BPW21R
Vishay Telefunken
Silicon PN Photodiode
Description
94 8394
BPW21R is a planar Silicon PN photodiode in a
hermetically sealed short TO5 case, especially designed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of illumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumination over the same range.
The device is equipped with a flat glass window with
built in color correction filter, giving an approximation
to the spectral response of the human eye.
Features
D Hermetically sealed TO5 case
D Flat glass window with builtin color correction filter for visible radiation
D
D
D
D
D
D
D
D
D
Cathode connected to case
Wide viewing angle = 50
Large radiant sensitive area (A=7.5 mm2)
Suitable for visible radiation
High sensitivity
Low dark current
High shunt resistance
Excellent linearity
For photodiode and photovoltaic cell operation
Applications
Sensor in exposure and color measuring purposes
Document Number 81519
Rev. 2, 20-May-99
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BPW21R
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Tamb
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
x 50 C
x5s
Value
10
300
125
55...+125
55...+125
260
250
Unit
V
mW
C
C
C
C
K/W
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
IF = 50 mA
IR = 20 mA, E = 0
VR = 5 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 5 V, f = 1 MHz, E = 0
VR = 10 mV
EA = 1 klx
EA = 1 klx
EA = 1 klx
EA = 1 klx
EA = 1 klx, VR = 5 V
VR = 5 V, EA = 102...105 lx
Dark Resistance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
VR = 0 V, RL = 1k W,
l = 660 nm
Fall Time
VR = 0 V, RL = 1k W,
l = 660 nm
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Symbol
VF
V(BR)
Iro
CD
CD
RD
Vo
TKVo
Ik
TKlk
Ira
S
Typ
1.0
Max
1.3
30
tr
2
1.2
400
38
450
2
9
0.05
9
9
50
565
420...675
3.1
tf
3.0
lp
l0.5
Min
10
280
4.5
4.5
Unit
V
V
nA
nF
pF
GW
mV
mV/K
mA
%/K
mA
nA/lx
deg
nm
nm
ms
ms
Document Number 81519
Rev. 2, 20-May-99
BPW21R
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1400
CD Diode Capacitance ( pF )
I ro Reverse Dark Current ( nA )
104
103
102
VR=5V
101
1200
800
600
400
200
100
0
20
40
60
80
120
100
0.1
Tamb Ambient Temperature ( C )
94 8468
1.2
1.1
1.0
0.9
0.8
94 8738
20
40
60
80
100
1.0
0.8
0.6
0.4
0.2
Vl Eye
0
350
120
Tamb Ambient Temperature ( C )
450
550
Figure 5. Relative Spectral Sensitivity vs. Wavelength
0
S rel Relative Sensitivity
Ik Short Circuit Current ( m A )
102
101
100
101
102
750
650
l Wavelength ( nm )
94 8477
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
100
10
Figure 4. Diode Capacitance vs. Reverse Voltage
S ( l ) rel Relative Spectral Sensitivity
1.3
VR Reverse Voltage ( V )
94 8473
Figure 1. Reverse Dark Current vs. Ambient Temperature
I ra rel Relative Reverse Light Current
E=0
f=1MHz
1000
103
10
20
30
40
1.0
0.9
50
0.8
60
70
0.7
80
104
102
94 8476
101
100
101
102
103
104
EA Illuminance ( lx )
Figure 3. Short Circuit Current vs. Illuminance
Document Number 81519
Rev. 2, 20-May-99
0.6
0.4
0.2
0.2
0.4
0.6
94 8475
Figure 6. Relative Radiant Sensitivity vs.
Angular Displacement
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BPW21R
Vishay Telefunken
Dimensions in mm
96 12181
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Document Number 81519
Rev. 2, 20-May-99
BPW21R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81519
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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