TSAL6100

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Vishay Semiconductors

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength: p = 940 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: = 10
Low forward voltage

94 8389

Suitable for high pulse current operation

Good spectral matching with Si photodetectors
Material categorization: For definitions of compliance
please see [Link]/doc?99912

DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.

APPLICATIONS
Infrared remote control units with high power reqirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors

PRODUCT SUMMARY
COMPONENT

Ie (mW/sr)

(deg)

p (nm)

tr (ns)

170

10

940

15

TSAL6100

Note
Test conditions see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE
TSAL6100

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1

Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER

SYMBOL

VALUE

Reverse voltage

TEST CONDITION

VR

UNIT
V

Forward current

IF

100

mA

200

mA

Peak forward current

tp/T = 0.5, tp = 100 s

IFM

Surge forward current

tp = 100 s

IFSM

1.5

PV

160

mW

Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient

Rev. 1.8, 13-Mar-14

Tj

100

Tamb

-40 to +85

C
C

Tstg

-40 to +100

t 5 s, 2 mm from case

Tsd

260

J-STD-051, leads 7 mm soldered on PCB

RthJA

230

K/W

Document Number: 81009

1
For technical questions, contact: emittertechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000

TSAL6100
[Link]

Vishay Semiconductors
120

160

IF - Forward Current (mA)

PV - Power Dissipation (mW)

180

140
120
100

RthJA = 230 K/W

80
60
40

100
80

RthJA = 230 K/W

60
40
20

20
0

0
0

10

21211

20 30

40

50

60

70 80

90

100

10

21212

Tamb - Ambient Temperature (C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

20 30 40

50 60 70 80

90 100

Tamb - Ambient Temperature (C)

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

TYP.

MAX.

UNIT

IF = 100 mA, tp = 20 ms

VF

1.35

1.6

IF = 1 A, tp = 100 s

VF

2.2

Temperature coefficient of VF

IF = 1 mA

TKVF

-1.8

Reverse current

VR = 5 V

IR

VR = 0 V, f = 1 MHz, E = 0

Cj

IF = 100 mA, tp = 20 ms

Ie

80

170

650

1450

Forward voltage

Junction capacitance
Radiant intensity

MIN.

V
mV/K

10

400

mW/sr

40

pF

IF = 1 A, tp = 100 s

Ie

IF = 100 mA, tp = 20 ms

40

mW

IF = 20 mA

TKe

-0.6

%/K

10

deg

Peak wavelength

IF = 100 mA

940

nm

Spectral bandwidth

IF = 100 mA

30

nm

Temperature coefficient of p

IF = 100 mA

TKp

0.2

nm/K

Rise time

IF = 100 mA

tr

15

ns

Fall time

IF = 100 mA

tf

15

ns

Radiant power
Temperature coefficient of e
Angle of half intensity

Rev. 1.8, 13-Mar-14

mW/sr

Document Number: 81009

2
For technical questions, contact: emittertechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000

TSAL6100
[Link]

Vishay Semiconductors

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

1000

IFSM = 1 A (Single Pulse)

t p/T = 0.01
0.05

10 0

0.1
0.5
1.0
10 -1
-2
10

96 11987

tp = 100 s

Phie - Radiant Power (mW)

I F - Forward Current (A)

10 1

100

10

0.1

10 -1
10 0
10 1
t p - Pulse Duration (ms)

10 2

1000

Fig. 6 - Radiant Power vs. Forward Current

1.6

1000

IF - Forward Current (mA)

100

IF - Forward Current (mA)

Fig. 3 - Pulse Forward Current vs. Pulse Duration

1.2
Ie rel; e rel

100

IF = 20 mA
0.8

10

0.4

tp = 100 s
tp/T= 0.001

0
-10 0 10

1
0

VF - Forward Voltage (V)

21534

94 7993

Fig. 4 - Forward Current vs. Forward Voltage

50

100

140

T amb - Ambient Temperature (C)

Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature

10000

100

e rel - Relative Radiant Power (%)

Ie - Radiant Intensity (mW/sr)

10

tp = 100 s
1000

100

10

0.1
1

10

100

Fig. 5 - Radiant Intensity vs. Forward Current

Rev. 1.8, 13-Mar-14

80

21445

IF = 30 mA

70
60
50
40
30
20
10
0
840

1000

IF - Forward Current (mA)

90

880

920

960

1000

1040

- Wavelength (nm)

Fig. 8 - Relative Radiant Power vs. Wavelength

Document Number: 81009

3
For technical questions, contact: emittertechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000

TSAL6100
[Link]

Vishay Semiconductors
10

20

40
1.0
0.9

50

0.8

60
70

0.7

- Angular Displacement

Ie rel - Relative Radiant Intensity

30

80
0.6

0.4

0.2

15989

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

5.8 0.15

R2.49 (sphere)

(4.4)

35.2 0.55

< 0.7

8.7 0.3

7.7 0.15

Area not plane

5 0.15
1 min.

+ 0.2
0.6 - 0.1

+ 0.15
0.5 - 0.05

+ 0.15
0.5 - 0.05

technical drawings
according to DIN
specifications

2.54 nom.

6.544-5259.08-4
Issue: 3; 19.05.09
14436

Rev. 1.8, 13-Mar-14

Document Number: 81009

4
For technical questions, contact: emittertechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000

Legal Disclaimer Notice

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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

Document Number: 91000