Transistor Model

Elektronika Dasar II

Setyawan P. Sakti
Laboratory of Sensor Technology
Department of Physics, Brawijaya University
Jl Veteran, Malang 65145, Indonesia
BJT Transistor Modeling
• A model is an equivalent circuit that represents the
AC characteristics of the transistor.
• A model uses circuit elements that approximate the
behavior of the transistor.
• Small signal transistor model :
– re model
– Hybrid equivalent model
The re Transistor Model
• BJTs are basically current-controlled devices;
therefore the re model uses a diode and a current
source to duplicate the behavior of the transistor.

• One disadvantage to this model is its sensitivity to

the DC level. This model is designed for specific
circuit conditions.
Common-Base Configuration

Input impedance:
26 mV
re = Zi = re
Ie

Output impedance:
Zo  

Voltage gain:
 RL RL
AV = 
re re

Current gain:
Ai = −  −1
 Common-Emitter Configuration

The diode re model

can be replaced by
the resistor re.

Ie = ( + 1) Ib  Ib

26 mV
re =
Ie
 Common-Emitter Configuration

Input impedance:
Z i =  re

Output impedance:
Zo = ro  

Voltage gain:
RL
AV = −
re

Current gain:
Ai =  ro =
 Common-Collector Configuration

Input impedance:
Zi = ( + 1)re

Output impedance:
Zo = re || RE

Voltage gain:
RE
AV =
RE + re

Current gain:
Ai = β + 1
 The Hybrid Equivalent Model
Hybrid parameters are developed and used for modeling the
transistor. These parameters can be found on a transistor’s
specification sheet:
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)  0
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
Simplified General h-Parameter Model

hi = input resistance
hf = forward transfer current ratio (Io/Ii)
 re vs. h-Parameter Model

Common-Emitter

hie = βre
hfe = βac

Common-Base

hib = re
hfb = −α  −1
 The Hybrid  Model

The hybrid pi model is most useful for analysis

of high-frequency transistor applications.
At lower frequencies the hybrid pi model closely
approximate the re parameters, and can be
replaced by them.
Common-Emitter Fixed-Bias Configuration

The input is applied to the base

The output is taken from the
collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180
Common-Emitter Fixed-Bias Configuration

AC equivalent

re,model
Common-Emitter Fixed-Bias Calculations

Zi = RB||β| e
Input
impedance: Zi  βre RE 10 βre
Io βRB ro
Ai = =
Current gain: I i (ro + RC )(RB + βre )
Zo = RC||rO
Output Ai  β ro 10 RC , R B 10 βre
impedance: Zo  RC ro 10 RC

Vo (R ||r )
Av = =− C o
Vi re Zi
Voltage gain: Current gain Ai = − AV
Av = −
RC from voltage gain: RC
ro 10 RC
re
Common-Emitter Voltage-Divider Bias

re model requires you to

determine , re, and ro.
Common-Emitter Voltage-Divider Bias
Calculations
Current gain
Io  R ro
Ai = =
I i (ro + RC )(R  + re )
I R 
Ai = o  r 10R
I i R  + re o C
Io
Input impedance Output impedance Ai =   ro 10RC , R 10 re
Ii
R  = R1 || R2 Zo = RC || ro Current gain from Av
Zi = R  || βre Zo  RC ro 10RC Zi
Ai = − Av
RC
Voltage gain
Vo − RC || ro
Av = =
Vi re
Vo R
Av = − C ro 10RC
Vi re
Common-Emitter Emitter-Bias Configuration
 Impedance Calculations

Input impedance:

Zi = RB || Zb
Zb = re + (  + 1)RE
Zb  (re + RE )
Z b   RE

Output impedance:
Zo = RC
 Gain Calculations

Voltage gain:
Vo R
Av = =− C
Vi Zb
Vo RC
Av = =− Z b =(re + RE )
Vi re + RE
Vo R
Av = − C Z b   RE
Vi RE

Current gain: Current gain from Av:

Io  RB Zi
Ai = = Ai = − Av
I i RB + Z b RC
 Emitter-Follower Configuration

This is also known as the common-collector configuration.

The input is applied to the base and the output is taken from the emitter.
There is no phase shift between input and output.
Impedance Calculations

Input impedance:

Zi = RB ||Z b
Zb = βre + (β + 1)RE
Zb  β(re + RE )
Zb  βRE

Zo = RE||re
Output impedance: Zo  re RE re
Gain Calculations

Voltage gain:
Vo RE
Av = =
Vi RE + re
Vo
Av = 1 RE re , R E + re  RE
Vi

Current gain:
βRB
Ai  −
RB + Zb
Zi
Current gain from voltage gain: Ai = − Av
RE
Common-Base Configuration

The input is applied to the emitter

The output is taken from the

collector

Low input impedance.

