Review

MOSFET TRANSISTORS
DC and Small Signal analysis
 MOSFET

• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT

TRANSISTOR

• VOLTAGE - CONTROLLED DEVICE

• LOW POWER DISSIPATION

 MOSFET

METAL
OXIDE OXIDE OXIDE

SOURCE CHANNEL DRAIN

L
NMOSFET ENHANCEMENT MODE
DEVICE
-VS +VD
+VG

METAL
OXIDE OXIDE OXIDE

N TYPE SOURCE N TYPE DRAIN

DEPLETION LAYER DEPLETION LAYER

P TYPE SUBSTRATE

-VB
 MOSFET “ON” CONDITION

+VD
VG > VTN
ID

METAL
OXIDE OXIDE OXIDE

n+ n+
electrons

p
 MOSFET PARAMETERS

• iD – DRAIN CURRENT

• VTP,VTN – THRESHOLD VOLTAGE (VTH)

• vDS – DRAIN TO SOURCE VOLTAGE

• vGS – GATE TO SOURCE VOLTAGE

• vB – BULK VOLTAGE
 THRESHOLD VOLTAGE

• VOLTAGE REQUIRED TO CREATE AN INVERSION

LAYER OF CHARGE UNDER THE GATE OXIDE

• POSITIVE FOR n-CHANNEL DEVICES

• NEGATIVE FOR p-CHANNEL DEVICES

 BULK VOLTAGE

• LOWEST VOLTAGE AVAILABLE FOR NMOS (N-

CHANNEL) DEVICES

• HIGHEST VOLTAGE AVAILABLE FOR PMOS (P-

CHANNEL) DEVICES

• REVERSE-BIASES PN JUNCTIONS
 MOSFET CAPACITANCE

• POSITIVE OR NEGATIVE VOLTAGE AT GATE

TERMINAL INDUCES CHARGE ON GATE METAL

• CHARGE OF OPPOSITE TYPE ACCUMULATES IN

CHANNEL

• FORMS MOSFET CAPACITOR

 OXIDE CAPACITANCE
 ox
Cox 
tox

 ox  3.9 o

 o  8.85 10 14

F / cm
 PARAMETER DEFINITIONS

• n,p - ELECTRON OR HOLE MOBILITY

• ox – PERMITTIVITY OF OXIDE

• tox – OXIDE THICKNESS

• (W/L) – ASPECT RATIO

 MOSFET OPERATION

• SOURCE TERMINAL IS GROUNDED

• GATE AND DRAIN VOLTAGES REFERENCED TO

SOURCE VOLTAGE

• VOLTAGE IS APPLIED TO GATE TERMINAL TO

INDUCE CHARGE IN THE CHANNEL
 CHARGE FLOW

• CHARGE IS PULLED INTO CHANNEL FROM DRAIN

AND SOURCE REGIONS

• CHARGE FLOWS FROM SOURCE TO DRAIN AS

DRAIN VOLTAGE IS INCREASED
DEVELOPMENT OF MOSFET
EQUATIONS

dq  C ox Wdx v GS  vx   VTH 

dvx 
v DS   Ex   
dx

dx
velocity of channel charge 
dt
 DEVELOPMENT OF MOSFET
EQUATIONS
dx
velocity of channel charge 
dt

