4.9-5.

9 GHz High-Linearity Power Amplifier

SST11CP15
Data Sheet

The SST11CP15 is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. Easily configured for high-linearity, high-efficiency applications with superb power-added efficiency while operating over the 4.9-5.9 GHz
frequency band. The SST11CP15 has excellent linearity while meeting 802.11a
spectrum mask at 23dBm. The SST11CP15 also features easy board-level usage
along with high-speed power-up/down control through a single combined reference voltage pin and is offered in a 12-contact UQFN package.

Features

Applications

Small package size

WLAN (IEEE 802.11a/n)

12-contact UQFN (2mm x 2mm x 0.6mm max thickness)

Japan WLAN
HyperLAN2

Wide operating voltage range

VCC = 3.05.0V

Multimedia

High linear output power:

802.11a OFDM Spectrum mask compliance up to 23
dBm at 3V.
Added EVM ~3% up to 20 dBm, typically at 5V VCC,
across 5.1-5.9 GHz for 54 Mbps 802.11a signal

WiMax

High power-added efficiency/low operating current

for 54 Mbps 802.11a applications
~11% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC

Gain:
Typically 26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC

Low idle current

~120 mA ICQ

High speed power-up/-down

Turn on/off time (10%~90%) <100 ns

Low shut-down current (<1 A)

On-chip power detection
20 dB linear dynamic range
50 on-chip input match and simple output match

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SST11CP15
Data Sheet

Product Description
The SST11CP15 is a high-linearity power amplifier that has low power consumption and is based on
the highly-reliable InGaP/GaAs HBT technology.
The SST11CP15 offers a wide operating-voltage range from VCC 3.3v to 5.0V. It can be easily configured for high-linearity, high-efficiency applications with superb power-added efficiency y while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.9 GHz).
The SST11CP15 has excellent linearity, typically ~3% added EVM at 20 dBm output power for 54 Mbps
802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 23 dBm. SST11CP15 also provides a wide dynamic-range, linear power detector which can lower users cost on power control.
The power amplifier IC also features easy board-level operation along with high-speed power-up/down
control. Low reference current (total IREF <5 mA) makes the SST11CP15 controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST11CP15 ideal for the final stage power amplification in battery-powered 802.11a WLAN
transmitter applications.
The SST11CP15 is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure
2 for pin assignments and Table 1 for pin descriptions.

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SST11CP15
Data Sheet

VREF1

VCC2

VCC3
10

Input
Match

Bias
Control

Power
Detection

6
DET

VCCb

11

VREF3

12

VREF2

RFIN

VCC1

Functional Blocks

GND

RFOUT

NC

1428 B1.0

Figure 1: Functional Block Diagram

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SST11CP15
Data Sheet

RFIN

VCC1

VCC2

VCC3

Pin Assignments

12

11

10

GND

RFOUT

NC

Top View
(Contacts facing down)

RF and DC GND
0

6
DET

VREF3

VREF1

VREF2

VCCb

1428 P1.0

Figure 2: Pin Assignments for 12-contact UQFN

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SST11CP15
Data Sheet

Pin Descriptions
Table 1: Pin Description
Symbol

Pin No.

GND

RFIN

VCCb

VREF1
VREF2

Pin Name

Type1

Ground

The center pad should be connected to RF ground with several

low inductance, low resistance vias.
I

Power Supply

Function

RF input, DC decoupled

PWR

Supply voltage for bias circuit

PWR

Current Control

PWR

Current Control

VREF3

PWR

Current Control

DET

NC

RFOUT

GND

Ground

VCC3

10

Power Supply

PWR

Power supply, 3rd stage

VCC2

11

Power Supply

PWR

Power supply, 2nd stage

VCC1

12

Power Supply

PWR

Power supply, 1st stage

On-chip power detector

No Connection

Unconnected pin
O

RF Output
Ground (NC is acceptable)

T1.1 75016

1. I=Input, O=Output

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SST11CP15
Data Sheet

Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 12 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under Absolute
Maximum Stress Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20C to +85C
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds

Table 2: Operating Range

Range

Ambient Temp

VCC

Industrial

-10C to +85C

3.3V-5.0V
T2.1 75016

Table 3: DC Electrical Characteristics

Symbol

Parameter

VCC

Supply Voltage at pins 2, 10, 11, 12

ICC

Supply Current @ POUT = 18 dBm

VCC = 3.3V

ICQ

Min.
2.7

Typ
3.3

Max.

