DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
FEATURES
DESCRIPTION
Glass passivated
Rugged glass SOD64 package, using
a high temperature alloyed
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
7.5 to 270 V for 38 types
Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
Available in ammo-pack
Also available with preformed leads
for easy insertion.
2/3 page k(Datasheet)
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM205
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Ptot
PARAMETER
total power dissipation
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 25 C; lead length 10 mm; see Fig.2
6.00
Tamb = 45 C; see Fig.2;
PCB mounted (see Fig.6)
1.75
20
PZRM
repetitive peak reverse power
dissipation
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 s; square pulse;
Tj = 25 C prior to surge; see Fig.3
1000
PRSM
non-repetitive peak reverse
power dissipation
10/1000 s exponential pulse (see Fig.7);
Tj = 25 C prior to surge; see Fig.4
500
Tstg
storage temperature
65
+175
Tj
junction temperature
65
+175
1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
forward voltage
VF
MAX.
IF = 1 A; see Fig.5
1.2
UNIT
V
Per type when used as voltage regulator diodes
Tj = 25 C unless otherwise specified.
TYPE
No.
SUFFIX
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ (V) at IZ
rdif () at IZ
SZ (%/K) at IZ
(1)
MIN.
NOM.
MAX.
C7V5
7.0
7.5
7.9
0.7
C8V2
7.7
8.2
8.7
C9V1
8.5
9.1
9.6
C10
9.4
10
C11
10.4
C12
MAX.
IZ (mA)
REVERSE CURRENT at
REVERSE VOLTAGE
IR (A)
MAX.
1.5
0.00
0.07
175
1500
0.8
1.5
0.03
0.08
150
1200
6.2
0.9
2.0
0.03
0.08
150
40
6.8
10.6
1.0
2.0
0.05
0.09
125
20
7.5
11
11.6
1.1
2.5
0.05
0.10
125
15
8.2
11.4
12
12.7
1.1
2.5
0.05
0.10
100
10
9.1
C13
12.4
13
14.1
1.2
2.5
0.05
0.10
100
10
C15
13.8
15
15.6
1.2
2.5
0.05
0.10
75
11
C16
15.3
16
17.1
1.3
2.5
0.06
0.11
75
12
C18
16.8
18
19.1
1.3
2.5
0.06
0.11
65
13
C20
18.8
20
21.2
1.5
3.0
0.06
0.11
65
15
C22
20.8
22
23.3
1.6
3.5
0.06
0.11
50
16
C24
22.8
24
25.6
1.8
3.5
0.06
0.11
50
18
C27
25.1
27
28.9
2.5
0.06
0.11
50
20
C30
28
30
32
0.06
0.11
40
22
C33
31
33
35
10
0.06
0.11
40
24
C36
34
36
38
11
0.06
0.11
30
27
C39
37
39
41
14
0.06
0.11
30
30
C43
40
43
46
10
20
0.07
0.12
30
33
C47
44
47
50
12
25
0.07
0.12
25
36
C51
48
51
54
14
27
0.07
0.12
25
39
C56
52
56
60
18
35
0.07
0.12
20
43
C62
58
62
66
20
42
0.08
0.13
20
47
C68
64
68
72
22
44
0.08
0.13
20
51
C75
70
75
79
25
45
0.08
0.13
20
56
C82
77
82
87
30
65
0.08
0.13
15
62
C91
85
91
96
40
75
0.09
0.13
15
68
MAX.
at VR (V)
MIN.
1996 May 14
TYP.
TEST
CURRENT
5.6
Philips Semiconductors
Product specification
Voltage regulator diodes
TYPE
No.
SUFFIX
BZW03 series
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ (V) at IZ
rdif () at IZ
SZ (%/K) at IZ
(1)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
TEST
CURRENT
IZ (mA)
REVERSE CURRENT at
REVERSE VOLTAGE
IR (A)
MAX.
at VR (V)
C100
94
100
106
45
90
0.09
0.13
12
75
C110
104
110
116
65
125
0.09
0.13
12
82
C120
114
120
127
90
170
0.09
0.13
10
91
C130
124
130
141
100
190
0.09
0.13
10
100
C150
138
150
156
150
330
0.09
0.13
110
C160
153
160
171
180
350
0.09
0.13
120
C180
168
180
191
210
430
0.09
0.13
130
C200
188
200
212
250
500
0.09
0.13
150
C220
208
220
233
350
700
0.09
0.13
160
C240
228
240
256
450
900
0.09
0.13
180
C270
251
270
289
600
1200
0.09
0.13
200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZW03-C100.
1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
Per type when used as transient suppressor diodes
Tj = 25 C unless otherwise specified.
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
MIN.
BZW03-C7V5
BZW03-C8V2
BZW03-C9V1
MIN.
MAX.
