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2SB1625 PNP Darlington Transistor Specs

This document provides the product specification for the 2SB1625 silicon PNP Darlington power transistor from SavantIC Semiconductor. It is housed in a TO-3PML package and is intended for applications such as audio and regulators. The specification outlines the maximum ratings, characteristics, and package outline including pin descriptions and dimensions. Key parameters specified include a collector-emitter breakdown voltage of -110V, saturation voltages of -2.5V and -3V, current gain classifications of 5000-30000, and switching times below 3.2 microseconds.

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Octavio Isidro
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39 views3 pages

2SB1625 PNP Darlington Transistor Specs

This document provides the product specification for the 2SB1625 silicon PNP Darlington power transistor from SavantIC Semiconductor. It is housed in a TO-3PML package and is intended for applications such as audio and regulators. The specification outlines the maximum ratings, characteristics, and package outline including pin descriptions and dimensions. Key parameters specified include a collector-emitter breakdown voltage of -110V, saturation voltages of -2.5V and -3V, current gain classifications of 5000-30000, and switching times below 3.2 microseconds.

Uploaded by

Octavio Isidro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

www.DataSheet4U.com

2SB1625

DESCRIPTION
With TO-3PML package
Complement to type 2SD2494
APPLICATIONS
Audio ,regulator and general purpose
PINNING
PIN

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Maximum absolute ratings(Tc=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-110

VCEO

Collector-emitter voltage

Open base

-110

VEBO

Emitter-base voltage

Open collector

-5

IC

Collector current

-6

IB

Base current

-1

PC

Collector power dissipation

60

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TC=25

SavantIC Semiconductor

Product Specification

2SB1625

Silicon PNP Darlington Power Transistors

www.DataSheet4U.com

CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

VCEO

Collector-emitter breakdown voltage

IC=-50mA; IB=0

VCEsat

Collector-emitter saturation voltage

IC=-5 A;IB=-5m A

-2.5

VBEsat

Base-emitter saturation voltage

IC=-5 A;IB=-5m A

-3.0

ICBO

Collector cut-off current

VCB=-110V; IE=0

-100

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-100

hFE

DC current gain

IC=-5A ; VCE=-4V

fT

Transition frequency

IC=0.5A ; VCE=-12V

100

MHz

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

110

pF

1.1

3.2

1.1

-110

UNIT
V

5000

Switching times
ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;RL=6>
IB1=-IB2=-5mA
VCC=-30V

hFE classifications
O

5000-12000

6500-20000

15000-30000

SavantIC Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

www.DataSheet4U.com

PACKAGE OUTLINE

Fig.2 Outline dimensions

2SB1625

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