Unit

5.0

220

mA

VCC = 4.2V

240

mA

VCC = 5.0V

290

mA

135

mA

VCC = 4.2V

170

mA

VCC = 5.0V

175

mA

VCC quiescent current

VCC = 3.3V

IOFF

Shut down current

1.0

VREG

Reference Voltage for recommended application

2.85

10

A
V
T3.0 75016

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SST11CP15
Data Sheet

Table 4: AC Electrical Characteristics for Configuration

Symbol

Parameter

Min

FL-U

Frequency range

4.9

Linear Power

Output power with 3% EVM at 54 Mbps OFDM signal

VCC = 3.3V
VCC = 5.0V

ACPRA

Output power level with 802.11a mask compliance

VCC = 3.3V
VCC = 5.0V

Gain

Power gain from 4.95.9 GHz

VCC = 3.3V
VCC = 5.0V

Typ

Max

Unit

5.9

GHz

18

dBm

20

dBm

23

dBm

23

dBm

26

dB

22

dB
T4.1 75016

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SST11CP15
Data Sheet

Typical Performance Characteristics

Test Conditions: VCC = 3.3V, TA = 25C, VREG = 2.85V unless otherwise noted
EVM for 54 Mbps Operation using data plus sequence test configuration
EVM versus Output Power
10
9
8

Freq=4.9 GHz
Freq=5.1 GHz
Freq=5.5 GHz
Freq=5.825 GHz

EVM (%)

7
6
5
4
3
2
1
0
0

10 11 12 13 14 15 16 17 18 19 20 21

Output Power (dBm)

1428 F4.1

Figure 3: EVM versus Output Power, VCC = 3.3V, VREG = 2.85

Supply Current (mA)

Supply Current versus Output Power

300
290
280
270
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60

Freq=4.9 GHz
Freg=5.1 GHz
Freq=5.5 GHz
Freq=5.825 GHz

10 11 12 13 14 15 16 17 18 19 20 21

Output Power (dBm)

1428 F5.1

Figure 4: Power Supply Current versus Output Power, VCC = 3.3V, VREG = 2.85

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SST11CP15
Data Sheet

Power Gain (dB)

Power Gain versus Output Power

34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10

Freq=4.9 GHz
Freg=5.1 GHz
Freq=5.5 GHz
Freq=5.825 GHz

10

11

12

13

14

15

16

17

18

19

Output Power (dBm)

20

21
1428 F7.1

Figure 5: Power Gain versus Output Power, VCC = 3.3V, VREG = 2.85

Spectrum Mask 802.11a (5500MHz)

0
-10

Amplitude(dB)

-20
-30
Spectrum

-40

Relative limit
-50
-60
-70
-80
5.45

5.5

Frequency(GHz)

5.55
1428 F6.0

Figure 6: Maximum Mask Compliance, VCC = 3.3V, VREG = 2.85, Frequency = 5.5 GHz at
POUT = 23.3 dBm with ICC = 390 mA

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SST11CP15
Data Sheet

Detector Voltage versus Output Power

1.30

Detector Voltage (V)

1.20
1.10
Freq=4.9 GHz

1.00

Freq=5.5 GHz
0.90

Freq=5.5 GHz

0.80

Freq=5.825 GHz

0.70
0.60
0.50
0.40
0.30
0

10 11 12 13 14 15 16 17 18 19 20 21

Output Power (dBm)

1428 F8.1

Figure 7: Detector Voltage vs Output Power, VCC = 3.3V, VREG = 2.85

PAE versus Output Power

14
13
12
11

PAE (%)

10
9
8

Freq=4.9 GHz

Freg=5.1 GHz

Freq=5.5 GHz

Freq=5.825 GHz

4
3
2
1
0
0

10 11 12 13 14 15 16 17 18 19 20 21

Output Power (dBm)

1428 F9.1

Figure 8: PAE vs Output Power, VCC = 3.3V, VREG = 2.85

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SST11CP15
Data Sheet

Typical Performance characteristics

Test Conditions: VCC = 5.0V, TA = 25C, VREG = 2.90V unless otherwise noted

EVM versus Output Power

10

EVM (%)

9
8

4920

5180

5500

5850

4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Output Power (dBm)

1428 F13.0

Figure 9: EVM versus Output Power, VCC = 5.0V, VREG = 2.90V

Supply Current (mA)

Supply Current versus Output Power

420
400
380
360
340
320
300
280
260
240
220
200
180
160
140
120
100
0 1

4920

5180

5500

5850

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Output Power (dBm)

1428 F14.0

Figure 10:DC Current versus Output Power, VCC = 5.0V, VREG = 2.90V

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SST11CP15
Data Sheet

Power Gain (dB)

Power Gain versus Output Power

28
26
24
22
20
18
16
14
12
10
8
6
4
2
0

4920
5180
5500
5850
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Output Power (dBm)

