BC546/547/548/549/550
BC546/547/548/549/550
Switching and Applications
High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560
TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 30 65 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW C C
VCEO
Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550
VEBO IC PC TJ TSTG
Electrical Characteristics Ta=25C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200A f=1KHz, RG=2K VCE=5V, IC=200A RG=2K, f=30~15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA
hFE Classification
Classification hFE
2002 Fairchild Semiconductor Corporation
A 110 ~ 220
B 200 ~ 450
C 420 ~ 800
Rev. A2, August 2002
BC546/547/548/549/550
Typical Characteristics
100
100
80
IB = 350A IB = 300A IB = 250A IB = 200A
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = 400A
VCE = 5V
10
60
40
IB = 150A IB = 100A
20
IB = 50A
0 0 2 4 6 8 10 12 14 16 18 20
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000
VCE = 5V
1000
IC = 10 IB
hFE, DC CURRENT GAIN
1000
V BE(sat)
100
100
10
V CE(sat)
1 1 10 100 1000
10 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
100
1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT
Cob[pF], CAPACITANCE
f=1MHz IE = 0
10
VCE = 5V
100
10
0.1 1 10 100 1000
1 0.1
10
100
V CB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC546/547/548/549/550
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 0.05
+0.10
3.86MAX
1.02 0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
2002 Fairchild Semiconductor Corporation
Rev. I1
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