PD -90467

REPETITIVE AVALANCHE AND dv/dt RATED IRF460


HEXFET TRANSISTORS 500V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)

Product Summary
Part Number BVDSS RDS(on) ID
IRF460 500V 0.27Ω 21

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching n Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed
amplifiers and high energy pulse circuits. n Simple Drive Requirements
n Ease of Paralleling

Absolute Maximum Ratings

Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 21
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 14 A
I DM Pulsed Drain Current ➀ 84
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 1200 mJ
IAR Avalanche Current ➀ 21 A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 3.5 V/ns
TJ Operating Junction -55 to 150
o
T STG Storage Temperature Range C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g

For footnotes refer to the last page

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
∆BV DSS/∆TJ Temperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.27 VGS = 10V, ID = 14A ➃
Ω
Resistance — — 0.31 VGS = 10V, ID =21A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Ω
gfs Forward Transconductance 13 — — S( ) VDS > 15V, IDS = 14A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS=400V,VGS=0V
— — 250 µA VDS =400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
nA
I GSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Qg Total Gate Charge 84 — 190 VGS = 10V, ID=21A
Qgs Gate-to-Source Charge 12 — 27 nC VDS = 250V
Qgd Gate-to-Drain (‘Miller’) Charge 60 — 135
td(on) Turn-On Delay Time — — 35 VDD =250V, ID =21A,
tr Rise Time — — 120 RG =2.35Ω
ns
td(off) Turn-Off Delay Time — — 130
tf Fall Time — — 98
LS + LD Total Inductance — 6.1 — nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)

Ciss Input Capacitance — 4300 VGS = 0V, VDS = 25V

Coss Output Capacitance — 1000 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 250 —

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 21
A
ISM Pulse Source Current (Body Diode) ➀ — — 84

VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 21A, VGS = 0V ➃

t rr Reverse Recovery Time — — 580 nS Tj = 25°C, IF = 21A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 8.1 µC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 0.42
°C/W
R thJA Junction to Ambient — — 30 Typical socket mount

For footnotes refer to the last page

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF460

13 a& b

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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RD
V DS

VGS
D.U.T.
RG
+
-V DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
90%

10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF460

1 5V

L D R IV E R
VD S

RG D .U .T +
V
- DD
IA S A
10V
20V
tp 0 .0 1 Ω

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D S S
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Foot Notes:
➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 21A, di/dt ≤ 160A/µs,
maximum junction temperature. VDD≤ 500V, TJ ≤ 150°C
➁ VDD = 50V, starting TJ = 25°C, Suggested RG =2.35 Ω
Peak IL = 21A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-204AE (Modified TO-3)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 1/01

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