ECE 1001 : BASIC ELECTRONICS
Department of Electronics and Communication Engineering, MIT, Manipal
21
Part I : Analog Electronics
CHAPTER-1: DIODES AND APPLICATONS
Reference:
Robert L. Boylestad, Louis Nashelsky, Electronic Devices &
Circuit Theory, 11th Edition, PHI, 2012
Department of Electronics and Communication Engineering, MIT, Manipal
Module 1 : Diodes
Learning outcomes
At the end of this module, students will be able to:
Explain the operation of PN junction diode under different biasing
condition.
Draw the I-V characteristic of diode and differentiate between ideal and
practical diodes
Explain the concept of static and dynamic resistance of the diode.
Explain various breakdown phenomenon observed in diodes.
Describe the working of Zener diode and its I-V characteristic.
Explain the operation of diode as capacitor.
Department of Electronics and Communication Engineering, MIT, Manipal
Review
Basic of Semiconductors
Doping in Semiconductors
Department of Electronics and Communication Engineering, MIT, Manipal
Semiconductors
Common semiconducting materials
http://fourier.eng.hmc.edu/e84/le
ctures/ch4/node1.html
Crystal structure of silicon
http://www.austincc.edu/HongXiao/overvie
w/basic-semi/sld007.htm
Department of Electronics and Communication Engineering, MIT, Manipal
Doping in Semiconductors
Schematic of a silicon crystal lattice doped with impurities to
produce n-type and p-type semiconductor material.
[http://www.pveducation.org/pvcdrom/pn-junction/dopingl].
Department of Electronics and Communication Engineering, MIT, Manipal
Self test
1.Why silicon is preferred
semiconductor devices?
over
germanium
for
2.List different elemental and compound semiconductors.
Department of Electronics and Communication Engineering, MIT, Manipal
P-N Junction Diode
Anode
Cathode
Common practical diodes available in market
Department of Electronics and Communication Engineering, MIT, Manipal
P-N Junction Diode- conti
Used in numerous applications
Switch,
Rectifier,
Regulator,
Voltage multiplier,
Clipping,
Clamping, etc.
Department of Electronics and Communication Engineering, MIT, Manipal
P-N Junction Diode under biasing
P-N junction (a) in contact (b) formation of depletion region
[http://www.imagesco.com/articles/photovoltaic/photovoltaic-pg3.html].
Department of Electronics and Communication Engineering, MIT, Manipal
10
P-N Junction Diode under biasing condition
Unbias condition
Diode under zero bias conditions
Department of Electronics and Communication Engineering, MIT, Manipal
11
Forward bias
Positive of battery connected to p-type (anode)
Negative of battery connected to n-type (cathode)
Diode under forward biasing conditions
Department of Electronics and Communication Engineering, MIT, Manipal
12
Reverse bias
Positive of battery connected to n-type material (cathode)
Negative of battery connected to p-type material (anode)
Diode under reverse biasing conditions
Department of Electronics and Communication Engineering, MIT, Manipal
13
Self test
1. The arrow direction in the diode symbol indicates
a. Direction of electron flow.
b. Direction of hole flow (Direction of conventional current)
c. Opposite to the direction of hole flow
d. None of the above
2. When the diode is forward biased, it is equivalent to
a. An off switch
b. An On switch
c. A high resistance
d. None of the above
.
Department of Electronics and Communication Engineering, MIT, Manipal
14
I-V characteristic of practical diode
(mA)
Diode symbol
P
V is 0.6 ~ 0.7 Vfor Si
0.2 ~ 0.3 V for Ge
(A)
I-V characteristic of Practical diode
Department of Electronics and Communication Engineering, MIT, Manipal
15
Silicon vs. Germanium
I-V characteristic of silicon and germanium practical diode
http://www.technologyuk.net/physics/electrical_principles/the_diode.shtm
l
Department of Electronics and Communication Engineering, MIT, Manipal
16
Diode current equation
I D I o (eVD VT 1)
VD VT
I oe
Io
ID is diode current
Io is reverse saturation current
VD is voltage across diode
VT is thermal voltage = T / 11600
is a constant = 1 for Ge and 2 for Si
For positive values of VD (forward bias),
I D I o eVD VT
For large negative values of VD (reverse bias),
ID Io
Department of Electronics and Communication Engineering, MIT, Manipal
17
Effect of Temperature on the Reverse current
Reverse current doubles for every 10 degree rise in temperature.
I o 2 I o1 2
(T2 T1 ) /10
Q. A Silicon diode has a saturation current of 1pA at 200C. Determine (a)
Diode bias voltage when diode current is 3mA (b) Diode bias current when
the temperature changes to 1000C, for the same bias voltage.
A.
