ST2300
N Channel Enhancement Mode MOSFET
4A
DESCRIPTION
The ST2300 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
z
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
20V/6.0A, RDS(ON) = 22m (Typ.)
@VGS = 10V
20V/5.0A, RDS(ON) = 26m
@VGS = 4.5V
20V/4.5A, RDS(ON) = 29m
@VGS = 2.5V
20V/4.0A, RDS(ON) = 35m
@VGS = 1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23-3L package design
42YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2300S23RG
SOT-23-3L
42YA
Process Code : A ~ Z ; a ~ z
ST2300S23RG ; S23 : SOT23-3L R : Tape Reel ; G : Pb Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
12
ID
4.0
3.0
IDM
13
IS
1.0
PD
1.25
0.8
TJ
150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RJA
140
Continuous Drain Current (TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS=0V,ID=250uA
20
VGS(th)
VDS=VGS,ID=250uA
0.4
IGSS
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V
1.0
VDS=0V,VGS=20V
100
nA
VDS=20V,VGS=0V
1
10
Zero Gate Voltage Drain
Current
IDSS
VDS=20V,VGS=0V
TJ=85
On-State Drain Current
ID(on)
VDS5V,VGS=4.5V
RDS(on)
VGS=10V,ID=6.0A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VGS=1.8V,ID=4.0A
0.022
0.026
0.029
0.035
Forward Tranconductance
gfs
VDS=15V,ID=5.0A
30
Diode Forward Voltage
VSD
IS=1.7A,VGS=0V
0.9
1.3
Total Gate Charge
Qg
10
13
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V
VGS=4.5V
ID5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=10V
VGS=0V
F=1MHz
600
120
100
Turn-On Time
td(on)
VDD=10V
RL=10
ID=1A
VGEN=4.5V
RG=6
15
25
40
60
45
65
30
40
Drain-source On-Resistance
uA
A
Dynamic
Turn-Off Time
tr
td(off)
tf
1.4
nC
2.1
pF
nS
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
TYPICAL CHARACTERICTICS (25 Unless noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
TYPICAL CHARACTERICTICS (25 Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
TYPICAL CHARACTERICTICS
6
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
ST2300
N Channel Enhancement Mode MOSFET
4A
SOT-23-3L PACKAGE OUTLINE
7
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2300 2005. V1
