CHARACTERISTICS OF LED
AIM:- To Examine the Voltage –Ampere (VI) Characteristics of Light Emitting Diode
(LED).
APPARATUS:-
Experiment Board,
Regulated Power Supply(DCPS),
Milliemeter,
Voltmeter.
THEORY:-
As the name indicates, it is a forward biased PN junction which emits visible light when
energized. As discussed earlier(fig a),charge carrier recombination takes place when
electrons from then sidecross the PN junction and recombine with the holes on the p side.
Fig (a)
Now, electrons are in the higher conduction band on the n side where as holes are in the
lower valance band on p side. During recombination some of the energy difference is
given up in the form of heat and light (i.e. photons). For Si and Ge junctions, greater
percentage of this energy is given up in the form of heat so that the amount emitted as
light is insignificant. But in the case of other semiconductor materials like gallium
arsenide (GaAs),Gallium Phosphide (GaP) and Gallium-Arsenide-Phosphide (GaAsP),a
greater percentage of energy released during recombination is given out in the form of
light, If the semiconductor material is translucent , light is emitted and the junction
becomes a light source. i.e. a light emitting diode (LED) as shown schematically in fig
(a).The color of the emitted light depends on the type of material used as given below:
1. GaAs – infrared radiation (invisible)
2. GaP – red or green light
3. GaAsP – red or yellow (amber) light.
LEDs that emit blue light are also available but red is the most common . LEDs emit no
light when reverse biased. In fact , operating LEDs in reverse direction will quickly
destroy them.
CONSTRUCTION :-
Broadly speaking, the LED structures can be divided into two categories :
1. Surface – emitting LEDs :- These LEDs emit light in a direction perpendicular to the
PN junction plane.
2. Edge – emitting LEDs :- These LEDs emit light in a direction parallel to the PN
junction plane.
Fig (b)
Fig(b) shows the construction of a surface emitting LED. As seen from this figure, on n
type layer is grown on a substrate and a p type layer is deposited on it by diffusion. Since
carrier recombination takes place in the p layer, it is kept upper most. The metal mode
connections are made at the outer edges of the p layer so as to allow more central surface
area for the light to escape.
A metal (gold) film is applied to the bottom of the substrate for reflecting as much light
as possible to the surface of the device and also to provide cathode connection. LEDs are
always encased in order to protect their delicate wires. Being mode of semiconductor
material, it is rugged and has a life of more than 10,000 hours.
WORKING:-
The forward voltage across an LED is considerably greater than for a silicon PN junction
diode. Typically the maximum forward voltage for LED is between 1.2 volt and 3.2 volt
depending on the device. Reverse breakdown voltage for an LED is of the order of 3 volt
to 10 volt. Fig (c-1) shows a simple circuit to illustrate the working of an LED. The LED
emits light in response to a sufficient forward current. The amount of power output
translated into light is directly proportional to the forward current as shown in fig(c-2). It
is evident from this figure that greater the forward current, the greater the light output.
Fig (c-1)
Fig (c-1)
APPLICATION:-
To choose emitting diodes for a particular application, one or more of the following point
have to be considered, wavelength of light emitted input power required, output power,
efficiency, turn-on time, turn-off time, mounting arrangement, light intensity and
brightness etc. Since LEDs operate at voltage levels from 1.5 volt to 3.3 volt, they are
highly compatible with solid state circuitry.
Their uses include the following :
1. LEDs are used in burglar alarm systems;
2. For solid state video displays which are rapidly replacing cathode ray tubes(CRT);
3. In image sensing circuits used for picture phone;
4. In the field of optical fibre communication systems where high radiance GaAs
diodes are matched into the silica fibre optical cable;
5. In data links and remote controllers;
6. In arrays of different types for displaying alpha numeric (letters and numbers)or
supplying input power to lasers or for entering information into optical computer
memories;
7. For numeric display in hand held or pocket calculators.
PROCEDURE:-
1. Trace the circuit.
2. Connect milli-ammeter and digital voltmeter in forward bias condition as shown
in circuit diagram across a LED.
3. Switch the power supply and increase the voltage slowly.
4. Note down the reading of milli-ammeter and voltmeter.
5. Repeat the same process for red, green and yellow LED.
6. Note down the graph against for voltage and current for each LED.
GRAPH:-
Static resistance Rs=VR/IR K
OBSERVATION TABLE:-
Sr Supply VR IR VY IY VG IG
No. voltage (volt) (mAmp) (volt) (mAmp) (volt) (mAmp)
Vs(volt)
1 1
2 Knee
voltage
3 2
4 2.5
5 3
6 3.5
7 4
8 4.5
9 5
10 5.5
11 6
CONCLUSION:-
From this experiment it is found that conducting it emits lights starts as the
applied voltage is increased the emission of light also increases also is simple diode
heat is emitted as conduction take place but in LED light is emitted.