High output impedance

Current gain less than unity

Very high voltage gain

No phase shift between input

and output
Calculations

Input impedance:
Zi = RE || re

Output impedance:
Zo = RC

Voltage gain:
Vo RC RC
Av = = 
Vi re re

Current gain:
Io
Ai = = −  −1
Ii
Common-Emitter Collector Feedback
Configuration

• A variation of the common-emitter fixed-bias configuration

• Input is applied to the base
• Output is taken from the collector
• There is a 180 phase shift between the input and output
Calculations
re
Zi =
Input impedance: 1 RC
+
β RF

Output impedance: Zo  RC || RF

Vo R
Voltage gain: Av = =− C
Vi re

Current gain:
Io βRF
Ai = =
Ii RF + βRC
Io R
Ai =  F
Ii RC
Collector DC Feedback Configuration
This is a variation of the common-emitter,
fixed-bias configuration

• The input is applied to the base

• The output is taken from the
collector
• There is a 180 phase shift
between input and output
Calculations

Input impedance:
re
Zi =
1 RC
+
β RF

Output impedance:
Zo  RC||RF

Voltage gain: Io  RF
Ai = =
Ii RF +  RC
Av =
Vo R
=− C
Current gain: Io R
Vi re Ai =  F
Ii RC
Two-Port Systems Approach

With Vi set to 0 V:
ZTh = Zo = Ro

The voltage across

the open terminals is:
ETh = AvNLVi

where AvNL is the no-

load voltage gain
Effect of Load Impedance on Gain

• This model can be applied to any

current- or voltage-controlled
amplifier.
• Adding a load reduces the gain of
the amplifier:

Vo RL Zi
Av = = AvNL Ai = − Av
Vi RL + Ro RL
Effect of Source Impedance on Gain

The amplitude of the

applied signal that
reaches the input of
the amplifier is:
RiVs
Vi =
R i + Rs

The internal resistance of the signal source reduces the overall

gain:
Vo Ri
Avs = = AvNL
Vs Ri + Rs
Combined Effects of RS and RL on Voltage
Gain

Effects of RL:
Vo RL AvNL
Av = =
Vi RL + Ro
Ri
Ai = − Av
RL

Vo Ri RL
Avs = = AvNL
Vs Ri + Rs RL + Ro
Effects of RL and RS: Rs + Ri
Ais = − Avs
RL
Cascaded Systems
• The output of one amplifier is the input to the next
amplifier
• The overall voltage gain is determined by the product
of gains of the individual stages
• The DC bias circuits are isolated from each other by the
coupling capacitors
• The DC calculations are independent of the cascading
• The AC calculations for gain and impedance are
interdependent
R-C Coupled BJT Amplifiers

Voltage gain:
RC || R1 || R2 || Re
Av 1 =
re
RC
Av 2 =
re
Av = Av 1Av 2

Input impedance,
first stage:

Output impedance,
Zi = R1 || R2 || Re second stage: Zo = RC
Cascode Connection

• This example is a CE–CB

combination. This arrangement
provides high input impedance
but a low voltage gain.

• The low voltage gain of the input

stage reduces the Miller input
capacitance, making this
combination suitable for high-
frequency applications.
Darlington Connection

The Darlington circuit provides

very high current gain, equal to the
product of the individual current
gains:
D = 1 2

The practical significance is that

the circuit provides a very high
input impedance.
DC Bias of Darlington Circuits

Base current:
VCC − VBE
IB =
RB +  D R E

Emitter current:
IE = (D + 1)IB  DIB

Emitter voltage:
VE = IE RE

Base voltage:
VB = VE + VBE
Feedback Pair

This is a two-transistor circuit that operates like a Darlington

pair, but it is not a Darlington pair.

It has similar characteristics:

• High current gain
• Voltage gain near unity
• Low output impedance
• High input impedance

The difference is that a Darlington uses a pair of like

transistors, whereas the feedback-pair configuration uses
complementary transistors.
Current Mirror Circuits

Current mirror circuits provide constant

current in integrated circuits.
Current Source Circuits

Constant-current sources can be built using FETs, BJTs, and

combinations of these devices.

VZ − VBE
I  IE = IE  IC
RE
Current Source Circuits

VGS = 0V
ID = IDSS = 10 mA
Fixed-Bias

Input impedance:
Zi = RB || hie

Output impedance:
Zo = RC || 1/ hoe

Voltage gain:
Vo h (R || 1/ ho e ) Io
Av = = − fe C Ai =  hfe
Vi hie Current gain: Ii
Voltage-Divider Configuration

Input impedance:
Zi = R || hie

Output impedance:
Zo  RC

Voltage gain:
hfe (RC || 1/hoe )
Av = −
hie

hfe R 
Current gain: Ai = −
R  + hie
Emitter-Follower Configuration

Input impedance:
Zb = hfe RE Z b = h fe R E
Z i = R o || Z b
Zi = Ro || Zb

Output impedance:
hie
Zo  RE ||
hfe

Voltage gain: hfe RB

Ai =
Vo RE RB + Zb
Av = = Current gain:
Vi RE + hie / hfe Zi
Ai = − Av
RE
Common-Base Configuration

Input impedance:
Zi = RE || hib
Output impedance:
Zo = RC

Voltage gain:
Vo h R
Av = = − fb C
Vi hib

Current gain:
Io
Ai = = hfb  −1
Ii
Gambarkan Rangkaian Dalam Model
hybrid Transistor