Module 5

UNIT -5
Field Effect Transistors
Review Questions:
1. Draw the structure of JFET and discuss its working.
2. What is pinch off voltage? How to get its value experimentally?
3. An n-JFET is operated with negative gate voltage and not with positive one. Give
reasons.
4. Give the structure of depletion MOSFET (D - MOSFET). How is D - MOSFET
different from enhancement MOSFET (E - MOSFET)?
5. Draw and discuss drain characteristics for a D-MOSFET.
6. Discuss the formation of channel in E-MOSFET emphasizing the role of inversion
layer.
7. Give self bias circuit for JFET and explain the biasing process.
8. How can we obtain negative or positive bias voltage with proper choice of
resistors in a voltage divider bias?
9. Develop a simple small signal model/equivalent circuit for FET.
10. How are DMOSFET and EMOSFET connected in a circuit to work as resistors?
11. Derive expression for voltage gain for a common source amplifier.
12. Illustrate power efficiencies of CMOS devices through a CMOS inverter circuit.

Problems:5.1 The device parameters for an n-Channel JFET are: Maximum current IDSS = 10mA,
Pinch off voltage,
Vp =

- 4V

Calculate the drain current for

- 1.0v
- 4V.

(b) VGS =
(c) VGS =

Solution:The expression for drain current ID, in the saturation region is,

ID

VGS
VP

I DSS 1

...................( A)

(a) When VGS = 0, from Eq(A) above,

I DSS

10mA

(b) When VGS = -1.0V, the drain current from Eq (A) is,

ID

10 10

1
4

10mA 0.56
or I D 5.6 mA
(c) When VGS = -4V = Vp, then from Eq(A),

ID

I DSS 1

or , I D

4
4

5.2 A JFET produces gate current of 2nA when gate is reverse biased with 8V.
Determine The resistance between gate and source.

Solution:Since reverse gate-source voltage, VGS, of 8v produces gate current, IG of 2nA,

RGS

VGS
IG

RGS

4000M

8V
2nA

4000M

5.3 The reverse gate voltage of JFET when changes from 4.4V to 4.2V, the drain
current changes from 2.2 mA to 2.6 mA. Find out the value of transconductance of the
transistor.

Solution:The transconductance, gm is defined as

gm

Where ID is change in drain current when change in gate-source voltage is VGS.

0.4 mA
0.2V
or , g m 2.0 m mhos.
gm

5.4 Find out the operating point current and voltage values (IDQ and VDSQ) for a self
biased JFET having the supply voltage VDD = 20V and maximum value of drain current
as 12 mA.

Solution:We know that the value of drain current at Q-point may be taken as half of the maximum
current, that is,
I DQ

I DSS
2

12mA
2

6.0 mA

In the same way, the value of drain-source voltage at Q-point may be taken as half of
supply voltage VDD. That is,

VDD 20V
2
2
or , VDSQ 10V

VDSQ

Therefore,
IDQ = 6.0 mA
VDSQ = 10.0 V

5.5 Calculate the value of source resistance RS required to self bias a n-JFET such that
VGSQ =

3V. The n-JFET has maximum drain-source current IDSS = 12 mA, and pinch-

off voltage, Vp =

- 6V

Solution:The drain current, ID, in a JFET, in the saturation region is,

ID

VGS
Vp

I DSS 1

We have, IDSS = 12 mA, VGS = -3V and Vp = -6V, Therefore,

ID

12mA 1

or , I D

3
6

9.0 mA

Since the voltage VGS is generated across the source resistor RS, we have,

RS

VGS
ID

RS 333

3V
333
9 mA

5.6 For the DMOSFET circuit shown in fig., the device parameters are:
VGS(off) = -8V, IDSS = 10mA
Determine drain-to- source voltage VDS.

VDD = + 18V
ID
RD

680

+
VDS
RG

10M

Solution:In a MOSFET, there is no gate current. Therefore, there is no voltage drop across
resistor RG .
Thus, VGS = 0.
Further, when VGS =0, ID = IDSS, the maximum drain current.
Summing up voltages in the output loop and using ID = IDSS,
We have,
IDSS .RD + VDS = VDD
or VDS = VDD IDSS . RD
= 18 10 X 10-3 X 0.68 X 103
= 18 6.8
or VDS = 11.2 V

5.7 Data sheet of an EMOSFET specifies following parameters:

Solution:We first determine the conductance parameter k for the device using the relation,

I D (ON )

VGS

VT

50 mA
(6 2) 2
or , k

3.12 mA

v2

Now, the drain current, ID is expressed as,

ID

k VGS

VT

3.12 10 3 (3 2) 2
or , I D
3.12 mA

5.8 The drain current changes from 5 mA to 7 mA when the gate voltage is changed
from 4.0V to 3.7V in the amplifier circuit shown in fig.
Calculate the voltage gain of the amplifier.

+15V

6k

RD
vo

vi

RS
400

RL

6k

Solution:In case, the source resistance RS is ac grounded as done in the circuit of fig. the gain of
amplifier is,
AV = gm.rD
Where gm is transconductance of the transistor and rD is effective ac resistance seen by
the drain terminal.
Now,

gm

ID
VGS

VDS

2 mA
0.3V
or , g m 6.66 mS
And,
rD = RD

RL = 6k

6k

= 3k

Therefore,
AV = gm X rD = 6.66 X 10-3 X 3 X 103
or, AV = 20

5.9 Find the drain-source voltage, VDS, for the NMOS transistor circuit shown in fig. The
device parameters are: conductance parameter, k = 600A/v2 and VT = 2V.

+15V

4M

R1

RD

2k

+
VDS

2M

R2

Solution:The gate current, IG, is zero in a MOSFET. Then, from voltage divider network,

R2

VGS

R1

R2

VDD

2M
4M
or , VGS

2M

15V

5V

And, as we know

ID

k VGS

VT

600 10 6 (5 2) 2
5.4 mA
or , I D 5.4 mA
Applying voltage summation in the output loop,
VDD = IDRD + VDS
or, VDS = VDD IDRD = 15 (5.4 X 10-3 X 2 X 103)
or, VDS = 4.2V

5.10 Calculate the voltage gain in the amplifier shown in fig. The transconductance of
the transistor is 4000s. If the 400 source resistance is by passed by an capacitor,
how much is voltage gain now?

+20V
RD

6k

vo

vi
RL

RG
5M

400

RS

10k

Solution:When the source resistance RS is not by passed, the voltage gain is,
g m rD
1 g m rs

AV

...........( A)

Where rD and rS are effective (ac) resistance seen by the drain and source of the
transistor.
And,
rD = RD
= 6k

RL
10 k = 3.75 k

And,
rS = RS = 400
Therefore

AV

AV

4000 10 6 3.75 103

In case, RS is bypassed, the gain (rS = 0 in the Eq(A)),