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Nmos Over Pmos

N-channel transistors have lower on-resistance than equivalent p-channel transistors due to higher electron mobility, allowing n-channel devices to be half the size for the same impedance or allowing for greater complexity without increasing silicon area, and n-channel circuits are also faster than p-channel circuits due to smaller junction areas and capacitances.

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Faraz A Khan
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886 views1 page

Nmos Over Pmos

N-channel transistors have lower on-resistance than equivalent p-channel transistors due to higher electron mobility, allowing n-channel devices to be half the size for the same impedance or allowing for greater complexity without increasing silicon area, and n-channel circuits are also faster than p-channel circuits due to smaller junction areas and capacitances.

Uploaded by

Faraz A Khan
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as TXT, PDF, TXT or read online on Scribd

Since electron mobility is twice (say) that of hole mobility, an n-channel devic e will have one-half the on-resistance

or impedance of an equivalent p-channel d evice with the same geometry and under the same operating conditions. Thus n-cha nnel transistors need only halt the size of p-channel devices to achieve the sam e impedance. Therefore, n-channel ICs can be smaller for the same complexity or, even more important, they can be more complex with no increase in silicon area. NMOS circuits offer a speed advantage over PMOS due to smaller junction areas. S ince the operating speed of an MOS IC is largely limited by internal RC time con stants and capacitance of diode is directly proportional to its size, an n-chann el junction can have smaller capacitance. This, in turn, improves its speed.

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