C
Kristin Ackerson, Virginia Tech EE Spring 2002
Table of Contents
The Bipolar Junction Transistor_______________________________slide 3 BJT Relationships Equations________________________________slide 4 DC and DC _____________________________________________slides 5 BJT Example_______________________________________________slide 6 BJT Transconductance Curve_________________________________slide 7 Modes of Operation_________________________________________slide 8 Three Types of BJT Biasing__________________________________slide 9 Common Base______________________slide 10-11
Common Emitter_____________________slide 12 Common Collector___________________slide 13 Eber-Moll Model__________________________________________slides 14-15 Small Signal BJT Equivalent Circuit__________________________slides 16 The Early Effect___________________________________________slide 17 Early Effect Example_______________________________________slide 18 Breakdown Voltage________________________________________slide 19 Sources__________________________________________________slide 20
Kristin Ackerson, Virginia Tech EE Spring 2002
The BJT Bipolar Junction Transistor
Note: It will be very helpful to go through the Analog Electronics Diodes Tutorial to get information on doping, n-type and p-type materials.
The Two Types of BJT Transistors: npn pnp
E n p n C B B
Schematic Symbol
p C
Cross Section
Cross Section
B B
Schematic Symbol
Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015
Kristin Ackerson, Virginia Tech EE Spring 2002
BJT Relationships - Equations
IE E VBE + B IB + VCE + IC C VBC E + VEB B IE + VEC IC C + IB VCB
npn
IE = IB + IC
pnp
IE = IB + IC
VCE = -VBC + VBE
VEC = VEB - VCB
Note: The equations seen above are for the transistor, not the circuit.
Kristin Ackerson, Virginia Tech EE Spring 2002
DC and DC
= Common-emitter current gain = Common-base current gain = IC = IC
IB
IE
The relationships between the two parameters are:
+1
1-
Note: and are sometimes referred to as dc and dc because the relationships being dealt with in the BJT are DC.
Kristin Ackerson, Virginia Tech EE Spring 2002
BJT Example
Using Common-Base NPN Circuit Configuration C Given: IB = 50 A , IC = 1 mA
VCB B VBE
+ _ + _
IC IB
Find:
IE , , and
Solution: IE E IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA
= IC / IB = 1 mA / 0.05 mA = 20
= IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 = 0.95238 +1 21
Kristin Ackerson, Virginia Tech EE Spring 2002
BJT Transconductance Curve
Typical NPN Transistor 1
Collector Current: IC
8 mA
IC = IES eVBE/VT
Transconductance: (slope of the curve)
6 mA
gm = IC / VBE
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K)
4 mA
2 mA
= the emission coefficient and is usually ~1
0.7 V
VBE
Kristin Ackerson, Virginia Tech EE Spring 2002
Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat
Saturation: Barrier potential of the junctions cancel each other out
causing a virtual short
Cutoff:
Current reduced to zero Ideal transistor behaves like an open switch
* Note: There is also a mode of operation called inverse active, but it is rarely used.
Kristin Ackerson, Virginia Tech EE Spring 2002
Three Types of BJT Biasing
Biasing the transistor refers to applying voltage to get the transistor to achieve certain operating conditions.
Common-Base Biasing (CB) :
input
= VEB & IE
output = VCB & IC Common-Emitter Biasing (CE): input = VBE & IB
output = VCE & IC Common-Collector Biasing (CC): input = VBC & IB
output = VEC & IE
Kristin Ackerson, Virginia Tech EE Spring 2002
Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC Saturation Region Active Region IE
Cutoff IE = 0
VCB
Kristin Ackerson, Virginia Tech EE Spring 2002
Common-Base
Circuit Diagram: NPN Transistor C IC
VCE
IE
VCB The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor. Region of Operation IC VCE VBE IB
+ _
VBE
VCB
VCB
VBE
C-B Bias E-B Bias
Active Saturation
Cutoff
IB Max
~0
=VBE+VCE ~0.7V ~0V
0V
Rev. Fwd.
~0.7V -0.7V<VCE<0 Fwd. Fwd.
0V Rev. None /Rev.
=VBE+VCE 0V
Kristin Ackerson, Virginia Tech EE Spring 2002
+ _
Common-Emitter
Circuit Diagram VCE IC
Collector-Current Curves IC
VC
C
+ _
IB
Active Region
Region of Description Operation Active Small base current controls a large collector current
IB
VCE
Saturation Region Cutoff Region IB = 0
Saturation VCE(sat) ~ 0.2V, VCE increases with IC
Cutoff Achieved by reducing IB to 0, Ideally, IC will also equal 0.
Kristin Ackerson, Virginia Tech EE Spring 2002
Common-Collector
Emitter-Current Curves The CommonCollector biasing circuit is basically equivalent to the common-emitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE
IE
Active Region
IB
VCE
Saturation Region Cutoff Region IB = 0
Kristin Ackerson, Virginia Tech EE Spring 2002
Eber-Moll BJT Model
The Eber-Moll Model for BJTs is fairly complex, but it is valid in all regions of BJT operation. The circuit diagram below shows all the components of the Eber-Moll Model:
IE
IC
RIC
RIE
IF IB B
IR
Kristin Ackerson, Virginia Tech EE Spring 2002
Eber-Moll BJT Model
R = Common-base current gain (in forward active mode) F = Common-base current gain (in inverse active mode) IES = Reverse-Saturation Current of B-E Junction ICS = Reverse-Saturation Current of B-C Junction
IC = FIF IR IE = IF - RIR
IB = IE - IC
IF = IES [exp(qVBE/kT) 1]
IR = IC [exp(qVBC/kT) 1]
If IES & ICS are not given, they can be determined using various BJT parameters.
Kristin Ackerson, Virginia Tech EE Spring 2002
Small Signal BJT Equivalent Circuit
The small-signal model can be used when the BJT is in the active region. The small-signal active-region model for a CB circuit is shown below:
iB B r iB iC
r = ( + 1) * VT IE
@ = 1 and T = 25C
iE
E
Recall:
r = ( + 1) * 0.026 IE
= IC / IB
Kristin Ackerson, Virginia Tech EE Spring 2002
The Early Effect (Early Voltage)
Note: Common-Emitter Configuration
IC
IB
-VA Green = Ideal IC Orange = Actual IC (IC) IC = IC VCE + 1 VA
VCE
Kristin Ackerson, Virginia Tech EE Spring 2002
Early Effect Example
Given: The common-emitter circuit below with IB = 25A, VCC = 15V, = 100 and VA = 80. Find: a) The ideal collector current
b) The actual collector current
Circuit Diagram IC VCE a) VCC
+ _
= 100 = IC/IB IC = 100 * IB = 100 * (25x10-6 A) IC = 2.5 mA
IB
b)
IC = IC
VCE + 1 VA
= 2.5x10-3
15 + 1 80
= 2.96 mA
IC = 2.96 mA
Kristin Ackerson, Virginia Tech EE Spring 2002
Breakdown Voltage
The maximum voltage that the BJT can withstand.
BVCEO =
The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts. The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts. Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
Kristin Ackerson, Virginia Tech EE Spring 2002
BVCBO =
Sources
Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New Jersey: 2001. (pp 84-153)
1
Figure 3.7, Transconductance curve for a typical npn transistor, pg 90.
Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and Simulation. Plenum Press, New York: 1998. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles. McGraw-Hill, Boston: 1997. (pp 351-409)
Web Sites
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Kristin Ackerson, Virginia Tech EE Spring 2002
