VSMG2700

Vishay Semiconductors

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES
Package type: surface mount
Package form: PLCC-2
Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
Peak wavelength: p = 830 nm
High reliability
High radiant power
94 8553

High radiant intensity

Angle of half intensity: = 60
Low forward voltage
Suitable for high pulse current operation

DESCRIPTION

High modulation band width: fc = 18 MHz

VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).

Good spectral matching with Si photodetectors

Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Find out more about Vishays Automotive Grade Product
requirements at: www.vishay.com/applications

APPLICATIONS
Infrared radiation source for operation with CMOS
cameras (illumination)
High speed IR data transmission

PRODUCT SUMMARY
COMPONENT

Ie (mW/sr)

(deg)

p (nm)

tr (ns)

10

60

830

20

VSMG2700

Note
Test conditions see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

VSMG2700-GS08

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

PLCC-2

VSMG2700-GS18

Tape and reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note
MOQ: minimum order quantity

** Please see document Vishay Material Category Policy: www.vishay.com/doc?99902

Document Number: 81472
Rev. 1.3, 03-Nov-09

For technical questions, contact: [email protected]

www.vishay.com
307

VSMG2700
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

Forward current

IF

100

mA
mA

Peak forward current

tp/T = 0.5, tp = 100 s

IFM

200

Surge forward current

tp = 100 s

IFSM

PV

180

mW
C

Power dissipation
Junction temperature

Tj

100

Operating temperature range

Tamb

- 40 to + 85

Storage temperature range

Tstg

- 40 to + 100

Acc. figure 8, J-STD-020

Tsd

260

J-STD-051, soldered on PCB

RthJA

250

K/W

Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 C, unless otherwise specified
200

120

IF - Forward Current (mA)

PV - Power Dissipation (mW)

180
160
140
120
100
RthJA = 250 K/W

80
60
40

100
80
60

RthJA = 250 K/W

40
20

20
0

0
0

10

21339

20

30

40

50

60

70 80

90 100

Tamb - Ambient Temperature (C)

10

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

20 30 40

50 60 70 80

90 100

Tamb - Ambient Temperature (C)

21340

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS
PARAMETER

TEST CONDITION

SYMBOL

TYP.

MAX.

IF = 100 mA, tp = 20 ms

VF

1.5

1.8

IF = 1 A, tp = 100 s

VF

2.3

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

Reverse current

VR = 5 V

IR

VR = 0 V, f = 1 MHz, E = 0

Cj

IF = 100 mA, tp = 20 ms

Ie

Forward voltage

Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e

MIN.

10

V
V
mV/K

10

22

mW/sr

125
6

UNIT

pF

IF = 1 A, tp = 100 s

Ie

100

IF = 100 mA, tp = 20 ms

40

mW

IF = 100 mA

TKe

- 0.35

%/K

60

deg

Angle of half intensity

mW/sr

Peak wavelength

IF = 100 mA

830

nm

Spectral bandwidth

IF = 100 mA

40

nm

Temperature coefficient of p

IF = 100 mA

TKp

0.25

nm/K

Rise time

IF = 100 mA

tr

20

ns

Fall time

IF = 100 mA

tf

20

ns

IDC = 70 mA, IAC = 30 mA pp

fc

18

MHz

0.44

mm

Cut-off frequency
Virtual source diameter
Note
Tamb = 25 C, unless otherwise specified
www.vishay.com
308

For technical questions, contact: [email protected]

Document Number: 81472

Rev. 1.3, 03-Nov-09

VSMG2700
High Speed Infrared Emitting Diode, Vishay Semiconductors
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

1.25
10 000
0.01
1000

0.02
0.05

100

0.2
0.5
DC
0.1

10

1
0.01

0.1

0.75

0.5

0.25

0
740

100

10

tp - Pulse Length (ms)

95 9985

1.0

900

800
- Wavelength (nm)

16972_1

Fig. 6 - Relative Radiant Power vs. Wavelength

Fig. 3 - Pulse Forward Current vs. Pulse Duration

10

20
30

Ie, rel - Relative Radiant Intensity

IF - Forward Current (mA)

1000

100

tp = 100 s
tp/T = 0.001

10

40
1.0
0.9

50

0.8

60
70

0.7

- Angular Displacement

IF - Forward Current (mA)

tp/T = 0.005

e, rel - Relative Radiant Power

Tamb < 60 C

80

1
0

0.6

0.4

0.2

94 8013

VF - Forward Voltage (V)

18873_1

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 7 - Relative Radiant Intensity vs. Angular Displacement

Ie - Radiant Intensity (mW/sr)

100

10
tp = 1 s
1

0.1
1
18874

10

100

1000

IF - Forward Pulse Current (mA)

Fig. 5 - Radiant Intensity vs. Forward Current

Document Number: 81472

Rev. 1.3, 03-Nov-09

For technical questions, contact: [email protected]

www.vishay.com
309

VSMG2700
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters

technical drawings
according to DIN
specifications

0.9

1.75 0.1

3.5 0.2

Pin identification

Mounting Pad Layout

area covered with

solder resist

2.6 (2.8)

2.2

2.8 0.15

1.2

4
1.6 (1.9)

2.4
3 + 0.15

Drawing-No.: 6.541-5067.01-4
Issue: 5; 04.11.08
20541

SOLDER PROFILE
DRYPACK
300

Temperature (C)

max. 260 C
245 C

255 C
240 C
217 C

250

FLOOR LIFE

200
max. 30 s
150
max. 100 s

max. 120 s
100

max. ramp up 3 C/s max. ramp down 6 C/s

50

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.

Floor life (time between soldering and removing from MBB)

must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.

DRYING

0
0
19841

50

100

150

200

250

300

Time (s)

Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020

www.vishay.com
310

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 C (+ 5 C), RH < 5 %.

For technical questions, contact: [email protected]

Document Number: 81472

Rev. 1.3, 03-Nov-09

VSMG2700
High Speed Infrared Emitting Diode, Vishay Semiconductors
830 nm, GaAlAs Double Hetero
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.

10.0
9.0

120

4.5
3.5
Adhesive tape

13.00
12.75

2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity

Blister tape

Component cavity

94 8670

Fig. 9 - Blister Tape

3.5
3.1

63.5
60.5

14.4 max.

180
178

94 8665

Fig. 12 - Dimensions of Reel-GS08

2.2
2.0

10.4
8.4

120
5.75
5.25
3.6
3.4

4.0
3.6

4.5
3.5

8.3
7.7

1.85
1.65

1.6
1.4

4.1
3.9

4.1
3.9

13.00
12.75

2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity

0.25

2.05
1.95
94 8668

Fig. 10 - Tape Dimensions in mm for PLCC-2

MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction

94 8158

62.5
60.0

321
329

14.4 max.
18857

Fig. 13 - Dimensions of Reel-GS18

COVER TAPE REMOVAL FORCE

The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180 with regard to the feed direction.

> 160 mm

Tape leader

40 empty
compartments

min. 75 empty
compartments

Carrier leader

Carrier trailer

Fig. 11 - Beginning and End of Reel

The tape leader is at least 160 mm and is followed by a

carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.

Document Number: 81472

Rev. 1.3, 03-Nov-09

For technical questions, contact: [email protected]

www.vishay.com
311

Legal Disclaimer Notice

Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com
1