Scribd
Upload
336 views3 pages

2sa1106 PDF

This document provides product specifications for the 2SA1106 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, characteristics including current gain and transition frequency, and the package outline dimensions. The transistor is suitable for audio power amplifier and DC-DC converter applications operating at high frequencies and power dissipation.

Uploaded by

Juan Carlos Ruiz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
336 views3 pages

2sa1106 PDF

This document provides product specifications for the 2SA1106 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, characteristics including current gain and transition frequency, and the package outline dimensions. The transistor is suitable for audio power amplifier and DC-DC converter applications operating at high frequencies and power dissipation.

Uploaded by

Juan Carlos Ruiz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1106

DESCRIPTION
·With TO-3PN package
·High frequency
·High power dissipation

APPLICATIONS
·Audio power amplifer applications
·DC-DC converters

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -200 V

VCEO Collector-emitter voltage Open base -140 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -10 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1106

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -140 V

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V

VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.8 V

ICBO Collector cut-off current VCB=-140V; IE=0 -100 µA

IEBO Emitter cut-off current VEB=-6V; IC=0 -100 µA

hFE DC current gain IC=-5A ; VCE=4V 50 180

fT Transition frequency IE=1A ; VCE=-12V 20 MHz

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1106

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

You might also like