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B988

This document provides the product specification for the 2SB988 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package and is intended for vertical output and general purpose applications. The specification lists the transistor's maximum ratings, characteristics such as collector-emitter saturation voltage, current gain, and transition frequency, and its package outline dimensions.

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Bruno Alves
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466 views3 pages

B988

This document provides the product specification for the 2SB988 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package and is intended for vertical output and general purpose applications. The specification lists the transistor's maximum ratings, characteristics such as collector-emitter saturation voltage, current gain, and transition frequency, and its package outline dimensions.

Uploaded by

Bruno Alves
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor

Product Specification

2SB988

Silicon PNP Power Transistors

www.DataSheet4U.com

DESCRIPTION
With TO-220C package
Low collector saturation voltage
APPLICATIONS
For vertical output and general purpose
applicaitons
PINNING
PIN

DESCRIPTION

Emitter

Collector;connected to
mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-60

VCEO

Collector-emitter voltage

Open base

-60

VEBO

Emitter-base voltage

Open collector

-7

IC

Collector current (DC)

-3

IB

Base current

-0.5

PC

Collector dissipation

30

Tj

Junction temperature

150

Tstg

Storage temperature

-50~150

TC=25

Free Datasheet http://www.datasheet4u.net/

SavantIC Semiconductor

Product Specification

2SB988

Silicon PNP Power Transistors

www.DataSheet4U.com

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

V(BR)CEO

Collector-emitter breakdown voltage

IC=-30mA; IB=0

VCEsat

Collector-emitter saturation voltage

IC=-3A; IB=-0.3A

-1.0

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-5V

-1.0

ICBO

Collector cut-off current

VCB=-60V; IE=0

-0.1

mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-0.1

mA

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

60

hFE-2

DC current gain

IC=-3A ; VCE=-5V

20

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

-60

UNIT
V

200

150

pF

MHz

hFE-1 Classifications
O

60-120

100-200

Free Datasheet http://www.datasheet4u.net/

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

www.DataSheet4U.com

2SB988

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.10mm)

Free Datasheet http://www.datasheet4u.net/

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