MASS ACTION LAW:
Let pi be the hole density in an intrinsic semiconductor.
Let ni be the electron density in intrinsic semiconductor.
In an intrinsic semiconductor
pi = ni -(1.1)
(Since electrons and holes are generated in pairs)
Consider an N-type semiconductor
Let n be the free electron density per cubic cm.
ni=pi
np=nipi (in intrinsic semiconductor)-(1.11)
ni=pi=ni
sub in eqn(1.11)
np=ni -(1.2)
In N-type semiconductor
A pentavalent impurity is called a donor atom because every atom donates a free electron.
Let be the donor atoms added to N-type semiconductor.
In n-type semiconductor
- +ve ion.
n - -ve electrons.(majority carriers)
P - +ve holes.(minority carriers)
The crystal has a hole which is electrically neutral and so the positive charge= negative
charge.
Hence,
n=p+ -(1.3)
In P-type semiconductor
Let be the acceptor atoms added to P-type semiconductor.
In p-type semiconductor
- -ve ion.
p - +ve holes (majority carriers)
n - -ve electrons(minority carriers)
p=n+ -(1.4)
Let there be donor and acceptor in impurities. To maintain charge neutrality the total no of
holes(p) should be equal to total no of electrons(n).
Hence,
p=n
combining (1.3)&(1.4)
+p= +n (1.5)
MOBILITY AND CONDUCTIVITY:
Let v be drift velocity in m/sec.
Drift current is directed motion of charge carriers under the influence of electric field.
Let J be current density in Amp/m.
V=E (1.6)
Unit of electric field is v/m.
is the mobility of electrons in squaremtr/sec.
J=neV (1.7)
Sub (1.6) in (1.7)
J=neE (1.8)
Where,
=ne -(1.9)
(sigma) is conductivity of metal in m
J=E (1.10)
Multiplying both side by E
JE=E
FERMI DIRAC FUNCTION:
Fermi level is the highest energy level that an electron can occupy at 0K
1
F(E)= 1+exp ( e ef )
kt
Where,
K is boltzmann constant in eVK1
E is electric field
F is Fermi Level
F(E) is Fermi dirac function
T is temperature in K
F(E) is probability of that stage will be occupied or not by a electron.
Ec is the lowest energy level in the conduction band.
Ev is the highest energy level in the valance band.
In N-type semiconductor:
Let dne be the no of conduction electrons per cm whose energy lies between E&E+dE.
Hence,
Dne=F(E)N(E) (1.11)
Where,
N(E) be no of states.
F(E) be probability of electrons being in that state.
N(E)= E
is constant where
= 4 / h3 (2m)3/2 (1.6x10-19)3/2 (1.13)
where ,
E is energy level.
M is mass of electron.
H is planks constant.
Hence,
n = N(E) f(E) dE
EC
1
( EEc ) 1/2 ef
dE
= EC
1+exp ( e )
kt
1
4 /h 3(2 m)3 /2(1.6 x 1019)3 /2 ( EEc ) 1/2 ef
dE
n = EC
1+exp ( e )
kt
Let (E-Ec)1/2=(kt)x
Assuming;
E>>Ef
EF
exp ( E ) is greater than 1.
kt
1
( EEf )
EC
1+exp E (
kt ) exp Kt
( EEf )
n=Nc exp Kt -(1.15)
When,
E=Ec
( EcEf )
n=Nc exp Kt -(1.16)
where,
2 mnkt
Nc=2( h ) (1.6 x 1019)3/2
Where,
Nc is number of states in conduction band.
K = (1.6 x 1019) 3/2
Number of holes in valance band:
N(E)(Ev-E)1/2 (1.18)
EvE in (1.18)
Probability of that state is filled with hole is (1-F(E))
Ev
1
( EvE ) 1/2 ef
dE
P=
1+exp ( e )
kt
( Ef Ev)
P=Nv exp( kt ) (1.19)
Fermi level in an intrinsic semiconductor:
In an intrinsic semiconductor no of electrons is equal to number of holes.
