MJL4281A (NPN)
MJL4302A (PNP)
Preferred Device
Complementary NPNPNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are PowerBase power transistors
for high power audio.
350 V CollectorEmitter Sustaining Voltage
Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain 80 to 240
hFE = 50 (min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area 1.0 A/100 V @ 1 Second
High fT
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15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
350 VOLTS
230 WATTS
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
350
Vdc
CollectorBase Voltage
VCBO
350
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
VCEX
350
Vdc
Collector Current Continuous
Collector Current Peak (Note 1)
IC
15
30
Adc
Base Current Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25C
Derate Above 25C
PD
230
1.84
Watts
C/W
TJ, Tstg
65 to
+150
Symbol
Max
Unit
RJC
0.54
C/W
Rating
Operating and Storage Junction
Temperature Range
1
2
Thermal Resistance,
Junction to Case
TO264
CASE 340G
STYLE 2
MARKING DIAGRAM
MJL
4xxxA
LLYWW
THERMAL CHARACTERISTICS
Characteristic
1 BASE
3 EMITTER
2 COLLECTOR
MJL4xxxA
xxx
LL
Y
WW
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
= Device Code
= 281 OR 302
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJL4281A
TO264
25 Units/Rail
MJL4302A
TO264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2003
July, 2003 Rev. 1
Publication Order Number:
MJL4281A/D
MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
VCE(sus)
350
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cutoff Current
(VCE = 200 V, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
100
Adc
Adc
50
5.0
4.5
1.0
80
80
80
80
50
10
250
250
250
250
1.0
1.4
1.5
35
600
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (nonrepetitive)
(VCE = 100 Vdc, t = 1.0 s (nonrepetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
CollectorEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
VCE(sat)
EmitterBase Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
VBE(sat)
BaseEmitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
CurrentGain Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
MHz
Cob
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2
pF
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
TJ = 100C
100
TJ = 25C
0.1
10
100
0.01
10
100
IC, COLLECTOR CURRENT (A)
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TJ = 25C
0.1
10
TJ = 100C
100
10
0.01
100
TJ = 25C
0.1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, VCE = 20 V,
NPN MJL4281A
Figure 4. DC Current Gain, VCE = 20 V,
PNP MJL4302A
2.0
1.8
1.2
SATURATION VOLTAGE (V)
SATURATION VOLTAGE (V)
Figure 2. DC Current Gain, VCE = 5 V,
PNP MJL4302A
1.4
1
0.8
Vbe(sat)
0.6
0.4
Vce(sat)
0.2
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
TJ = 100C
10
0.01
TJ = 25C
Figure 1. DC Current Gain, VCE = 5 V,
NPN MJL4281A
1000
100
100
10
10
0.01
TJ = 100C
0.1
TJ = 25C
Ic/Ib = 10
10
1.6
1.4
1.2
1.0
Vbe(sat)
0.8
0.6
0.4
Vce(sat)
0.2
100
0.0
0.01
0.1
TJ = 25C
Ic/Ib = 10
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
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3
100
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
2.5
VBE(on), BASEEMITTER VOLTAGE
(V)
1.2
1.0
0.8
0.6
0.4
0.2
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0.0
0.01
0.1
10
100
1.0
0.5
0.0
0.01
0.1
10
Figure 7. Typical BaseEmitter Voltages,
NPN MJL4281A
Figure 8. Typical BaseEmitter Voltages,
PNP MJL4302A
60
VCE = 5 V
50
40
VCE = 10 V
30
20
TJ = 25C
ftest = 1 MHz
1.5
IC, COLLECTOR CURRENT (A)
70
10
2.0
IC, COLLECTOR CURRENT (A)
0.1
10
fT, CURRENT BANDWIDTH PRODUCT (MHz)
VBE(on), BASEEMITTER VOLTAGE
(V)
1.4
100
70
60
VCE = 5 V
50
VCE = 10 V
40
30
20
10
TJ = 25C
ftest = 1 MHz
0
0.1
10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
Figure 10. Typical Current Gain Bandwidth Product,
PNP MJL4302A
100
10 mS
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
10
1 Sec
1
100 mS
0.1
TJ = 25C
0.01
1
10 mS
10
1 Sec
1
100 mS
0.1
TJ = 25C
0.01
10
100
1000
Vce, COLLECTOREMITTER VOLTAGE (V)
10
100
1000
Vce, COLLECTOREMITTER VOLTAGE (V)
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
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4
MJL4281A (NPN) MJL4302A (PNP)
PACKAGE DIMENSIONS
TO3PBL (TO264)
CASE 340G02
ISSUE H
0.25 (0.010)
T B
T
C
E
U
N
A
1
Y
P
K
F 2 PL
G
J
H
D 3 PL
0.25 (0.010)
Y Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
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5
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125
MJL4281A (NPN) MJL4302A (PNP)
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email:
[email protected]JAPAN: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
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For additional information, please contact your local
Sales Representative.
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6
MJL4281A/D
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