VD
VT
I D I0 e
1
VT
T
293
25.25 mV
11600 11600
I
VD VT ln 1 D 1.103V
I0
I 02 I 01 2
(T2 T1 )/10
10
12
(100 10 )
2 10
256 pA
1.103
12 ( 2 x 32.15 x10 3 1)
I D 256 x10 e
7.21 mA
Department of Electronics and Communication Engineering, MIT, Manipal
18
Effect of Temperature on the Reverse current
I (mA)
75oC
25oC
125oC
V (volts)
I (A)
Department of Electronics and Communication Engineering, MIT, Manipal
19
Diode resistances
Static or DC resistance:
ratio of diode voltage and
diode current
RD
VD
ID
AC resistance:
VD
rd
I D
VD VT
rd
I D
ID
Department of Electronics and Communication Engineering, MIT, Manipal
20
Diode Equivalent Circuit
Used during circuit analysis
Characteristic curve replaced by straight-line segments
1/RF
RR =
V
A
V
Forward bias
Reverse bias
RF
Department of Electronics and Communication Engineering, MIT, Manipal
21
Ideal diode : I-V characteristics
I-V characteristic of Ideal diode and ideal models
[http://conceptselectronics.com/diodes/diode-equivalent-models/].
Department of Electronics and Communication Engineering, MIT, Manipal
22
Diode Equivalent Circuit
As further approximation, we can neglect the slope of the
characteristic i.e., RF = 0
RF = 0
A
RR =
Forward bias
Reverse bias
V
V
Department of Electronics and Communication Engineering, MIT, Manipal
23
Diode Equivalent Circuit
As third approximation, even the cut-in voltage can be
neglected (Ideal diode)
A
RF = 0
A
Forward bias
Reverse bias
RR =
V = 0
Department of Electronics and Communication Engineering, MIT, Manipal
24
Self test
1. The break-point voltage of Si diode is
a. 0.2V b. 0.7V c. 0.8V d. 1.0V
2. Why would you use silicon diodes instead of
germanium diodes?
Department of Electronics and Communication Engineering, MIT, Manipal
25
Breakdown phenomenon in diodes
Two breakdown mechanisms:
Avalanche breakdown :
Occurs in Lightly doped diodes,
Occurs at high reverse Voltage.
Zener Breakdown:
Occurs in heavily doped diodes.
at lower reverse bias voltages.
Department of Electronics and Communication Engineering, MIT, Manipal
26
Avalanche Breakdown
Schematic of Avalanche phenomenon
http://shrdocs.com/presentations/12656/index.html
Department of Electronics and Communication Engineering, MIT, Manipal
27
Zener Breakdown
Schematic of Zener phenomenon
http://shrdocs.com/presentations/12656/index.html
Department of Electronics and Communication Engineering, MIT, Manipal
28
Zener Diode and its characteristics
P
Anode
Cathode
IZK or IZmin
IZM or IZMax
PZM or PZMax
PZM = VZ.IZM
I-V characteristics of Zener diode
Department of Electronics and Communication Engineering, MIT, Manipal
29
Equivalent circuit
Equivalent circuits of Zener diode
N
V
+
RR
RF
P
+
VZ
RZ
Forward
Reverse
Breakdown
Note: RZ is usually very small, can be neglected
Department of Electronics and Communication Engineering, MIT, Manipal
30
Diode as capacitor- Varactor diode
Ax
C
d
Department of Electronics and Communication Engineering, MIT, Manipal
31
Self test
1. Explain the principle of PIN diode.
2.What is the difference between PN diode and Schottky diode.
3.Which type of diode exhibits negative resistance and why?
4. Which of the following is not an essential element of a dc
power supply
a. Rectifier
b. Filter
c. Voltage regulator
d. Voltage amplifier
Department of Electronics and Communication Engineering, MIT, Manipal
32
Self test
5. What is true about the breakdown voltage in a Zener diode?
a. It decreases when current increases.
b. It destroys the diode.
c. It equals the current times the resistance.
d. It is approximately constant
6. Which of these is the best description of a Zener diode?
a. It is a rectifier diode.
b. It is a constant voltage device.
c. It is a constant current device.
d. It works in the forward region.
Department of Electronics and Communication Engineering, MIT, Manipal
33
Exercises
1. Calculate the dynamic forward and reverse resistance of a P - N
junction diode, when the applied voltage is 0.25V for Germanium
Diode. I0 = lA and T = 300 K.
(Ans:rf=1.734 ; rr=390 M)
2. A germanium diode has reverse saturation current of 0.19A.
Assuming =1, find the current in the diode when it is forward biased
with 0.3 V at 27oC.
(Ans: 19.5mA)
3. The forward current in a Si diode is 15 mA at 27oC. If reverse
saturation current is 0.24nA, what is the forward bias voltage?
(Ans: 0.93V)
4. A germanium diode carries a current of 10mA when it is forward
biased with 0.2V at 27oC. (a) Find reverse sat current. (b) Find the
bias
voltage
required
to
get
a
current
of
100mA.
(Ans: 4.42A, 0.259V)
Department of Electronics and Communication Engineering, MIT, Manipal
34
