FDQ7238S

September 2003

FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description Features
The FDQ7238S is designed to replace two single SO-8
• Q2: 14 A, 30V. RDS(on) = 9.5 mΩ @ VGS = 10V
MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on RDS(on) = 10.5 mΩ @ VGS = 4.5V
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology. • Q1: 11 A, 30V. RDS(on) = 14.5 mΩ @ VGS = 10V

RDS(on) = 16 mΩ @ VGS = 4.5V

S2
S2
S2
G2
SO-14 G1
pin 1 Vin

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q2 Q1 Units

VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±16 ±16 V
ID Drain Current - Continuous (Note 1a) 14 11 A
- Pulsed 50 50
PD Power Dissipation for Single Operation (Note 1a & 1b) 2.4 1.8 W
(Note 1c & 1d) 1.3 1.1
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 °C/W
(Note 1c & 1d) 94 118

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDQ7238S FDQ7238S 13” 16mm 2500 units

2003 Fairchild Semiconductor Corporation FDQ7238S Rev A1 (W)

 FDQ7238S
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA Q2 30 V
VGS = 0 V, ID = 250 µA Q1 30
∆BVDSS Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Q2 26 mV/°C
∆TJ Coefficient ID = 250 µA, Referenced to 25°C Q1 25
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q2 500 µA
Q1 1
IGSSF Gate-Body Leakage, Forward VGS = 16 V, VDS = 0 V Q2 100 nA
Q1 100
IGSSR Gate-Body Leakage, Reverse VGS = −16 V, VDS = 0 V Q2 −100 nA
Q1 −100

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 1.4 3 V
VDS = VGS, ID = 250 µA Q1 1 1.4 3
∆VGS(th) Gate Threshold Voltage ID = 10 mA, Referenced to 25°C Q2 −3 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 −5
RDS(on) Static Drain-Source VGS = 10 V, ID = 14 A Q2 7 9.5 mΩ
On-Resistance VGS = 4.5 V, ID = 13 A 8 10.5
VGS = 10 V, ID = 14A, TJ = 125°C 11 16
VGS = 10 V, ID = 11 A Q1 11 14.5
VGS = 4.5 V, ID = 10 A 12 16
VGS = 10 V, ID = 11, TJ = 125°C 16 23
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V Q2 50 A
VGS = 10 V, VDS = 5 V Q1 50
gFS Forward Transconductance VDS = 10 V, ID = 14 A Q2 67 S
VDS = 10 V, ID = 11 A Q1 48
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, Q2 2872 pF
f = 1.0 MHz Q1 1906
Coss Output Capacitance Q2 522 pF
Q1 311
Crss Reverse Transfer Capacitance Q2 186 pF
Q1 134
RG Gate Resistance VGS = 15 mVf = 1.0 MHz Q2 1.5 Ω
Q1 0.8
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, Q2 14 25 nS
VGS = 10V, RGEN = 6 Ω Q1 11 20
tr Turn-On Rise Time Q2 13 23 nS
Q1 13 23
td(off) Turn-Off Delay Time Q2 51 82 nS
Q1 28 45
tf Turn-Off Fall Time Q2 18 32 nS
Q1 15 27
Qg Total Gate Charge Q2 Q2 48 67 nC
VDS = 15 V, ID = 14A, VGS = 10 V Q1 33 46
Qgs Gate-Source Charge Q2 6 nC
Q1 Q1 4
Qgd Gate-Drain Charge VDS = 15 V, ID = 11A,VGS = 10 V Q2 8 nC
Q1 4

FDQ7238S Rev A1 (W)

 FDQ7238S
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q2 34 A
Q1 2.1
VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.4 A (Note 2) Q2 0.44 0.7 V
Voltage VGS = 0 V, IS = 1.9 A (Note 2) 0.37
VGS = 0 V, IS = 2.1 A (Note 2) Q1 0.7 1.2
trr Diode Reverse Recovery Time IF = 14A Q2 26 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs 22 nC
trr Diode Reverse Recovery Time IF = 11A Q1 25 nS
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 14 nC
NOTE :

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a) 68°C/W when c) 118°C/W when mounted

mounted on a 1in2 pad on a minimum pad of 2 oz
of 2 oz copper (Q1). copper (Q1).

b) 52°C/W when d) 94°C/W when mounted on

mounted on a 1in2 pad a minimum pad of 2 oz
of 2 oz copper (Q2). copper (Q2).

