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2SA933AS PNP Transistor Specifications

This document provides specifications for the 2SA933AS transistor. It is a PNP transistor in a TO-92S package. Key specifications include a power dissipation of 0.2W at 25°C, a collector current of -0.15A, and an operating junction temperature range of -55°C to +150°C. Electrical characteristics are provided for parameters like collector-base breakdown voltage, collector-emitter breakdown voltage, and DC current gain.

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148 views1 page

2SA933AS PNP Transistor Specifications

This document provides specifications for the 2SA933AS transistor. It is a PNP transistor in a TO-92S package. Key specifications include a power dissipation of 0.2W at 25°C, a collector current of -0.15A, and an operating junction temperature range of -55°C to +150°C. Electrical characteristics are provided for parameters like collector-base breakdown voltage, collector-emitter breakdown voltage, and DC current gain.

Uploaded by

Vieira Bruno
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

RoHS

2SA933AS

2SA933AS TRANSISTOR (PNP) TO-92S

TD
,. L
1. EMITTER

FEATURES
2. COLLECTOR

O
Power dissipation
3. BASE
PCM : 0.2 W (Tamb=25℃)

C
Collector current 123
I CM : -0.15 A

IC
Collector-base voltage
V(BR)CBO : -60 V
Operating and storage junction temperature range

N
TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃


O
unless otherwise specified)

Parameter

Collector-base breakdown voltage

T R
Symbol

V(BR)CBO
Test conditions

Ic= -50µA , IE=0


MIN

-60
TYP MAX UNIT

C
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -50 V

E
Emitter-base breakdown voltage V(BR)EBO IE=- 50µA, IC=0 -6 V

L
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 µA

E
Emitter cut-off current IEBO VEB= -6V, IC=0 -0.1 µA

DC current gain

J
hFE VCE=-6 V, IC= -0.1A 120 560

Collector-emitter saturation voltage VCEsat IC= -50mA, IB=-5mA -0.5 V

E
VCE=-12V, IC=-2mA
Transition frequency fT 120 MHz

W
F=30MHz

CLASSIFICATION OF hFE
Rank Q R S

Range 120-270 180-390 270-560

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]

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