NMOS PMOS

D D S S

G B G B G B G B

S S D D
Threshold voltage Threshold voltage
V T = V T 0 + γ ( φ B + V SB – φ B ) V T = V T 0 –γ ( φ B + V BS – φB )

Saturation region (VDS>VGS-VT) Saturation region (VSD>VSG-|VT|)

µC ox W µC ox W
I D = ------------ ----- ( V GS – V T ) 2 ( 1 + λV DS ) I D = – ------------ ----- ( V – V T ) 2 ( 1 + λV SD )
2 L 2 L SG

∂I D W 2I D W ∂I D W 2 ID W
g m = ------------- ≈ µC ox ----- ( V GS – V T ) ≈ ----------------------- ≈ 2µC ox ----- I D g m = ------------- ≈ µC ox ----- ( V SG – V T ) ≈ -------------------------- ≈ 2µC ox ----- I D
∂V GS L V GS – V T L ∂V GS L V SG – V T L

∂I D µC ox W λ′ ∂I D µC ox W λ′
- = ------------ ----- ( V GS – V T ) 2 λ ≈ λI D = ----- I D
g d = ------------ - = ------------ ----- ( V SG – V T ) 2 λ ≈ λ I D = ----- I D
g d = ------------
∂V DS 2 L L ∂V DS 2 L L

∂I D γ ∂I D γ
g mb = ------------ = g m ------------------------------ g mb = ------------ = g m ---------------------------------
∂V BS 2 φ B + V SB ∂V BS 2 φ B + V BS

Linear region (VDS<VGS-VT) Linear region (VSD<VSG-|VT|)

2 2
W V DS W V SD
I D = µC ox -----  ( V GS – V T )V DS – ---------
- ( 1 + λV DS ) I D = – µ C ox -----  ( V SG – V T )V SD – ---------
- ( 1 + λV SD )
L 2  L 2 

∂I D W ∂I D W
g m = ------------- ≈ µC ox ----- V DS g m = ------------- ≈ µC ox ----- V SD
∂V GS L ∂V GS L

∂I D W ∂I D W
g d = ------------- ≈ µC ox ----- ( V GS – V T – V DS ) g d = ------------- ≈ µC ox ----- ( V SG – V T – V SD )
∂V DS L ∂V DS L

∂I D γ ∂I D γ
g mb = ------------ = g m ------------------------------ g mb = ------------ = g m ---------------------------------
∂V BS 2 φ B + V SB ∂V BS 2 φ B + V BS