dq  dq  dx 
i  i    
dt  dx  dt 

dvx 
i D  i  i D  μ n C ox Wv GS  vx   VTH 
dx
 DEVELOPMENT OF MOSFET
EQUATIONS

dv x 
iD  i  iD   nCoxW vGS  v x   VTH 
dx

iD dx   nCoxW vGS  v x   VTH dv x 

L v DS

i
0
D dx    C W v
0
n ox GS  v x   VTH dv x 
 DEVELOPMENT OF MOSFET
EQUATIONS

W  1 2 
iD   nCox   vGS  VTH vDS  vDS 
L  2 

k n'   nCox

W  1 2 
iD  k   vGS  VTH vDS  vDS 
'
n
L  2 
 N-CHANNEL MOSFET EQUATIONS

vGS  VTH  iD  0

W  1 2 
vDS  vGS  VTH   iD  k 
'
n  vGS  VTH vDS  vDS 
L  2 

1 ' W 
vDS  vGS  VTH   iD  k n  vGS  VTH 
2

2 L
 MOSFET CHARACTERISTICS
ID
1.5mA

vGS3
1.0mA

vGS2

0.5mA

vGS1

0mA
0V 2V 4V 6V 8V 10V 12V

vDS
 TRANSCONDUCTANCE
PARAMETER COMPONENTS

• MOBILITY

• ELECTRIC PERMITTIVITY

• OXIDE THICKNESS

• ASPECT RATIO
TRANSCONDUCTANCE
PARAMETER PHYSICS

W 
K  k' 
L

  ox 
k '     k '  Cox
 tox 

 ox
Cox 
tox
n-CHANNEL MOSFET OPERATION IN
CUTOFF REGION

vGS  VTH

iD  0
n-CHANNEL MOSFET OPERATION IN
LINEAR REGION

vDS  vGS  VTH

 1 2
iD  K n vGS  VTH vDS  vDS 
 2 
n-CHANNEL MOSFET OPERATION IN
SATURATION REGION

vDS  vGS  VTH

iD  K n vGS  VTH 
1 2

2
p-CHANNEL MOSFET OPERATION IN
CUTOFF REGION

vSG  VTH

iD  0
p-CHANNEL MOSFET OPERATION IN
LINEAR REGION

vSD  vSG  VTH

 1 2
iD  K p vSG  VTH vSD  vSD 
 2 
p-CHANNEL MOSFET OPERATION IN
SATURATION REGION

vSD  vSG  VTH

iD  K p vSG  VTH 
1 2

2
NMOS INCREMENTAL RESISTANCE
IN THE LINEAR REGION

 1 2
iD  K n vGS  VTH vDS  vDS 
 2 

vDS  1  iD  K n vGS  VTH vDS

1 v DS small
 iD 
 rDS  K n VGS  VTH 
1
rDS   
 vDS  vGS VGS
PMOS INCREMENTAL RESISTANCE
IN THE LINEAR REGION

 1 2
iD  K p vSG  VTH vSD  vSD 
 2 

vDS  1  iD  K p vSG  VTH vSD

1 vSD small
 iD 
 rDS  K n VSD  VTH 
1
rSD   
 vSD  vSG VSG
 MODULATED CHANNEL IN
SATURATION REGION
VD>>VG
+VD
VG > VTN
ID

METAL
OXIDE OXIDE OXIDE

n+ n+

TAPERED CHANNEL
p
NMOS INCREMENTAL RESISTANCE
IN SATURATION REGION

iD  K n vGS  VTH  1  vDS 

1 2

1 1
 iD    Kn  2
rO     rO    VGS  VTH  
 vDS  vGS VGS
  2  

rO  I D 
1
PMOS INCREMENTAL RESISTANCE
IN SATURATION REGION

iD  K p vSG  VTH  1  vSD 

1 2

1 1
 iD    Kp  2
rO     rO    VSG  VTH  
 vSD  v SG VSG
  2  

rO  I D 
1
DEPENDENCE ON DRAIN VOLTAGE

1
rO 
λI D

λ  channel length modulation parameter

1 ' W
ID  k n VGS  VTH 2

2 L
PSPICE MOSFET SYMBOLS

p-channel enhancement n-channel enhancement

 NMOS LARGE SIGNAL MODEL

G G D

+
+
1 ' W
k n  VGS  VTH  VDS
2
VGS rO
2 L
-
-

S S
DEVELOPMENT OF MOSFET SMALL-
SIGNAL MODEL

vGS  VGS  vgs iD  I D  id

 TOTAL CURRENT AND VOLTAGE

1 'W
iD  k n
2 L

VGS  vgs   VTN 
2 1 'W
 iD  k n
2 L

VGS  VTH   vgs 
2

iD 
1 'W
kn
2 L

VGS  VTH 2  2VGS  VTH vgs  vgs2 
1 'W
v  1  iD  k n
2
gs
2 L

VGS  VTH 2  2VGS  VTH vgs 
COMPONENTS OF TOTAL CURRENT

iD  I D  id

iD  k n VGS  VTH   k n VGS  VTH v gs

1 'W 2 ' W

2 L L

id  k'
n
W
VGS  VTH vgs
L
MOSFET TRANSCONDUCTANCE

id  k'
n
W
VGS  VTH vgs
L

id
gm 
v gs

gm  k
W
VGS  VTH 
'
n
L
 ALTERNATIVE
TRANSCONDUCTANCE EQUATION

I D  k n VGS  VTH 
1 'W 2I D
 VGS  VTH 
2

2 L ' W
kn
L

gm  k'
n
W
VGS  VTH   g m  2kn I D
' W

L L
 SMALL-SIGNAL MODEL

id
g VCC d
+ +
gmvgs
vgs vds
rO
- -
s s