MRS1504T3G,
NRVS1504T3G
Surface Mount Standard
Recovery Power Rectifier
SMB Power Surface Mount Package
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Features mesa epitaxial construction with glass passivation. Ideally
suited for high frequency switching power supplies; free wheeling
diodes and polarity protection diodes. STANDARD RECOVERY
RECTIFIER
Features 1.5 AMPERES, 400 VOLTS
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Stable, High Temperature, Glass Passivated Junction
• AEC−Q101 Qualified and PPAP Capable
• NRVS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• All Packages are Pb-Free* SMB
CASE 403A
Mechanical Characteristics: PLASTIC
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in MARKING DIAGRAM
• Weight: 95 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable AYWW
RGG G
• Maximum Temperature of 260°C / 10 Seconds for Soldering G
• Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead
• ESD Ratings:
♦ Machine Model = C A = Assembly Location
♦ Human Body Model = 3A Y = Year
WW = Work Week
RGG = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
MRS1504T3G SMB 2,500 /
(Pb−Free) Tape & Reel
NRVS1504T3G SMB 2,500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:
July, 2012 − Rev. 6 MRS1504T3/D
MRS1504T3G, NRVS1504T3G
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 400 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IO A
(At Rated VR, TI = 118°C) 1.5
Peak Repetitive Forward Current IFRM A
(Rated VR, Square Wave, 20 kHz, TI = 118°C) 3.0
Non−Repetitive Peak Surge Current IFSM A
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) 50
Storage/Operating Case Temperature Range Tstg, TC −55 to 150 °C
Operating Temperature Range TJ −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1) Rtjl 18 °C/W
Thermal Resistance, Junction−to−Ambient (on 1″ sq. Cu. PCB pattern) Rtja 79 °C/W
1. Minimum pad size.
ELECTRICAL CHARACTERISTICS
Rating Symbol TJ = 25_C TJ = 100_C Unit
Maximum Instantaneous Forward Voltage (Note 2), see Figure 2 VF V
(IF = 1.5 A) 1.04 0.96
(IF = 2.25 A) 1.10 1.02
Maximum Instantaneous Reverse Current, see Figure 4 IR mA
(VR = 400 V) 1.0 340
(VR = 200 V) 0.5 180
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%
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2
MRS1504T3G, NRVS1504T3G
100
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100 100
10 10
TJ = 100°C
TJ = 100°C
TJ = 150°C
1.0 1.0 TJ = 150°C
TJ = 25°C
TJ = 25°C
TJ = -40°C
0.1 0.1
0.6 0.8 1.0 1.2 1.4 1.6 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E-6 10E-3
I R, MAXIMUM REVERSE CURRENT (AMPS)
TJ = 150°C
1.0E-3
I R, REVERSE CURRENT (AMPS)
10E-6 TJ = 150°C
TJ = 100°C TJ = 100°C
100E-6
1.0E-6
10E-6
100E-9
1.0E-6
TJ = 25°C
TJ = 25°C
10E-9
100E-9
1.0E-9 10E-9
0 100 200 300 400 0 100 200 300 400
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
2.5 2.5
I O , AVERAGE FORWARD CURRENT (AMPS)
FREQ = 20 kHz
PFO , AVERAGE POWER DISSIPATION (WATTS)
dc
dc
2.0 2.0 SQUARE WAVE
SQUARE WAVE Ipk/Io = p
1.5 1.5 Ipk/Io = 5
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 5
1.0 1.0
Ipk/Io = 10 Ipk/Io = 20
0.5 Ipk/Io = 20 0.5
0 0
0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
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3
MRS1504T3G, NRVS1504T3G
100
TJ = 25°C
C, CAPACITANCE (pF)
10
1.0
0 10 20 30 40 50 60 70 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED
1.0
50%
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
Rtjl(t) = Rtjl*r(t)
0.001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100
T, TIME (s)
Figure 8. Thermal Response, Junction−to−Lead
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
20%
0.1
10%
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000
T, TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient
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MRS1504T3G, NRVS1504T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.95 2.30 2.47 0.077 0.091 0.097
b D A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.96 2.03 2.20 0.077 0.080 0.087
c 0.15 0.23 0.31 0.006 0.009 0.012
D 3.30 3.56 3.95 0.130 0.140 0.156
E 4.06 4.32 4.60 0.160 0.170 0.181
POLARITY INDICATOR HE 5.21 5.44 5.60 0.205 0.214 0.220
OPTIONAL AS NEEDED
L 0.76 1.02 1.60 0.030 0.040 0.063
L1 0.51 REF 0.020 REF
A1
L L1 c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085 SCALE 8:1 ǒinches
mm Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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