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2sd 2562

This datasheet provides specifications for the 2SD2562 Darlington transistor. It includes: 1) Electrical characteristics such as gain, voltage and current ratings. 2) Absolute maximum ratings for voltage, current, power and temperature. 3) External dimensions and pinout diagram. 4) Typical switching, thermal and frequency characteristics graphs.

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Richard Ramms
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73 views2 pages

2sd 2562

This datasheet provides specifications for the 2SD2562 Darlington transistor. It includes: 1) Electrical characteristics such as gain, voltage and current ratings. 2) Absolute maximum ratings for voltage, current, power and temperature. 3) External dimensions and pinout diagram. 4) Typical switching, thermal and frequency characteristics graphs.

Uploaded by

Richard Ramms
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Equivalent circuit

Darlington

2SD2562
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=2A VCB=10V, f=1MHz 2SD2562 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF
16.2

(7 0 )

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2562 150 150 5 15 1 85(Tc=25C) 150 55 to +150 Unit V V V A A W C C

Application : Audio, Series Regulator and General Purpose


(Ta=25C) Unit

External Dimensions FM100(TO3PF)


0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6

A
V
9.50.2

A
23.00.3

a b

1.75 2.15 1.05 5.450.1 1.5 4.4


+0.2 -0.1

3.3

0.8

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

sTypical Switching Characteristics (Common Emitter)


VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 10 IB2 (mA) 10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ

5.450.1 1.5

0.65 +0.2 -0.1

3.35

Weight : Approx 6.5g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
15

V CE ( sa t ) I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V) 3

I C V BE Temperature Characteristics (Typical)


15 (V CE =4V)

10mA
50mA

3mA
2m A
1.5 mA

1. 0m A

Collector Current I C (A)

10
0.5mA

Collector Current I C (A)

0. 8m A

10

emp

mp)

I C =.15A I C =.10A 1 I C =.5A

e Te

eT

Cas

C (

I B =0.3mA

25C

0 0.2

0.5

10

50

100 200

1 Base-Emittor Voltage V B E (V)

30C

125

(Cas

(Cas

e Te

mp)

3.0

2.2

Collector-Emitter Voltage V C E (V)

Base Current I B (mA)

(V C E =4V) 50000 DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E 50000


12 5C

(V C E =4V)

j- a ( C/ W)

h FE I C Characteristics (Typical)

h FE I C Temperature Characteristics (Typical)

j-a t Characteristics
3.0

Typ
10000 5000

Transient Thermal Resistance

10000 5000

1.0

25

0.5

30

1000 500 02 0.5 1 Collector Current I C (A) 5 10 15

1000 500 02 0.5 1 Collector Current I C (A) 5 10 15

0.1

10

100 Time t(ms)

1000 2000

f T I E Characteristics (Typical)
(V C E =12V) 80

Safe Operating Area (Single Pulse)


100

P c T a Derating

Maxim um Power Dissipatio n P C (W)

Cu t-off Fre quen cy f T (M H Z )

80

60

W ith In

60

fin ite

40

he at si nk

40

20

20 Without Heatsink 0 25 50 75 100 125 150

0 0.02 0.05 01

0.5

10

3.5 0

Emitter Current I E (A)

Ambient Temperature Ta(C)

160

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

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