2SK3568

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3568
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.4 (typ.)

High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Drain-gate voltage (RGS = 20 k) VDGR 500 V
Gate-source voltage VGSS 30 V
DC (Note 1) ID 12
Drain current Pulse (t = 1 ms) A
IDP 48
(Note 1)
1: Gate
Drain power dissipation (Tc = 25C) PD 40 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 364 mJ
(Note 2)
Avalanche current IAR 12 A
JEDEC
Repetitive avalanche energy (Note 3) EAR 4 mJ
JEITA SC-67
Channel temperature Tch 150 C
TOSHIBA 2-10U1B
Storage temperature range Tstg -55~150 C
Weight : 1.7 g (typ.)

Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.125 C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 4.3 mH, IAR = 12 A, RG = 25 1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 25 V, VDS = 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG = 10 A, VDS = 0 V 30 V
Drain cut-off current IDSS VDS = 500 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6 A 0.4 0.52
Forward transfer admittance Yfs VDS = 10 V, ID = 6 A 3.5 8.5 S
Input capacitance Ciss 1500
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 15 pF

Output capacitance Coss 180

10 V ID = 6 A VOUT
Rise time tr VGS 22
0V
Turn-on time ton RL = 50
50
Switching time 33 ns
Fall time tf 36
VDD
200 V

Turn-off time toff Duty <

= 1%, tw = 10 s 170

Total gate charge Qg 42

Gate-source charge Qgs VDD
400 V, VGS = 10 V, ID = 12 A 23 nC

Gate-drain charge Qgd 19

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR 12 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP 48 A
Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V 1.7 V

Reverse recovery time trr IDR = 12 A, VGS = 0 V, 1200 ns

Reverse recovery charge Qrr dIDR/dt = 100 A/s 16 C

Marking

K3568 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID VDS ID VDS
12 24
5.2 8 COMMON SOURCE
5 10,15
10,15 6 Tc = 25C
10 20 PULSE TEST

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

COMMON SOURCE 5.5

Tc = 25C
8 PULSE TEST 16
5.2
4.75
6 12 5

4.75
4 4.5 8

4.5
2 4.25 4
VGS = 4 V
VGS = 4V
0 0
0 2 4 6 8 10 12 0 10 20 30 40 50 60

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

24 12
VDS (V)
COMMON SOURCE
COMMON SOURCE
Tc = 25
20 VDS = 20 V 10
DRAIN CURRENT ID (A)

PULSE TEST
PULSE TEST
DRAIN-SOURCE VOLTAGE

16 8

ID = 12 A
12 6

8 4
100 Tc = 55C 6

4 3
25 2

0 0
0 2 4 6 8 10 12 0 4 8 12 16 20 24

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = 25C
PULSE TEST
Tc = 55C

10
RDS (ON) (m)

25
Yfs (S)

100
1
VGS = 10 V15V

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) Tc IDR VDS

2.5 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

DRAIN REVERSE CURRENT IDR

PULSE TEST Tc = 25C
2.0 PULSE TEST
RDS (ON) (m )

10
6
ID = 12A

(A)
6
4
1
3
VGS = 10 V 10
2 5
3
1 VGS = 0, 1 V
0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2

CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE VDS Vth Tc

10000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

1000
CAPACITANCE C

Coss 3
Vth (V)

100

2
Crss
COMMON SOURCE
10 COMMON SOURCE VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25C PULSE TEST
1 0
0.1 1 10 100 80 40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT / OUTPUT

PD Tc CHARACTERISTICS
50 500 20
VDS (V)

GATE-SOURCE VOLTAGE VGS (V)

DRAIN POWER DISSIPATION

40 400 16
VDS
VDD = 100 V
DRAIN-SOURCE VOLTAGE

30 300 12
PD (W)

400

20 200 8
200
COMMON SOURCE
VGS
10 ID = 12 A
100 4
Tc = 25C
PULSE TEST
0 0 0
0 40 80 120 160 0 10 20 30 40 50 60

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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rth tw
10

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
1 Duty=0.5

0.2

0.1
0.1
0.05
PDM
0.02
t
SINGLE PULSE
0.01 0.01
T

Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10 100 1 10 100 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100 500
ID max (PULSED) *

100 s *
400
AVALANCHE ENERGY

ID max (CONTINUOUS) *
DRAIN CURRENT ID (A)

10
EAS (mJ)

1 ms * 300

1 ms *
200
DC OPERATION
1 Tc = 25C

100

0
25 50 75 100 125 150
SINGLE NONREPETITIVE PULSE
Tc=25 CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED Tch (C)
LINEARLY WITH INCREASE IN
TEMPERATURE. VDSS max
0.01 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
15 V
VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 83mH 2 B V
VDSS DD

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RESTRICTIONS ON PRODUCT USE 030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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