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Assignment-II, Basic Electronics 1. The Circuit Shown Uses A Silicon Transistor Having

This document contains 9 questions regarding transistor circuits. Question 1 involves finding the mode of operation, output voltage, and minimum resistor value for a circuit using a BJT with βF = 100. Question 2 involves calculating a resistor value and current for circuits with βF = 49 and 150. Question 3 involves sketching transfer characteristics for a circuit with βF = 150. The remaining questions involve calculating voltages, currents, operating points, and/or resistor values for various transistor circuits given component values and β.

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Ranit Nath
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103 views4 pages

Assignment-II, Basic Electronics 1. The Circuit Shown Uses A Silicon Transistor Having

This document contains 9 questions regarding transistor circuits. Question 1 involves finding the mode of operation, output voltage, and minimum resistor value for a circuit using a BJT with βF = 100. Question 2 involves calculating a resistor value and current for circuits with βF = 49 and 150. Question 3 involves sketching transfer characteristics for a circuit with βF = 150. The remaining questions involve calculating voltages, currents, operating points, and/or resistor values for various transistor circuits given component values and β.

Uploaded by

Ranit Nath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Assignment-II, Basic Electronics

1. The circuit shown uses a silicon transistor having  F  100 . Find


(a) If the BJT is in cut off, saturation, or active mode
(b) V0 and
(c) The minimum value of RE for which the BJT operates in the active mode.
VCC=-10 V

RC=3 K

Vo
RB=7 K
Q1

VBB=3 V
RE=0.5 K

2. A transistor with  F  49 and negligible reverse saturation current is used in the following
circuits. The other parameter values are RC  2 K , RB  25 K , and VCC  12 V .
(a) Determine RF so that I E  2 mA and
(b) Using the value of RF in (a), determine I E for  F changed to 150.

3. The transistor in the following circuit has  F  150 and negligible reverse saturation
current. Sketch the transfer characteristics
(a) V01 vs. V BB and
(b) V02 vs. V BB
It is given that RC  5 k , RB  100 k , RE  2 k , VCC  9 V , and V EE  0 V . Clearly
indicate the regions of operation of the transistor.
4. Find out voltages at all nodes and current at all branches in the given circuits. Assume
β=100.

5. Determine the minimum value of current gain β required to put the transistor in saturation
when Vin = +5V. Assume, VBE(sat) = 0.8 V, VCE(sat) = 0.12 V

6. The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V.
(a) Find IC and voltage VCE, if β of transistor is 60.
(b) Find IC and VCE if β changes to 80.
What conclusions may be drawn?
7. Find out the operating point current ICQ, and voltage VCEQ in the circuit shown.
(VBE = 0.7 V, β of transistor is 200).

8. Calculate the approximate value for the base resistor RB which will forward bias the base
emitter junction of silicon transistor (β = 100) in the circuit. Consider Collector–emitter
(reverse biased) voltage VCE =2.5 V and VBE = 0.7V in forward bias.

9. The operating point values of current IC (=ICQ) and voltage VCE (=VCEQ) in the circuit have
magnitudes of 0.9 mA and 3.72 V respectively when the current gain β is 100. The transistor
in the circuit is replaced by another one with β = 200. Calculate the new values of ICQ and
VCEQ.

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