1428 F12.0

Figure 11:Gain versus Output Power, VCC = 5.0V, VREG = 2.90V

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SST11CP15
Data Sheet

S12 versus Frequency

-5

-10

-10

-20

-15

-30

S12 (dB)

S11 (dB)

S11 versus Frequency

-20
-25
-30

-50
-60

-35

-70

-40

-80
0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0 11.0

0.0

12.0 13.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

Frequency (GHz)

Frequency (GHz)

S21 versus Frequency

S22 versus Frequency

40

30

-5

20

-10

S22 (dB)

S21 (dB)

-40

10
0
-10
-20

10.0

11.0

12.0 13.0

-15
-20
-25
-30

-30

-35

-40
0.0

-40
0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

Frequency (GHz)

11.0

12.0 13.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0 13.0

Frequency (GHz)

1428 S-Parms.1.0

Figure 12:S-Parameters

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SST11CP15
Data Sheet

VCC
0.1 F

0.1 F

0.1 F

12

11

4.7 F

10

35 mil from the edge of the package

50
RFIN

11CP15
2X2 12L UQFN
Top View

VCCb

0.1 pF

0.1 F

50
8

RFOUT
0.7 pF

68

105
Test Conditions
VREG = 2.85V
VCC=VCCb=3.3V
200 pF

DET

VREG
1428 F11.1

Note: The SST11CP15 has on-chip DC-blocking caps for RF ports

Figure 13:Typical Application for High-Linearity 802.11a/n Application (VCC = 3.3V,

VREG=2.85V)

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SST11CP15
Data Sheet
VCC
0.1 F

0.1 F

12
mil

146
mil

12

0.1 F

4.7 F

20
mil

11

Capacitor placement is measured from

edge of PA to edge of capacitor.

10

50
RFIN

VCCb

11CP15
2X2 12L UQFN
Top View

0.1 F

50

50
8

RFOUT
0.7 pF

87

87
Test Conditions
VREG = 2.9V
VCC=VCCb=5.0V
200 pF

DET

VREG
1428 F15.0

Figure 14:Typical Application for High-Linearity 802.11a/n Application (VCC = 5.0V,

VREG=2.90V)

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SST11CP15
Data Sheet

Product Ordering Information

SST

11 CP
XX XX

15
XX

QUBE
XXXX
Environmental Attribute
E1 = non-Pb contact (lead) finish
Package Modifier
B = 12 contact
Package Type
QU = UQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
C = 3.0-5.0V
Frequency of Operation
1 = 4.9-5.9 GHz
Product Line
1 = SST Communications

1. Environmental suffix E denotes non-Pb solder. SST non-Pb solder devices are RoHS
Compliant.

Valid combinations for SST11CP15

SST11CP15-QUBE

SST11CP15 Evaluation Kits

SST11CP15-QUBE-K
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combinations.

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SST11CP15
Data Sheet

Packaging Diagrams
TOP VIEW

SIDE VIEW

BOTTOM VIEW
See notes
2 and 3

2.00
0.05

Pin #1
(laser
engraved
see note 2)

Pin #1

0.075

2.00
0.05

0.92
0.4 BSC
0.265
0.165
0.05 Max
0.60
0.50

0.25
0.15

0.34
0.24

1mm
12-uqfn-2x2-QUB-2.0

Note: 1.
2.
3.
4.

Similar to JEDEC JEP95 UQFN/USON variants, though number of contacts and some dimensions are different.
The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown.
From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer.
The external paddle is electrically connected to the die back-side and to VSS.
This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of
the device.
5. Untoleranced dimensions are nominal target dimensions.
6. All linear dimensions are in millimeters (max/min).

Figure 15:12-contact Ultra-thin Quad Flat No-lead (UQFN)

SST Package Code: QUB

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SST11CP15
Data Sheet

Table 5: Revision History

Revision

Description

01

00

B
C

Initial Release of Data Sheet

Updated Features on page 1; Table 3 on page 6; and Figures 4, 5, 7,
8, and 14
Updated Features on page 1, Table 3 on page 6, and Table 4 on
page 7
Added Figures -11 and 14
Applied new document format
Released document under letter revision system
Updated spec number from Sy1428 to DS76016
Updated Figure 15 to reflect new Pin 1 indicator
Fixed figure references in history table and Electrical Specifications
on page 6 to point to the correct figures

Date
Jul 2010
Jan 2011
Aug 2011

Jul 2012
Aug 2013

ISBN:978-1-62077-406-9
2013 Silicon Storage Technology, Inca Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.

Silicon Storage Technology, Inc.

A Microchip Technology Company
www.microchip.com

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