CLAMPING
VOLTAGE
V(CL)R
(V)
MAX.
at IRSM
(A)
note 1
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (A)
MAX.
at VR
(V)
BZW03-C10
7.0
7.7
8.5
9.4
0.00
0.03
0.03
0.05
0.07
0.08
0.08
0.09
175
150
150
125
11.3
12.3
13.3
14.8
44.2
40.6
37.6
34.0
3000
2400
100
40
6.2
6.8
7.5
8.2
BZW03-C11
10.4
0.05
0.10
125
15.7
31.8
30
9.1
BZW03-C12
11.4
0.05
0.10
100
17.0
29.4
20
10
BZW03-C13
12.4
0.05
0.10
100
18.9
26.4
10
11
BZW03-C15
13.8
0.05
0.10
75
20.9
23.9
10
12
BZW03-C16
15.3
0.06
0.11
75
22.9
21.8
10
13
BZW03-C18
16.8
0.06
0.11
65
25.6
19.5
10
15
BZW03-C20
18.8
0.06
0.11
65
28.4
17.6
10
16
BZW03-C22
20.8
0.06
0.11
50
31.0
16.1
10
18
BZW03-C24
22.8
0.06
0.11
50
33.8
14.8
10
20
BZW03-C27
25.1
0.06
0.11
50
38.1
13.1
10
22
BZW03-C30
28
0.06
0.11
40
42.2
11.8
10
24
BZW03-C33
31
0.06
0.11
40
46.2
10.8
10
27
BZW03-C36
34
0.06
0.11
30
50.1
10.0
10
30
BZW03-C39
37
0.06
0.11
30
54.1
9.2
10
33
BZW03-C43
40
0.07
0.12
30
60.7
8.2
10
36
BZW03-C47
44
0.07
0.12
25
65.5
7.6
10
39
BZW03-C51
48
0.07
0.12
25
70.8
7.0
10
43
BZW03-C56
52
0.07
0.12
20
78.6
6.3
10
47
BZW03-C62
58
0.08
0.13
20
86.5
5.8
10
51
BZW03-C68
64
0.08
0.13
20
94.4
5.3
10
56
BZW03-C75
70
0.08
0.13
20
103.5
4.8
10
62
BZW03-C82
77
0.08
0.13
15
114.0
4.3
10
68
BZW03-C91
85
0.09
0.13
15
126
3.9
10
75
BZW03-C100
94
0.09
0.13
12
139
3.6
10
82
BZW03-C110
104
0.09
0.13
12
152
3.3
10
91
BZW03-C120
114
0.09
0.13
10
167
3.0
10
100
BZW03-C130
124
0.09
0.13
10
185
2.7
10
110
BZW03-C150
138
0.09
0.13
204
2.4
10
120
BZW03-C160
153
0.09
0.13
224
2.2
10
130
1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
TYPE
NUMBER
BZW03 series
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
MIN.
MIN.
MAX.
CLAMPING
VOLTAGE
V(CL)R
(V)
MAX.
at IRSM
(A)
note 1
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (A)
MAX.
at VR
(V)
BZW03-C180
168
0.09
0.13
249
2.0
10
150
BZW03-C200
188
0.09
0.13
276
1.8
10
160
BZW03-C220
BZW03-C240
BZW03-C270
BZW03-C300
BZW03-C330
BZW03-C360
BZW03-C390
BZW03-C430
BZW03-C470
BZW03-C510
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
5
5
5
5
5
5
5
5
305
336
380
419
459
498
537
603
655
707
1.6
1.5
1.3
1.2
1.1
1.0
0.93
0.83
0.76
0.71
10
10
10
10
10
10
10
10
10
10
180
200
220
240
270
300
330
360
390
430
Note
1. Non-repetitive peak reverse current in accordance with IEC 60-1, Section 8 (10/1000 s pulse); see Fig.7.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.6.
For more information please refer to the General Part of associated Handbook.
1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
GRAPHICAL DATA
MBH447
MBH448
104
handbook, halfpage
handbook, halfpage
Ptot
PZSM
(W)
(W)
103
102
10
102
0
100
200
T (C)
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; device mounted as
shown in Fig.6.
tp (ms)
10
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Maximum total power dissipation as a
function of temperature.
MBH449
104
handbook, halfpage
Tj = 25 C prior to surge.
Fig.3
Fig.2
101
MBH450
handbook, halfpage
IF
(A)
PRSM
(W)
103
102
102
101
t2 (ms)
Tj = 25 C prior to surge.
For definition of exponential pulse see Fig.7.
Fig.4
VF (V)
Tj = 25 C.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (exponential pulse).
1996 May 14
10
Fig.5
Forward current as a function of forward
voltage; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
IRSMhalfpage
handbook,
50
handbook, halfpage
(%)
25
100
90
7
50
50
10
t
t1
MGA200
t2
MGD521
In accordance with IEC 60-1, Section 8.
t1 = 10 s.
t2 = 1000 s.
Dimensions in mm.
Fig.7
Fig.6 Device mounted on a printed-circuit board.
1996 May 14
Non-repetitive peak reverse current
pulse definition.
Philips Semiconductors
Product specification
Voltage regulator diodes
,
PACKAGE OUTLINE
handbook, full pagewidth
4.5
max
28 min
5.0 max
Dimensions in mm.
The marking band indicates the cathode.
28 min
BZW03 series
a
1.35
max
MBC049
Fig.8 SOD64.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 14
