IRF9520, SiHF9520

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

- 100

RDS(on) ()

VGS = - 10 V

0.60

Qg (Max.) (nC)

18

Qgs (nC)

3.0

Qgd (nC)

9.0

Configuration

Single
S

Dynamic dV/dt Rating

Repetitive Avalanche Rated
P-Channel
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

TO-220AB

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
D
P-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF9520PbF
SiHF9520-E3
IRF9520
SiHF9520

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

- 100

Gate-Source Voltage

VGS

20

Continuous Drain Current

Pulsed Drain

VGS at - 10 V

TC = 25 C
TC = 100 C

Currenta

ID
IDM

Linear Derating Factor

UNIT
V

- 6.8
- 4.8

- 27
0.40

W/C
mJ

Single Pulse Avalanche Energyb

EAS

300

Repetitive Avalanche Currenta

IAR

- 6.8

Repetitive Avalanche Energya

EAR

6.0

mJ

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

60

dV/dt

- 5.5

V/ns

TJ, Tstg

- 55 to + 175
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 C, L = 9.7 mH, Rg = 25 , IAS = - 6.8 A (see fig. 12).
c. ISD - 6.8 A, dI/dt 110 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91074
S11-0512-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

2.5

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = - 250 A

- 100

VDS/TJ

Reference to 25 C, ID = - 1 mA

- 0.10

V/C

VGS(th)

VDS = VGS, ID = - 250 A

- 2.0

- 4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

- 100

VDS = - 80 V, VGS = 0 V, TJ = 150 C

- 500

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)
gfs

ID = - 4.1 Ab

VGS = - 10 V

VDS = - 50 V, ID = - 4.1 Ab

0.60

2.0

390

170

45

18

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

3.0

Gate-Drain Charge

Qgd

9.0

Turn-On Delay Time

td(on)

9.6

tr

29

21

25

4.5

Rise Time
Turn-Off Delay Time

td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5

VGS = - 10 V

ID = - 6.8 A, VDS = - 80 V,
see fig. 6 and 13b

VDD = - 50 V, ID = - 6.8 A,
Rg = 18 , RD = 7.1, see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

pF

nC

ns

nH

7.5

- 6.8

- 27

- 6.3

98

200

ns

0.33

0.66

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage

IS
ISM
VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = - 6.8 A, VGS = 0

Vb

TJ = 25 C, IF = - 6.8 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

101

VGS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V

100

100

- 4.5 V

101

175 C

20 s Pulse Width
TC = 25 C

- ID, Drain Current (A)

- 4.5 V

100
20 s Pulse Width
TC = 175 C
100
91074_02

101

- VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
Top

- VGS, Gate-to-Source Voltage (V)

91074_03

Fig. 1 - Typical Output Characteristics, TC = 25 C

101

20 s Pulse Width
VDS = - 50 V

100

101

- VDS, Drain-to-Source Voltage (V)

91074_01

- ID, Drain Current (A)

- ID, Drain Current (A)

25 C

91074_04

3.0
2.5

ID = - 6.8 A
VGS = - 10 V

2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520

900

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

750
600
450

Ciss

300

Coss

150

Crss

- ISD, Reverse Drain Current (A)

Vishay Siliconix

175 C

100

25 C

VGS = 0 V

10-1

0
100

1.0

101

- VDS, Drain-to-Source Voltage (V)

91074_05

20

- ID, Drain Current (A)

VDS = - 20 V

4
For test circuit
see figure 13

0
0
91074_06

12

16

QG, Total Gate Charge (nC)

102
5

100 s
10
5

1
91074_08

1 ms

TC = 25 C
TJ = 175 C
Single Pulse

20

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Operation in this area limited

by RDS(on)

VDS = - 80 V
VDS = - 50 V

5.0

4.0

- VSD, Source-to-Drain Voltage (V)

103

16

3.0

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = - 6.8 A

12

2.0

91074_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

- VGS, Gate-to-Source Voltage (V)

101

10

10 ms
5

102

103

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520
Vishay Siliconix

RD
VDS
VGS

7.0

D.U.T.

RG

+VDD

- ID, Drain Current (A)

6.0
5.0

- 10 V
Pulse width 1 s
Duty factor 0.1 %

4.0
3.0

Fig. 10a - Switching Time Test Circuit

2.0
1.0

td(on)

td(off) tf

tr

VGS
0.0
25

50

75

100

125

150

10 %

175

TC, Case Temperature (C)

91074_09

90 %
VDS

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

D = 0.5
0.2
PDM

0.1
0.05
0.1

0.02
0.01

10-2
10-5
91074_11

t1
t2

Single Pulse
(Thermal Response)

10-4

10-3

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2

0.1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

www.vishay.com
5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520
Vishay Siliconix

L
Vary tp to obtain
required IAS

IAS

VDS

VDS

D.U.T

RG

+ V DD
VDD

IAS
tp

- 10 V
0.01

tp

VDS
Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

1000

ID
- 2.8 A
- 4.8 A
Bottom - 6.8 A
Top

800

600

400

200

VDD = - 25 V
25

91074_12c

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

- 10 V

12 V

0.2 F
0.3 F

QGS

QGD
D.U.T.

VG

+ VDS

VGS
- 3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9520, SiHF9520
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Note
Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91074.

Document Number: 91074

S11-0512-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
A

DIM.

Q
H(1)
D

L(1)

M*

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

4.24

4.65

0.167

0.183

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
P

MILLIMETERS

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xian

Document Number: 66542

1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Revision: 13-Jun-16

Document Number: 91000