2SC4140

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
15.6±0.4 4.8±0.2

5.0±0.2
2.0
µA

1.8
VCBO 500 V ICBO VCB=500V 100max 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

19.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V

4.0
a ø3.2±0.1
IC 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30
b
IB 6 A VCE(sat) IC=10A, IB=2A 0.5max V
PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 165typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 1.4

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
200 20 10 10 –5 1 –2 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

18 1.4 18
1 .6 A
Base-Emitter Saturation Voltage V B E (s at) (V)

16 1.2 A 16

V B E (sat)

Collector Current I C (A)

Collector Current I C (A)

800 mA 1
12 12
Temp)
600mA –55˚C (Case

e Temp)
25˚C (Cas

)
400m A

mp

mp)
mp)
8 8

Te
)
Temp

e Te

e Te
(Case
p)

se
125˚C
em

(Ca

(Cas

(Cas
eT

˚C

200mA

˚C
25
as

25˚C
125
4

–55˚C
4
(C

C
I B =100mA 5˚
12 ˚C
V C E (sat) –55

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 18 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚C /W)

(V C E =4V)
50 10 2
t o n• t s tg • t f (µ s)

125˚C 5
t s tg
DC Cur rent Gain h FE

Transient Thermal Resistance

V C C 200V 1
25˚C I C :I B1 :–I B 2 =10:1:2

0.5
Switching Ti me

–55˚C 1

0.5 t on
10

tf
5 0.1 0.1
0.02 0.05 0.1 0.5 1 5 10 18 0.2 0.5 1 5 10 18 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
50 50 130
10
10 1m 0µ
ms s s
Maxim um Power Dissi pation P C (W)

DC
10 10
100
W
ith
Co lle ctor Cu rre nt I C ( A)

Collecto r Cur rent I C (A)

5 5
In
fin
ite
he
at

1 1
si
nk

0.5 0.5 50
Without Heatsink
Without Heatsink Natural Cooling
Natural Cooling L=3mH
IB2=–0.5A
0.1 0.1 Duty:less than 1%

0.05 0.05 Without Heatsink

3.5
0.03 0.03 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

93