Equating(1.16)&(1.19)
( EcEf ) ( Ef Ev)
Nc exp( kt ) =Nv exp( kt )
By taking natural logarithm
Nc ( EcEf )/(Ef Ev)
ln Nv =ln[exp( kt )]
Nc
kt ln (EcEf )( Ef Ev )
Nv =
=-2Ef+Ev+Ec
Nc
+2Ef=Ev+Ec-kt ln Nv
Divide above equation by 2.
Ec + Ev Nc
Ef= 2 -kt/2 ln Nv -(1.20)
If Nc=Nv it satisfies that Fermi level is in the middle.
From(1.2)
np=ni
sub(1.6)&(1.19) in (1.20)
( EcEf ) ( Ef Ev)
Nc exp( kt )* Nv exp( kt )=ni
( EcEv )
Nc Nv exp[ kt =ni
ni=NcNv exp(-EG/kt) (1.21)
CHARGE DENSITY OF SEMICONDUCTOR:
From (1.5)
+p= +n
Consider a N-type semiconductor
In N-type =0
n>>p
equation (1.15) becomes
n (1.22)
Let Nn be the concentration of electrons in an N-type semiconductor.
Pn be the concentration of holes in N-type semiconductor.
np be the concentration of electrons in a P-type semiconductor.
pp be the concentration of holes in an P-type semi conductor.
Equation (1.22) will change to
nn= -(1.2a)
sub(1.22)in(1.2a)
pn nn=pn =ni
2
ni
pn= -(1.23)
therefore,
np= -(1.24)
Fermi level in semiconductors having impurities:
N-type
We have from equation (1.16)
( EcEf )
n= Nc exp( kt )
From equation (1.22)
( EcEf )
= Nc exp( kt ) (1.23)
( EcEf ) Nc
exp( kt )= -(1.24)
Nc
kt ln =ln exp[(Ec-Ef)]
( EcEf ) Nc
kt =ln n[ ]
Nc
Ef=Ec-kt ln n[ (1.25)
P-type Ef with more impurities
We have the equation (1.19)
( Ef Ev)
P=Nv exp ( kt )
From equation (1.5)
Nv+e=Na+n
Consider p type semiconductor
=0 holes >> electrons
p
Substituting eqn in (1.19)
( Ef Ev)
= Nv exp ( kt )
Nv ( Ef Ev)
=exp( kt )
Apply ln on both sides
Nv ( Ef Ev)
ln=ln exp( kt )
Nv
Ef=ln [ ] kt+Ev-(1.26)
DIFFUSION:
It is the measurement of substance from a region of higher concentration to the region
of lower concentration.
The concentration of holes decreases with distance.
Let, Ip Diffusion hole current density in amp/m.
And is propotion to concentration gradient.
Dp Be the diffusion constant for hole in m/sec (sq1 sec)
Jp -eADp dp/dx (1.27)
Ip -eADp dp/dx (1.28)
Where, I is current.
Jn = eDn dn/dx (1.29)
In = eADn dn/dx (1.30)
Einsteins equation :
Dp/p = Dn/n = Vt (1.31)
Vt Volt equivalent of temperature.
Vt= Kt/q
EXCESS CARRIER EFFECT:
Let Pno, Nno be the equilibrium concentration of holes and electrons in n-type semi
conductor.
Pn and Nn They are the total concentration of holes and electrons in a n-type
semiconductor.
Let the n-type bar be the illuminating.
So many carriers are generated these carriers are called excess carriers.
Let Po, N0 be the carrier concentration during steady indication.
Let the light be turned off
Pno & Nno remains due to recombination.
Pn-Pno = (Po-Pno)e-t/ (1.33)
As t increases e-t/ decreases. So, Pn-Pno also decreses.
nn-nno = (nno-Nno) e-t/ (1.34)
The life time is time for which carrier exist befor RECOMBINATION.
Dpn/dt = -(Pn-Pno)/ (1.35)
=d/dt(pn-Pno) (1.36)
Jn=en nE+e Dn dn/dx (1.37)
Where n is mobility of electrons.
Jp=epPE-eDp dp/dx (1.38)
Ip= eAp PE-eADp dp/dx (1.39)
