NEC's HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR TYPE
MULTI OPTOCOUPLER SERIES
PS2561-1, -2, -4
PS2561L-1, -2, -4
FEATURES
DESCRIPTION
HIGH ISOLATION VOLTAGE (BV)
5000 Vr.m.s.: normal specification products
NEC's PS2561-1, -2 and -4 and PS2561L-1, -2 and -4 are
optically coupled isolators containing a GaAs light emitting
diode and a NPN silicon phototransistor. PS2561-1, -2 and 4 are in a plastic DIP (Dual In-line Package) and PS2561L-1,
-2 and -4 are in a lead bending type (Gull-wing) for surface
mount.
HIGH COLLECTOR TO EMITTER VOLTAGE
VCEO = 80 V MIN
HIGH CURRENT TRANSFER RATIO
CTR: 200% TYP
HIGH SPEED SWITCHING
tr = 3 s, tf = 5 s TYP
APPLICATIONS
ISOLATED CHANNELS PER EACH PACKAGE
Interface circuit for various instrumentations, and control
equipment.
AC LINE / DIGITAL LOGIC
DIGITAL LOGIC / DIGITAL LOGIC
TWISTED PAIR LINE RECEIVER
TELEPHONE / TELEGRAPH LINE RECEIVER
HIGH FREQUENCY POWER SUPPLY
FEEDBACK CONTROL
RELAY CONTACT MONITOR
POWER SUPPLY MONITOR
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER
Transistor
Diode
SYMBOLS
UNITS
MIN
TYP
VF
Forward Voltage, IF = 10 mA
IR
Reverse Current, VR = 5 V
Junction Capacitance, V = 0, f = 1.0 MHz
pF
Collector to Emitter Dark Current, VCE = 40 V, IF = 0
nA
BVCEO
Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0
40
BVECO
Emitter to Collector Breakdown Voltage, IE = 100 A, IB = 0
Current Transfer Ratio1, IF = 5 mA, VCE = 5 V
80
200
Collector Saturation Voltage, IF = 10 mA, IC = 2 mA
Isolation Resistance, Vin-out = 1 k V
1011
Isolation Capacitance, V = 0, f = 1.0 MHZ
pF
0.5
Rise Time2, VCC = 10 V, IC = 2 mA, RL = 100
ICEO
CTR
Coupled
PS2561-1, -2, -4 PS2561L-1, -2, -4
PARAMETERS
VCE(sat)
R1-2
C1-2
tr
tf
Fall
Time2,
VCC = 10 V, IC = 2 mA, RL = 100
Note:
1.
CTR Rank (PS2561-1, PS2561L-1 Only)
L: 200 to 400 %
M:80 to 240 %
D: 100 to 300 %
8 7 6 5
4 3
H: 80 to 160 %
W: 130 to 260 %
1.17
1 2 3 4
PS2561-1
PS2561-2
1.4
5
50
100
60
400
0.3
2.Test Circuit for Switching Time
VCC
PULSE INPUT
16 15 14 13 12 11 10 9
PW = 100 S
Duty Cycle
= 1/10
IF
1 2
MAX
1 2 3 4 5 6 7 8
50
VOUT
3
RL = 100
PS2561-4
California Eastern Laboratories
PS2561-1, -2, -4 PS2561L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS
PARAMETERS
Diode
VR
IF
PD
UNITS
RATINGS
PS2561 -1 PS2561 -2,-4
PS2561L -1 PS2561L -2,-4
Reverse Voltage
V
Forward Current (DC)
mA
Power Dissipation
mW/Ch
Peak Forward Current
A
(PW = 100 s, Duty Cycle 1%)
IF (PEAK)
Transistor
VCEO
Collector to Emitter Voltage
VECO
Emitter to Collector Voltage
IC
Collector Current
PC
Power Dissipation
Coupled
BV
Isolation Voltage2 normal speck
BV
Isolation Voltage2 VDE0884 speck
PT
Total Power Dissipation
TSTG
Storage Temperature
TOP
Operating Temperature
TSOL
Lead Temperature
(Soldering 10 s)
V
V
mA
mW/Ch
6
80
150
1
6
80
120
1
80
7
50
150
80
7
50
120
Vr.m.s.
5000
Vr.m.s.
3750
mW/Ch
250
C
-55 to +150
C
-55 to +100
C
260
TYPICAL PERFORMANCE CURVES (TA =
Notes:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. AC voltage for 1 minute at TA = 25 C, RH = 60 % between
input and ouput.
