TIP41, TIP41A, TIP41B,

TIP41C (NPN); TIP42, TIP42A,

TIP42B, TIP42C (PNP)

Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
Features COMPLEMENTARY SILICON
ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS
Human Body Model, 3B; > 8000 V
406080100 VOLTS,
Epoxy Meets UL 94 V0 @ 0.125 in
65 WATTS
PbFree Packages are Available*

MAXIMUM RATINGS MARKING

Rating Symbol Value Unit
DIAGRAM

CollectorEmitter Voltage TIP41, TIP42 VCEO 40 Vdc 4

TIP41A, TIP42A 60
TIP41B, TIP42B 80
TIP41C, TIP42C 100
CollectorBase Voltage TIP41, TIP42 VCB 40 Vdc TO220AB
CASE 221A TIP4xxG
TIP41A, TIP42A 60
TIP41B, TIP42B 80 STYLE 1 AYWW
TIP41C, TIP42C 100 1
2
3
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous IC 6.0 Adc
Peak 10
TIP4xx = Device Code
Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C
Total Power Dissipation @ TC = 25C PD 65 W 2, 2A, 2B, 2C
Derate above 25C 0.52 W/C A = Assembly Location
Y = Year
Total Power Dissipation @ TA = 25C PD 2.0 W WW = Work Week
Derate above 25C 0.016 W/C G = PbFree Package
Unclamped Inductive Load Energy E 62.5 mJ
(Note 1)
Operating and Storage Junction, TJ, Tstg 65 to C ORDERING INFORMATION
Temperature Range +150 See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 1.67 C/W
Thermal Resistance, JunctiontoAmbient RqJA 57 C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

September, 2005 Rev. 6 TIP41A/D
 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2) TIP41, TIP42 VCEO(sus) 40 Vdc
(IC = 30 mAdc, IB = 0) TIP41A, TIP42A 60
TIP41B, TIP42B 80
TIP41C, TIP42C 100
Collector Cutoff Current ICEO mAdc
(VCE = 30 Vdc, IB = 0) TIP41, TIP41A, TIP42, TIP42A 0.7
(VCE = 60 Vdc, IB = 0) TIP41B, TIP41C, TIP42B, TIP42C 0.7
Collector Cutoff Current ICES mAdc
(VCE = 40 Vdc, VEB = 0) TIP41, TIP42 400
(VCE = 60 Vdc, VEB = 0) TIP41A, TIP42A 400
(VCE = 80 Vdc, VEB = 0) TIP41B, TIP42B 400
(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C 400
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) hFE 30
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 15 75
CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) 1.5 Vdc
BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) 2.0 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION
Device Package Shipping
TIP41 TO220 50 Units / Rail
TIP41G TO220 50 Units / Rail
(PbFree)
TIP41A TO220 50 Units / Rail
TIP41AG TO220 50 Units / Rail
(PbFree)
TIP41B TO220 50 Units / Rail
TIP41BG TO220 50 Units / Rail
(PbFree)
TIP41C TO220 50 Units / Rail
TIP41CG TO220 50 Units / Rail
(PbFree)
TIP42 TO220 50 Units / Rail
TIP42G TO220 50 Units / Rail
(PbFree)
TIP42A TO220 50 Units / Rail
TIP42AG TO220 50 Units / Rail
(PbFree)
TIP42B TO220 50 Units / Rail
TIP42BG TO220 50 Units / Rail
(PbFree)
TIP42C TO220 50 Units / Rail
TIP42CG TO220 50 Units / Rail
(PbFree)

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (C)

Figure 1. Power Derating

VCC
2.0
+30 V

1.0 TJ = 25C
25 ms RC VCC = 30 V
0.7
+11 V SCOPE IC/IB = 10
0.5
RB
t, TIME (s)

0 0.3

tr
9.0 V 0.2
D1
tr, tf 10 ns 0.1
DUTY CYCLE = 1.0% 4 V 0.07 td @ VBE(off) 5.0 V
0.05
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
D1 MUST BE FAST RECOVERY TYPE, e.g.: 0.02
1N5825 USED ABOVE IB 100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0
MSD6100 USED BELOW IB 100 mA IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3. TurnOn Time

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0

0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05
RqJC = 1.92C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

0.5ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

5.0
breakdown. Safe operating area curves indicate IC VCE
1.0ms limits of the transistor that must be observed for reliable
3.0 TJ = 150C
2.0 CURVES APPLY BELOW RATED VCEO operation; i.e., the transistor must not be subjected to greater
SECONDARY BREAKDOWN LTD 5.0ms
dissipation than the curves indicate.
1.0 BONDING WIRE LTD The data of Figure 5 is based on T J(pk) = 150_C; TC is
THERMAL LIMITATION @ TC = 25C variable depending on conditions. Second breakdown pulse
0.5 (SINGLE PULSE) limits are valid for duty cycles to 10% provided T J(pk)
0.3 TIP41, TIP42 v 150_C. T J(pk) may be calculated from the data in
0.2 TIP41A, TIP42A Figure 4. At high case temperatures, thermal limitations will
TIP41B, TIP42B
TIP41C, TIP42C reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 40 60 80 100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 5. ActiveRegion Safe Operating Area

5.0 300

3.0 TJ = 25C TJ = 25C

2.0 VCC = 30 V 200
IC/IB = 10
C, CAPACITANCE (pF)

ts
1.0 IB1 = IB2
Cib
t, TIME (s)

0.7

0.5 100

0.3 70
0.2 tf Cob

50
0.1
0.07
0.05 30
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. TurnOff Time Figure 7. Capacitance

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

500 2.0

300 VCE = 2.0 V TJ = 25C

200 TJ = 150C 1.6
hFE , DC CURRENT GAIN

100
25C 1.2 IC = 1.0 A 2.5 A 5.0 A
70
50

30 0.8
20 55 C

0.4
10
7.0
5.0 0
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 4.0 6.0 10 20 30 50 100 200 300 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

2.0 +2.5

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C +2.0 *APPLIES FOR IC/IB hFE/4
1.6 +1.5
V, VOLTAGE (VOLTS)

+1.0
1.2 +0.5 +25 C to +150C
* qVC FOR VCE(sat)
0
VBE(sat) @ IC/IB = 10 55 C to +25C
0.8 0.5
+25 C to +150C
VBE @ VCE = 4.0 V 1.0
0.4 1.5 qVB FOR VBE
VCE(sat) @ IC/IB = 10 2.0 55 C to +25C
0 2.5
0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

103 10M
VCE = 30 V VCE = 30 V
102
IC, COLLECTOR CURRENT (A)

1.0M IC = 10 x ICES

TJ = 150C
101 100C IC ICES
25C 100k
100

10k
101 IC = ICES IC = 2 x ICES

102 REVERSE FORWARD 1.0k (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
103 0.1k
0.3 0.2 0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 20 40 60 80 100 120 140 160
VBE, BASEEMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance

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 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

PACKAGE DIMENSIONS

TO220
CASE 221A09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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