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDQ7238S Rev A1 (W)

 FDQ7238S
Typical Characteristics : Q2

60 2.2
VGS = 10V 3.0V

DRAIN-SOURCE ON-RESISTANCE
3.5V 2
50
6.0V 4.5V VGS = 2.5V
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
1.8
40 2.5V
1.6
30
3.0V
1.4
3.5V
20
1.2 4.5V
6.0V
10 1 10V

0 0.8
0 0.5 1 1.5 2 0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.024
ID = 14A ID = 7A
DRAIN-SOURCE ON-RESISTANCE

VGS =10V 0.022

1.6
RDS(ON), ON-RESISTANCE (OHM)

0.02
RDS(ON), NORMALIZED

1.4 0.018

0.016
1.2
0.014
TA = 125oC
1 0.012

0.01
0.8
0.008
TA = 25oC
0.6 0.006
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

70 100
VDS = 5V TA = -55oC 25oC
60
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

125oC 10
ID, DRAIN CURRENT (A)

50

TA = 125oC
40 1

30 25oC
0.1
20
-55oC
10 0.01

0
1 1.5 2 2.5 3 3.5 0.001
VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDQ7238S Rev A1 (W)

 FDQ7238S
Typical Characteristics : Q2

10 4000
f = 1MHz
ID = 14A VDS = 10V
VGS, GATE-SOURCE VOLTAGE (V)

CISS VGS = 0 V
15V
8 3200

CAPACITANCE (pF)
20V
6 2400

4 1600

COSS
2 800

CRSS
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50

100us
P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
1ms RθJA = 94°C/W
RDS(ON) LIMIT 40 TA = 25°C
10ms
ID, DRAIN CURRENT (A)

10
100ms
1s
10s 30
1 DC

20

VGS = 10V
0.1 SINGLE PULSE
10
RθJA = 94oC/W
TA = 25oC
0.01 0
0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJA(t) = r(t) * RθJA
0.2
RθJA = 94 °C/W
THERMAL RESISTANCE

0.1 0.1

0.05
P(pk
0.02
t1
0.01
0.01 t2

TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design

FDQ7238S Rev A1 (W)

 FDQ7244S
Typical Characteristics : Q2

SyncFET Schottky Body Diode

Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode Schottky barrier diodes exhibit significant leakage
exhibits similar characteristics to a discrete external at high temperature and high reverse voltage. This
Schottky diode in parallel with a MOSFET. Figure 12 will increase the power dissipated in the device.
shows the reverse recovery characteristic of the
FDQ7238S Q2.
0.1

IDSS, REVERSE LEAKAGE CURRENT (A)

o
TA = 125 C

0.01

o
TA = 100 C
CURRENT : 0.8A/div

0.001

o
TA = 25 C
0.0001

0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)

TIME : 12nS/div Figure 14. SyncFET body diode reverse

leakage versus drain-source voltage and
Figure 12. FDQ7238S SyncFET body diode temperature.
reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
CURRENT : 0.8A/div

TIME : 12.5nS/div

Figure 13. Non-SyncFET (FDS6644) body

diode reverse recovery characteristic.

FDQ7238S Rev A1 (W)

 FDQ7238S
Typical Characteristics : Q1

60 2.4
VGS = 10V 3.5V 3.0V

DRAIN-SOURCE ON-RESISTANCE
2.2
50 VGS = 2.5V
6.0V
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
4.5V
40
1.8

30 1.6
3.0V
2.5.V
1.4
20 3.5V
1.2 4.5V
6.0V
10 10V
1

0 0.8
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60

VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 0.036
ID = 11A ID = 5.5A
DRAIN-SOURCE ON-RESISTANCE

VGS = 10V 0.032

1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED

0.028
1.4
0.024
1.2 TA = 125oC
0.02
1
0.016

0.8
0.012
TA = 25oC
0.6
0.008
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 17. On-Resistance Variation with Figure 18. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.

60 100
VDS = 5V VGS = 0V
TA = -55oC 25oC
IS, REVERSE DRAIN CURRENT (A)

50 10
ID, DRAIN CURRENT (A)

125oC TA = 125oC
40 1

25oC
30 0.1
-55oC
0.01
20

0.001
10

0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
1 1.5 2 2.5 3 3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDQ7238S Rev A1 (W)

 FDQ7238S
Typical Characteristics : Q1

10 2400
f = 1MHz
ID = 11A VDS = 10V VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)

15V CISS
2000
8
20V

CAPACITANCE (pF)
1600
6
1200
4
800

COSS
2
400
CRSS
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 21. Gate Charge Characteristics. Figure 22. Capacitance Characteristics.

100 50

100µs P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE

RθJA = 118°C/W
RDS(ON) LIMIT 1ms 40
TA = 25°C
ID, DRAIN CURRENT (A)

10 10ms
100ms
1s 30
10s
1 DC

20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 118oC/W 10

TA = 25oC
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
R θJA(t) = r(t) * R θJA
0.2
THERMAL RESISTANCE

R θJA = 118 °C/W

0.1 0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2

SINGLE PULSE T J - T A = P * R θJA(t)

Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 25. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c
Transient thermal response will change depending on the circuit board design.

FDQ7238S Rev A1 (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ LittleFET™ Power247™ SuperSOT™-6
ActiveArray™ FAST MICROCOUPLER™ PowerTrench SuperSOT™-8
Bottomless™ FASTr™ MicroFET™ QFET SyncFET™
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E2CMOSTM I2C™ OCX™ RapidConnect™ UltraFET
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Across the board. Around the world.™ OPTOPLANAR™ SPM™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5
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