SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V
ID (A)
45a 45a
TO-263
DRAIN connected to TAB
D S
Top View S SUB45N03-13L N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "10 45a 34a 100 45 100 88c 3.75 55 to 175
Unit
V
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71739 S-05011Rev. F, 29-Oct-01 www.vishay.com PCB Mountd
Symbol
RthJA RthJC
Limit
40 1.7
Unit
_C/W _
SUB45N03-13L
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A Drain-Source On-State Resistancea VGS = 10 V, ID = 45 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 45 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 45 0.01 0.0155 0.02 0.0145 0.013 0.02 0.026 0.02 S W 30 1 3 "100 1 50 150 A m mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.33 W ID ] 45 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 45 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2730 450 220 45 8.5 8 11 9 38 11 20 20 70 20 ns 70 nC pF
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms m IF = 45 A, VGS = 0 V 1 35 1.7 0.03 45 A 100 1.3 70 V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature.
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Document Number: 71739 S-05011Rev. F, 29-Oct-01
SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120 VGS = 10 thru 6 V 100 5V 80 90 I D Drain Current (A) I D Drain Current (A) 60
Transfer Characteristics
60 4V
40 TC = 125_C 20 25_C 0 55_C 3 4 5
30 3V 0 0 2 4 6 8 10
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
Transconductance
80 TC = 55_C 60 25_C r DS(on) On-Resistance ( W ) 0.04 0.05
On-Resistance vs. Drain Current
g fs Transconductance (S)
125_C 40
0.03
0.02 VGS = 4.5 V VGS = 10 V 0.01
20
0 0 10 20 30 40 50 60
0.00 0 20 40 ID Drain Current (A) 60 80
VGS Gate-to-Source Voltage (V)
Capacitance
4000 10
Gate Charge
Ciss C Capacitance (pF) 3000
V GS Gate-to-Source Voltage (V)
VGS = 15 V ID = 45 A
2000
1000 Crss 0 0 6 12
Coss
0 18 24 30 0 10 20 30 40 50
VDS Drain-to-Source Voltage (V) Document Number: 71739 S-05011Rev. F, 29-Oct-01
Qg Total Gate Charge (nC) www.vishay.com
SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 45 A r DS(on) On-Resistance (W) (Normalized) I S Source Current (A) TJ = 150_C TJ = 25_C 10 100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5 50
1 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ Junction Temperature (_C)
VSD Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
60 200 100 10 ms 100 ms
Safe Operating Area
50 I D Drain Current (A) I D Drain Current (A)
Limited by rDS(on)
40
30
10
1 ms
20
10
TC = 25_C Single Pulse
10 ms 100 ms dc
0 0 25 50 75 100 125 150 175
1 0.1 1 10 100
TC Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
VDS Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 105 104 103 102 101 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71739 S-05011Rev. F, 29-Oct-01
