2SK3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3563
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
Drain-gate voltage (RGS = 20 k)
VDGR
500
Gate-source voltage
VGSS
30
(Note 1)
ID
Pulse (t = 1 ms)
(Note 1)
IDP
20
Drain power dissipation (Tc = 25C)
PD
35
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150
DC
Drain current
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 12.2 mH, IAR = 5 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
2006-11-06
2SK3563
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Typ.
Max
Unit
10
VGS = 25 V, VDS = 0 V
V (BR) GSS
IG = 10 A, VDS = 0 V
30
IDSS
VDS = 500 V, VGS = 0 V
100
ID = 10 mA, VGS = 0 V
500
Drain cut-off current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Gate-source breakdown voltage
Test Condition
V (BR) DSS
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
1.35
1.50
Forward transfer admittance
Yfs
VDS = 10 V, ID = 2.5 A
1.5
3.5
Input capacitance
Ciss
550
70
ID = 2.5 A VOUT
10
RL =
90
20
10
50
16
10
Gate threshold voltage
VDS = 25 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
10 V
VGS
0V
ton
15
Switching time
Fall time
tf
Turn-off time
VDD
225 V
Duty <
= 1%, tw = 10 s
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD
400 V, VGS = 10 V, ID = 5 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
(Note 1)
IDRP
20
IDR = 5 A, VGS = 0 V
1.7
Forward voltage (diode)
VDSF
Reverse recovery time
trr
IDR = 5 A, VGS = 0 V,
1400
ns
Qrr
dIDR/dt = 100 A/s
Reverse recovery charge
Marking
K3563
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-06
2SK3563
ID VDS
ID VDS
10
COMMON SOURCE
10,15
Tc = 25C
PULSE TEST
10,15
5.5
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
52.5
4.75
4.5
6
COMMON SOURCE
Tc = 25C
PULSE TEST
5.5
4
5
2
4.5
VGS = 4 V
0
0
DRAIN-SOURCE VOLTAGE
VDS
VGS = 4 V
0
0
10
(V)
10
20
ID VGS
VDS (V)
PULSE TEST
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT ID (A)
VDS = 20 V
4
Tc = 55C
100
25
0
0
GATE-SOURCE VOLTAGE VGS
10
COMMON SOURCE
Tc = 25
PULSE TEST
16
12
ID = 5 A
8
2.5
4
1.2
0
0
12
16
GATE-SOURCE VOLTAGE VGS
Yfs ID
20
(V)
RDS (ON) ID
10
Tc = 55C
25
100
1
COMMON SOURCE
VDS = 20 V
PULSE TEST
10
DRAIN CURRENT ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)
FORWARD TRANSFER ADMITTANCE
Yfs (S)
(V)
20
(V)
10
0.1
0.1
VDS
VDS VGS
COMMON SOURCE
40
40
DRAIN-SOURCE VOLTAGE
10
30
COMMON SOURCE
Tc = 25C
PULSE TEST
0.1
0.1
VGS = 10 V15V
DRAIN CURRENT ID
(A)
10
(A)
2006-11-06
2SK3563
RDS (ON) Tc
IDR VDS
10
COMMON SOURCE
DRAIN REVERSE CURRENT IDR
(A)
PULSE TEST
4
ID = 5A
2.5
VGS = 10 V
1.2
0
80
40
40
80
CASE TEMPERATURE
120
Tc
COMMON SOURCE
Tc = 25C
PULSE TEST
3
1
0.5
0.3
10
5
0.1
0
160
(C)
0.2
CAPACITANCE VDS
VDS
1.2
(V)
Vth Tc
GATE THRESHOLD VOLTAGE
Vth (V)
(pF)
CAPACITANCE C
0.8
Ciss
1000
Coss
100
10 COMMON SOURCE
VGS = 0 V
Crss
f = 1 MHz
Tc = 25C
1
0.1
10
DRAIN-SOURCE VOLTAGE
30 50
VDS
2
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
100
(V)
VDS (V)
DRAIN-SOURCE VOLTAGE
40
30
20
10
80
120
CASE TEMPERATURE
40
80
120
Tc
160
(C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50
40
40
CASE TEMPERATURE
PD Tc
DRAIN POWER DISSIPATION
PD (W)
0.6
0.4
DRAIN-SOURCE VOLTAGE
10000
0
0
VGS = 0, 1 V
160
Tc
200
(C)
500
400
20
VDS
300
12
200
400
8
200
COMMON SOURCE
VGS
100
ID = 5 A
4
Tc = 25C
PULSE TEST
10
20
15
TOTAL GATE CHARGE
16
VDD = 100 V
Qg
0
25
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )
(nC)
2006-11-06
2SK3563
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth tw
10
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01
0.01
Duty = t/T
Rth (ch-c) = 3.57C/W
0.001
10
100
10
PULSE WIDTH
100
tw
EAS Tch
SAFE OPERATING AREA
100
200
AVALANCHE ENERGY
EAS (mJ)
DRAIN CURRENT ID (A)
ID max (PULSED) *
10
100 s *
ID max (CONTINUOUS) *
1 ms *
10
(s)
DC OPERATION
Tc = 25C
160
120
80
40
SINGLE NONREPETITIVE
0.1
PULSE
0
25
Tc=25
CURVES MUST BE
VDSS max
TEMPERATURE.
10
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
LINEARLY WITH INCREASE IN
0.01
1
50
DERATED
100
DRAIN-SOURCE VOLTAGE
1000
VDS
(V)
15 V
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 12.2mH
VDS
WAVE FORM
AS =
1
B VDSS
L I2
B
V
DD
VDSS
2006-11-06
2SK3563
RESTRICTIONS ON PRODUCT USE
030619EAA
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2006-11-06