5000
3750
200
-55 to +150
-55 to +100
260
25)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
Transistor Power Dissipation, PC (mW)
Diode Power Dissipation, PD (mW)
150
PS2561-1
PS2561L-1
100
1.5 mW/C
PS2561-2
PS2561L-2
50
1.2 mW/C
100
1.5 mW/C
PS2561-2
PS2561L-2
50
1.2 mW/C
0
50
25
75
100
125
150
75
50
25
100
125
Ambient Temperature, TA (C)
Ambient Temperature, TA (C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR to EMITTER VOLTAGE
100
150
70
100 C
60 C
25 C
60
Collector Current, IC (mA)
50
Forward Current, IF (mA)
PS2561-1
PS2561L-1
10
5
0 C
-25 C
-55 C
1
0.5
50
40
50
20
30
mA
10
20
mA
IF = 5 mA
10
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Forward Voltage, VF (V)
1.4
1.5
Collector to Emitter Voltage, VCE (V)
10
PS2561-1, -2, -4 PS2561L-1, -2, -4
TYPICAL PERFORMANCE CURVES (TA = 25 C)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50 mA
10000
VCE = 80 V
VCE = 40 V
VCE = 24 V
VCE = 10 V
VCE = 5 V
1000
Collector Current, IC (mA)
Collector to Emitter Dark Current, ICEO (nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100
10
-50
-25
25
50
75
2 mA
IF = 1mA
1
0.5
0.1
100
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage, VCE(sat) (V)
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
450
Current Transfer Ratio, CTR (%)
1.0
0.8
0.6
0.4
0.2
Ambient Temperature, TA (C)
Normalized to 1.0
at TA = 25 C
IF = 5 mA, VCE = 5 V
-50
-25
25
50
75
400
350
300
250
200
150
100
50
0
100
0.05 0.1
0.5
Forward Current, IF (mA)
SWITCHING TIME
vs. LOAD RESISTANCE
SWITCHING TIME
vs. LOAD RESISTANCE
1000
tf
tr
ts
100
10
10
td
ts
1
IC = 2 mA
VCC = 10 V
TA = 25 C
CTR 290 %
tr
td
500 1 k
50
50
tf
IC = 5 mA
VCC = 5 V
TA = 25C
CTR 290 %
1
100
10
Ambient Temperature,TA (C)
Switching Time, t (s)
CTR, Normalized Output Current
1.2
Switching Time, t (s)
10
20 mA
10 mA
5 mA
10 k
Load Resistance, RL ()
50 k 100 k
0.1
10
50
100
500
1k
Load Resistance, RL ()
5k
10 k
PS2561-1, -2, -4 PS2561L-1, -2, -4
TYPICAL PERFORMANCE CURVES (TA =
25)
CTR DEGRADATION
1.2
IF = 5 mA
VCE = 5 V
TA = 25 C
TYP.
1.0
CTR, Normalized
Relatirve Voltage Gain, Av (dB)
FREQUENCY RESPONSE
-5
-10
100
-15
RL = 1 k
-20
0.8
IF = 5 mA
TA = 25 C.
0.6
IF = 5 mA
TA = 60 C.
0.4
0.2
300
0.5
10 20
50
100 200
500
10 2
103
Frequency, f (kHz)
105
104
Time, Hr
OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-Line Package)
PS2561-1
PS2561-2
5.1 MAX
10.2 MAX
8 7 6 5
4 3
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
6.5
1 2
3.8
MAX
2.54
1 2 3 4
3.8
MAX
7.62
2.54
7.62
4.55
MAX
4.55
MAX.
2.8
MIN 0.65
2.8
MIN. 0.65
1.34
0.50 0.10
0.25 M
1.34
0 to 15
PS2561-4
20.3 MAX
16 15 14 13 12 11 10 9
6.5
1 2 3 4 5 6 7 8
3.8
MAX
2.54
1, 3, 5, 7.
2, 4, 6, 8.
9, 11, 13, 15.
10, 12, 14, 16.
7.62
4.55
MAX
2.8
MIN 0.65
0.50 0.10
1.34
0.25 M
0 to 15
Anode
Cathode
Emitter
Collector
0.50 0.10
0.25 M
0 to 15
PS2561-1, -2, -4 PS2561L-1, -2, -4
OUTLINE DIMENSIONS (Units in mm) Lead Bending type (Gull-Wing)
PS2561L-1
PS2561L-2
8 7 6 5
4 3
5.1 MAX
1. Anode
2. Cathode
3. Emitter
4. Collector
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
10.2 MAX
1 2 3 4
1 2
7.62
2.54
7.62
6.5
2.54
3.8
MAX
0.05 to 0.2
0.05 to 0.2
0.9 0.25
0.9 0.25
1.34 0.10
0.25 M
6.5
3.8
MAX
1.34 0.10
0.25 M
9.60 0.4
9.60 0.4
PS2561L-4
20.3 MAX
16 15 14 13 12 11 10 9
7.62
2.54
1 2 3 4 5 6 7 8
6.5
3.8
MAX
1, 3, 5, 7.
2, 4, 6, 8.
9, 11, 13, 15.
10, 12, 14, 16.
0.05 to 0.2
1.34 0.10
Anode
Cathode
Emitter
Collector
0.9 0.25
0.25 M
9.60 0.4
OUTLINE DIMENSIONS (Units in mm) DIP (Lead-Bending Type)
PS2561L1-1
PS2561L2-1
5.1 MAX
5.1 MAX
4
6.5
6.5
10.16
7.6
2.54
7.62
3.8 MAX
6.5
4.25 MAX
3.8 MAX
2.8 MIN 0.35
1.34
0.25 0.2
0.50 0.10
0.25 M
0.9 0.25
0-15
1.27 MAX
2.54
1.34 0.10
0.25 M
10.16
12.0 MAX
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
10/14/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.