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Transistor Common - Base Configuration

The document describes an experiment to observe the input and output characteristics of a transistor connected in common base configuration and determine its alpha (α). Key steps include: 1. Connecting a transistor in a common base circuit and applying varying voltages across the emitter-base and collector-base junctions. 2. Measuring the resulting currents and recording input and output characteristics graphs with IE vs VEB and IC vs VCB. 3. Calculating α as the ratio of change in collector current to change in emitter current from the input characteristics graph.

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Sunitha Jadhav
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535 views5 pages

Transistor Common - Base Configuration

The document describes an experiment to observe the input and output characteristics of a transistor connected in common base configuration and determine its alpha (α). Key steps include: 1. Connecting a transistor in a common base circuit and applying varying voltages across the emitter-base and collector-base junctions. 2. Measuring the resulting currents and recording input and output characteristics graphs with IE vs VEB and IC vs VCB. 3. Calculating α as the ratio of change in collector current to change in emitter current from the input characteristics graph.

Uploaded by

Sunitha Jadhav
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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TRANSISTOR COMMON -BASE CONFIGURATION

AIM: 1.To observe and draw the input and output characteristics of a transistor
connected in common base configuration.
2. To find of the given transistor.
APPARATUS:

Transistor, BC 107
Regulated power supply (0-30V, 1A)
Voltmeter (0-20V)
Ammeters (0-100mA)
Resistor, 1000
Bread board
Connecting wires

THEORY:
A transistor is a three terminal active device. T he terminals are emitter, base,
collector. In CB configuration, the base is common to both input (emitter) and output
(collector). For normal operation, the E-B junction is forward biased and C-B junction
is reverse biased.
In CB configuration, IE is +ve, IC is ve and IB is ve. So,
VEB=f1 (VCB,IE) and
IC=f2 (VCB,IB)
With an increasing the reverse collector voltage, the space-charge width at
the output junction increases and the effective base width W decreases. This
phenomenon is known as Early effect. Then, there will be less chance for
recombination within the base region. With increase of charge gradient with in the
base region, the current of minority carriers injected across the emitter junction
increases.The current amplification factor of CB configuration is given by,
= IC/ IE
CIRCUIT DIAGRAM

PROCEDURE:
INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage V CE is kept constant at 0V
and for different values of VEB note down the values of IE.
3. Repeat the above step keeping V CB at 2V, 4V, and 6V.All the readings are
tabulated.
4. A graph is drawn between VEB and IE for constant VCB.
OUTPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input I E iskept constant at 10m A and for
different values of VCB, note down the values of IC.
3. Repeat the above step for the values of IE at 20 mA, 40 mA, and 60 mA, all the
readings are tabulated.
4. A graph is drawn between VCB and Ic for constant IE
OBSERVATIONS:
INPUT CHARACTERISTICS:
S.No

VCB=0V

VCB=1V

VCB=2V

VEB(V)

IE(mA)

VEB(V)

IE(mA)

VEB(V)

IE(mA)

OUTPUT CHARACTERISTICS:
IE=10mA

IE=20mA

IE=30mA

S.No
VCB(V)

IC(mA)

VCB(V)

IC(mA)

VCB(V)

IC(mA)

MODEL GRAPHS:
INPUT CHARACTERISTICS

OUTPUT CHARACTERISTICS

PRECAUTIONS:
1. The supply voltages should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.
RESULT:
1. The input and output characteristics of the transistor are drawn.
2. The of the given transistor is calculated.

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