side and donor density of 2X1014 cm-3 on n-side of the junction. Calculate the
barrier potential height and width of the depletion region. Other data for silicon is
intrinsic carrier density = 2X1010 cm-3 , voltage equivalent of thermal energy, kT/q =
0.026 V, permittivity of silicon, Є (=Єr , Єo) = 10-12 farad/cm.

Solution:

The barrier potential is expresses as,

kT  N A N D 

VB  ln  2 
q  ni 

Therefore,

 31015  2 1014 
VB  0.026 ln  
 
2 1010
2


 0.026 ln 1.5 10 9 
 0.026  21.021

Or, VB = 0.54 volt

The depletion width for an unbiased p-n junction is given by


1/ 2
 2   1 1 
W      VB
1/ 2

 q  N A N D 

On substituting values of various parameters,


1/ 2
 2 10 12   1 1 
W   
19  
  0.541/ 2
 1.6 10   310
15
2 1014 

0r W = 1.89 X 10-4 Cm.


1.5 A germanium diode is formed with donor density, ND=1015cm-3, and acceptor density NA
1.5 X 1016 . Avalanche breakdown occurs in the diode when the field reaches 2.20
kV/cm. Calculate the breakdown voltage. The permittivity of the semiconductor Є (=Є r ,
Єo) = 10-12 farad/cm.

Solution:

The externally applied voltage, V, gives rise to maximum electric field, Emax, at the junction.
And Emax is expressed as,

1/ 2
 2qN A N D 
Emax    VB V 1 / 2
N A  N D 

Here VB is built-in-voltage (same as barrier height) and Є is permittivity of the semiconductor.

Now, VB << V, and junction breakdown occurs at reverse bias therefore, taking applied
voltage as negative and neglecting VB, we have

1/ 2
 2qN A N D 
Emax   V
N A  N D  

Now, Є (=Є0 , Єr) is the permittivity

From the above equation

( N A  N D )
2
E
V  max
2qN A N D

or V 
2.2 10  10 1.510
5 2 12
 1015
16

2 1.6  10 19 1.5  1016  1015

Or, V = 161.33 volts


1.6 The circuit shown uses a 9.0V zener diode. If the load resistance RL is equal to 1.5 kΩ,
and the dc source equals 24V, find the maximum value of resistor R required to
maintain a constant voltage of 9V across the load.

Vs Vz 1.5 k
RL

Solution:

The voltage drop across load RL will be constant and equal to zener voltage VZ as long as
zener diode works in reverse bias with a voltage equal to or larger than V Z,

The voltage drop across resistor R is,

R.I = VS - VZ

Where, I is the current through R. The minimum current required through load RL to maintain
a voltage of VZ is equal to VZ/RL.

In the limit this is also the current through resistor R. Then

RL
R  VS  VZ 
VZ

or , R
24  91.5 10 3
9
or , R  2.5 k

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