2SK2882
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (L2--MOSV)
2SK2882
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.08 (typ.)
High forward transfer admittance: |Yfs| = 17 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 150 V)
Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
150
Drain-gate voltage (RGS = 20 k)
VDGR
150
Gate-source voltage
VGSS
20
(Note 1)
ID
18
Pulse (Note 1)
IDP
54
Drain power dissipation (Tc = 25C)
PD
45
Single pulse avalanche energy
(Note 2)
EAS
176
mJ
Avalanche current
IAR
18
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
55~150
DC
Drain current
JEDEC
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 50 V, Tch = 25C (initial), L = 0.8 mH, RG = 25 , IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
2006-11-20
2SK2882
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 16 V, VDS = 0 V
10
Drain cut-off current
IDSS
VDS = 150 V, VGS = 0 V
100
ID = 10 mA, VGS = 0 V
150
V
V
Drain-source breakdown voltage
V (BR) DSS
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
Yfs
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, ID = 1 mA
0.8
2.0
VGS = 4 V, ID = 9 A
0.09
0.18
VGS = 10 V, ID = 9 A
0.08
0.12
VDS = 10 V, ID = 9 A
10
17
1380
pF
200
pF
610
pF
12
24
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ID = 9 A
10 V
VGS
ton
Fall time
4.7
Switching time
tf
Turn-off time
toff
Total gate charge
VOUT
RL = 11
Turn-on time
0V
VDD
100 V
Duty <
= 1%, tw = 10 s
Qg
(gate-source plus gate-drain)
Gate-source charge
Qgs
Gate-drain (miller) charge
Qgd
VDD
120 V, VGS = 10 V, ID = 18 A
ns
56
130
57
nC
43
nC
14
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
18
IDRP
54
1.7
VDSF
IDR = 18 A, VGS = 0 V
Reverse recovery time
trr
IDR = 18 A, VGS = 0 V
185
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/s
1.3
Marking
K2882
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-20
2SK2882
ID VDS
20
40
10
Drain current ID (A)
Drain current ID (A)
16
Common source
Tc = 25C
Pulse test
3.8
ID VDS
50
3.5
12
3.2
8
VGS = 3 V
4
Common source
Tc = 25C
Pulse test
10
4.5
30
20
3.5
10
3
VGS = 2.5 V
0
0
Drain-source voltage
0
0
VDS (V)
Drain-source voltage
ID VGS
10
VDS (V)
VDS VGS
30
4
Common source
Common source
Tc = 25C
VDS (V)
Pulse test
20
Drain-source voltage
Drain current ID (A)
VDS = 10 V
Tc = 55C
10
100
25
Pulse test
3
2
ID = 18 A
1
9
3
0
0
Gate-source voltage
0
0
VGS (V)
10
Gate-source voltage
12
VGS (V)
Yfs ID
30
Common source
VDS = 10 V
Pulse test
RDS (ON) ID
Tc = 55C
1000
25
Common source
100
Drain-source ON resistance
RDS (ON) (m)
Forward transfer admittance Yfs
(S)
50
10
5
3
1
1
10
30
50
500
Tc = 25C
300
Pulse test
Drain current ID (A)
VGS = 10 V
50
30
10
0.1
100
100
0.3 0.5
10
30
50
Drain current ID (A)
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2SK2882
RDS (ON) Tc
IDR VDS
100
200
Common source
Common source
(A)
160
ID = 18 A
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (m)
Pulse test
120
4.5
80
40
0
80
40
40
80
120
50
Tc = 25C
Pulse test
30
10
10
5
3
VGS = 0, 1 V
1
1
0
160
0.4
Case temperature Tc (C)
0.8
1.2
Drain-source voltage
Capacitance VDS
VDS (V)
Vth Tc
4
5000
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Vth (V)
3000
500
300
Gate threshold voltage
Capacitance C
(pF)
Ciss
1000
Coss
100
50
30
10
0.1
Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25C
0.3 0.5
Drain-source voltage
10
30 50
0
80
100
40
VDS (V)
40
80
120
160
Case temperature Tc (C)
PD Tc
Dynamic Input/Output Characteristics
160
VDS (V)
60
40
Drain-source voltage
Drain power dissipation PD (W)
1.6
20
40
Common source
ID = 18 A
Tc = 25C
Pulse test
120
30
VDS
80
20
30
60
40
VDD = 120 V
10
VGS
0
0
40
80
120
0
0
160
20
40
60
Total gate charge Qg (nC)
Case temperature Tc (C)
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2SK2882
rth tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
PDM
0.02
0.03
t
0.01
0.01
Single pulse
Duty = t/T
Rth (ch-c) = 2.78C/W
0.005
0.003
10
100
1m
10 m
Pulse width
100 m
tw
(s)
Safe Operating Area
EAS Tch
100
200
ID max (pulsed)*
100 s*
30
ID max (continuous)*
Drain current ID (A)
Avalanche energy EAS (mJ)
50
1 ms*
10
5
3
10
DC operation
Tc = 25C
160
120
80
40
1
0.5
0.3
0
25
*: Single nonrepetitive
pulse Tc = 25C
10
75
100
125
150
Channel temperature (initial) Tch (C)
Curves must be derated
linearly with increase in
temperature.
0.1
1
50
VDSS max
30
Drain-source voltage
100
300
VDS (V)
15 V
BVDSS
IAR
15 V
VDS
VDD
Test circuit
RG = 25
VDD = 50 V, L = 0.8 mH
Wave form
1 2
B VDSS
AS = LI
B
V
DD
VDSS
2006-11-20
2SK2882
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2006-11-20
