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Silicon PNP Transistors 2N5879 2N5880 Specs

The document provides specifications for the 2N5879 and 2N5880 silicon PNP power transistors from SavantIC Semiconductor. The transistors are housed in a TO-3 package and are suitable for general purpose power amplification and switching applications. Key specifications include maximum ratings for collector-emitter voltage, collector current and power dissipation. Electrical characteristics such as saturation voltage, current gain and transition frequency are also listed.

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Massimo Maestrale
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62 views3 pages

Silicon PNP Transistors 2N5879 2N5880 Specs

The document provides specifications for the 2N5879 and 2N5880 silicon PNP power transistors from SavantIC Semiconductor. The transistors are housed in a TO-3 package and are suitable for general purpose power amplification and switching applications. Key specifications include maximum ratings for collector-emitter voltage, collector current and power dissipation. Electrical characteristics such as saturation voltage, current gain and transition frequency are also listed.

Uploaded by

Massimo Maestrale
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor

Product Specification

2N5879 2N5880

Silicon PNP Power Transistors


DESCRIPTION
With TO-3 package
Low collector saturation voltage
Complement to type 2N5881 2N5882
APPLICATIONS
For general-purpose power amplifier
and switching applications
PINNING
PIN

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta= )


SYMBOL

PARAMETER

CONDITIONS
2N5879

VCBO

Collector-base voltage

-60
V

Open base
-80

2N5880
VEBO

V
-80

2N5879
Collector-emitter voltage
Emitter-base voltage

UNIT

-60
Open emitter

2N5880
VCEO

VALUE

Open collector

-5

IC

Collector current

-15

ICM

Collector current-peak

-30

IB

Base current

-5

PD

Total Power Dissipation

160

Tj

Junction temperature

150

Tstg

Storage temperature

-65~200

TC=25

THERMAL CHARACTERISTICS
SYMBOL
Rth j-c

PARAMETER
Thermal resistance junction to case

VALUE
1.1

UNIT
/W

SavantIC Semiconductor

Product Specification

2N5879 2N5880

Silicon PNP Power Transistors

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

VCEO(SUS)

PARAMETER

Collector-emitter
sustaining voltage

CONDITIONS
2N5879

MIN

TYP.

MAX

UNIT

-60
IC=-0.2A ;IB=0

V
-80

2N5880

VCEsat-1

Collector-emitter saturation voltage

IC=-7A;IB=-0.7A

-1.0

VCEsat-2

Collector-emitter saturation voltage

IC=-15A;IB=-3.75A

-4.0

Base-emitter saturation voltage

IC=-15A;IB=-3.75A

-2.5

VBE

Base-emitter on voltage

IC=-6A ; VCE=-4V

-1.5

ICBO

Collector cut-off current

VCB=ratedVCBO; IB=0

-0.5

mA

ICEO

Collector
cut-off current

-1.0

mA

VBEsat

2N5879
2N5880

VCE=-30V; IB=0
VCE=-40V; IB=0

ICEX

Collector cut-off current

VCE=ratedVCE; VBE=-1.5V
TC=150

-0.5
-5.0

mA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

mA

hFE-1

DC current gain

IC=-2A ; VCE=-4V

35

hFE-2

DC current gain

IC=-6A ; VCE=-4V

20

hFE-3

DC current gain

IC=-15A ; VCE=-4V

Trainsistion frequency

IC=-1A ; VCE=-10V

fT

100

MHz

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5879 2N5880

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:0.10mm)

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